PD - 9.1268F
IRF7506
HEXFET
®
Power MOSFET
Generation V Technology
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Ultra Low On-Resistance
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Dual P-Channel MOSFET
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Very Small SOIC Package
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Low Profile (<1.1mm)
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Available in Tape & Reel
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Fast Switching
Description
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S1
G1
S2
G2
1
8
D1
D1
D2
D2
2
7
V
DSS
= -30V
3
6
4
5
R
DS(on)
= 0.27Ω
T o p V iew
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
MICRO8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-1.7
-1.4
-9.6
1.25
10
± 20
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
100
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
IRF7506
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-30
–––
–––
–––
-1.0
0.92
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.039
–––
–––
–––
–––
–––
–––
–––
–––
7.5
1.3
2.5
9.7
12
19
9.3
180
87
42
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.27
V
GS
= -10V, I
D
= -1.2A
Ω
0.45
V
GS
= -4.5V, I
D
= -0.60A
–––
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -0.60A
-1.0
V
DS
= -24V, V
GS
= 0V
µA
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
11
I
D
= -1.2A
1.9
nC
V
DS
= -24V
3.7
V
GS
= -10V, See Fig. 6 and 9
–––
V
DD
= -15V
–––
I
D
= -1.2A
ns
–––
R
G
= 6.2Ω
–––
R
D
= 12Ω, See Fig. 10
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
30
37
-1.25
A
-9.6
-1.2
45
55
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= -1.2A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.2A
di/dt = -100A/µs
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
SD
≤
-1.2A, di/dt
≤
-140A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300µs – duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤
10sec.
IRF7506
10
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
TOP
10
-I D , D ra in -to -S o u rc e C u rre n t (A )
1
-I D , D ra in -to -S o u rc e C u rre n t (A )
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
TOP
1
-3.0V
-3.0 V
0.1
0.1
1
20 µs P U LSE W IDTH
T
J
= 25 °C
A
10
0.1
0.1
1
20 µs P U LSE W IDTH
T
J
= 15 0°C
A
10
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.0
T
J
= 2 5 °C
T
J
= 1 5 0 °C
R
D S (o n )
, D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I
D
= -1.2A
-I
D
, D rain -to- S our ce C urr ent ( A )
1.5
1
1.0
0.5
0.1
3.0
4.0
5.0
V
DS
= -1 0 V
2 0 µ s P U L S E W ID T H
6.0
7.0
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= -10 V
100 120 140 160
A
-V
G S
, Ga te-to-S o urce V oltage (V )
T
J
, Junction T emperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF7506
400
-V
G S
, G a te -to -S o u rce V o lta g e (V )
V
GS
C
is s
C
rs s
C
os s
=
=
=
=
0V ,
f = 1MH z
C
gs
+ C
g d
, C
ds
SH OR TED
C
gd
C
ds
+ C
gd
20
I
D
= -1.2 A
V
DS
= -24 V
V
DS
= -15 V
16
C , C a p a c ita n c e (p F )
300
C
iss
C
os s
200
12
8
100
C
rs s
4
0
1
10
100
A
0
0
2
4
6
FO R TEST C IR C U IT
SEE F IGU R E 9
8
10
12
A
-V
D S
, Drain-to-Source V oltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
-I
S D
, R e ve rs e D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R
D S(o n)
T
J
= 1 50 °C
T
J
= 25 °C
-I
D
, D ra in C u rre n t (A )
10
10µ s
1
10 0µs
1
1 ms
0.1
0.4
0.6
0.8
1.0
V
G S
= 0 V
1.2
A
0.1
1
T
A
= 25 °C
T
J
= 15 0°C
S ing le Pulse
10
10m s
A
100
1.4
-V
S D
, S ource-to-Drain V oltage (V )
-V
D S
, D rain-to-S ource Voltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF7506
V
DS
R
D
Q
G
-10V
Q
GS
V
G
Q
GD
R
G
V
GS
D.U.T.
+
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Charge
Fig 9a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
50KΩ
12V
.2µF
.3µF
V
GS
10%
+
D.U.T.
-
V
DS
V
GS
-3mA
90%
I
G
I
D
V
DS
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
1000
Fig 10b.
Switching Time Waveforms
(Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
Thermal Response
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
V
DD
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