PD - 91269I
IRF7507
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
S1
G1
S2
G2
N-C HANNE L M O S F E T
1
8
D1
D1
D2
D2
N-Ch
P-Ch
2
7
3
6
V
DSS
20V
-20V
4
5
P -C HANNE L M O S F E T
T op V ie w
R
DS(on)
0.135Ω 0.27Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
M icro 8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
V
GSM
dv/dt
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
N-Channel
20
2.4
1.9
19
1.25
0.8
10
± 12
16
5.0
-5.0
-55 to + 150
240 (1.6mm from case)
Max.
P-Channel
-20
-1.7
-1.4
-14
Units
V
A
W
W
mW/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
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1
12/1/98
IRF7507
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
N-Ch 20
—
—
V
GS
= 0V, I
D
= 250µA
V
P-Ch -20 —
—
V
GS
= 0V, I
D
= -250µA
N-Ch — 0.041 —
Reference to 25°C, I
D
= 1mA
V/°C
P-Ch — -0.012 —
Reference to 25°C, I
D
= -1mA
— 0.085 0.14
V
GS
= 4.5V, I
D
= 1.7A
N-Ch
— 0.120 0.20
V
GS
= 2.7V, I
D
= 0.85A
Ω
— 0.17 0.27
V
GS
= -4.5V, I
D
=-1.2A
P-Ch
— 0.28 0.40
V
GS
= -2.7V, I
D
=-0.6A
N-Ch 0.7 —
—
V
DS
= V
GS
, I
D
= 250µA
V
P-Ch -0.7 —
—
V
DS
= V
GS
, I
D
= -250µA
N-Ch 2.6 —
—
V
DS
= 10V, I
D
= 0.85A
S
P-Ch 1.3 —
—
V
DS
= -10V, I
D
= -0.6A
N-Ch —
— 1.0
V
DS
= 16 V, V
GS
= 0V
P-Ch —
— -1.0
V
DS
= -16V, V
GS
= 0V
µA
N-Ch —
—
25
V
DS
= 16 V, V
GS
= 0V, T
J
= 125°C
P-Ch —
— -25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
N-P ––
— ±100
V
GS
= ± 12V
N-Ch –– 5.3 8.0
N-Channel
P-Ch — 5.4 8.2
I
D
= 1.7A, V
DS
= 16V, V
GS
= 4.5V
N-Ch –– 0.84 1.3
nC
P-Ch — 0.96 1.4
P-Channel
N-Ch –– 2.2 3.3
I
D
= -1.2A, V
DS
= -16V, V
GS
= -4.5V
P-Ch — 2.4 3.6
N-Ch — 5.7 —
N-Channel
P-Ch — 9.1 —
V
DD
= 10V, I
D
= 1.7A, R
G
= 6.0Ω,
N-Ch —
24
—
R
D
= 5.7Ω
P-Ch —
35
—
ns
N-Ch —
15
—
P-Channel
P-Ch —
38
—
V
DD
= -10V, I
D
= -1.2A, R
G
= 6.0Ω,
N-Ch —
16
—
R
D
= 8.3Ω
P-Ch —
43
—
N-Ch — 260 —
N-Channel
P-Ch — 240 —
V
GS
= 0V, V
DS
= 15V, ƒ = 1.0MHz
N-Ch — 130 —
pF
P-Ch — 130 —
P-Channel
N-Ch —
61
—
V
GS
= 0V, V
DS
= -15V, ƒ = 1.0MHz
P-Ch —
64
—
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 1.25
—
— -1.25 A
—
—
19
—
— -14
—
— 1.2
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
V
—
— -1.2
T
J
= 25°C, I
S
= -1.2A, V
GS
= 0V
—
39
59
N-Channel
ns
—
52
78
T
J
= 25°C, I
F
= 1.7A, di/dt = 100A/µs
—
37
56
P-Channel
nC
T
J
= 25°C, I
F
= -1.2A, di/dt = -100A/µs
—
63
95
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
N-Channel I
SD
≤
1.7A, di/dt
≤
66A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-1.2A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
2
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N - Channel
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
IRF7507
100
I , D rain-to-S ourc e C urrent (A )
D
10
I , D rain-to-S ource C urrent (A )
D
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
1
1
1.5V
0.1
0.1
0.01
0.1
1
1.5V
20µ s P U LS E W ID TH
T
J
= 25°C
A
10
0.01
0.1
1
20µ s P U LS E W ID TH
T
J
= 150°C
A
10
V D S , D rain-to-S ourc e V oltage (V )
V D S , D rain-to-S ource Voltage (V )
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
100
I
D
, D rain-to-S ource C urrent (A )
I
S D
, R everse D rain C urrent (A )
10
10
T
J
= 1 5 0 °C
T
J
= 2 5 °C
T
J
= 150°C
1
1
T
J
= 25°C
0.1
1.5
2.0
2.5
V
DS
= 10V
2 0 µ s P U L S E W ID T H
3.0
3.5
4.0
A
0.1
0.4
V
G S
= 0V
0.6
0.8
1.0
1.2
1.4
1.6
A
1.8
V
G S
, G a te -to -S o u rce V o lta g e (V )
V
S D
, Sourc e-to-D rain V oltage (V )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
0.8
2.0
R
D S(on)
, Drain-to-Source On Resistance
(N orm alized)
R
DS(on)
, Drain-to-Source On Resistance
I
D
= 1.7A
1.5
0.6
1.0
0.4
V
0.2
GS
= 2.5V
0.5
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 4.5 V
100 120 140 160
A
0.0
0
V
G S
= 5.0V
2
4
6
A
T
J
, Junction Tem perature (°C )
I
D
, D ra in C urren t (A )
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
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3
IRF7507
(Ω
N - Channel
0.13
100
R
D S (o n )
, D ra in -to -S o u rc e O n R e s is ta n c e
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
0.11
10us
I
D
, Drain Current (A)
10
100us
0.09
I
D
= 2.4 A
1ms
1
10ms
0.07
0.05
2
3
4
5
6
7
8
A
0.1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
V
G S
, G ate-to-S ource V oltage (V )
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
500
Fig 8.
Maximum Safe Operating Area
-V
G S
, G ate-to-S ourc e V oltage (V )
400
V
GS
=
C
is s
=
C
rs s
=
C
o ss
=
0V ,
f = 1M H z
C
gs
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
gd
10
I
D
= 1.7A
V
D S
= 16V
8
C , C a p a c ita n c e ( p F )
C
iss
300
6
C
oss
200
4
C
rss
100
2
0
1
10
100
A
0
0
2
4
FO R TE S T C IR C U IT
S E E F IG U R E 9
6
8
10
A
V
D S
, D rain-to-S ource V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
4
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IRF7507
P - Channel
100
VGS
TOP
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
100
-I D , D rain-to-S ourc e C urrent (A )
-ID , D rain-to-S ourc e C urrent (A )
10
10
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
1
1
0.1
0.1
-1.5V
-1.5V
0.01
0.1
1
20µs P U LS E W ID TH
T
J
= 25°C
A
10
0.01
0.1
1
20µ s P U LS E W ID TH
T
J
= 150°C
10
A
-V D S , D rain-to-S ource Voltage (V )
-VD S , D rain-to-Source V oltage (V)
Fig 11.
Typical Output Characteristics
10
Fig 12.
Typical Output Characteristics
10
-I
D
, D rain-to-S ource C urrent (A )
T
J
= 1 5 0 °C
1
-I
S D
, R everse D rain C urrent (A )
T
J
= 2 5 °C
T
J
= 1 50 °C
1
T
J
= 2 5°C
0.1
0.1
0.01
1.5
2.0
2.5
3.0
V
D S
= -1 0 V
2 0 µ s P U L S E W ID T H
3.5
4.0
4.5
5.0
A
0.01
0.4
0.6
0.8
1.0
V
G S
= 0V
A
1.2
-V
G S
, G a te -to -S o u rce V o lta g e (V )
-V
S D
, S ourc e-to-D rain V oltage (V )
Fig 13.
Typical Transfer Characteristics
2.0
Fig 14.
Typical Source-Drain Diode
Forward Voltage
1.0
R
D S (on )
, D rain-to-S ource O n R esistance
(N orm alized)
I
D
= -1.2A
R
DS (on)
, Drain-to-Source On Resistance
0.8
1.5
0.6
1.0
VGS = -2.5V
0.4
0.5
VGS = -5.0V
0.2
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= -4.5V
100 120 140 160
A
0.0
0.0
0.5
1.0
1.5
2.0
T
J
, Junction Tem perature (°C )
-I
D
, Drain Current (A)
Fig 15.
Normalized On-Resistance
Vs. Temperature
Fig 16.
Typical On-Resistance Vs. Drain
Current
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