PD - 91802C
IRF7353D1
FETKY
ä
MOSFET / Schottky Diode
Co-packaged HEXFET
®
Power MOSFET
and Schottky Diode
l
Ideal For Buck Regulator Applications
l
N-Channel HEXFET
l
Low V
F
Schottky Rectifier
l
Generation 5 Technology
l
SO-8 Footprint
Description
l
A
A
S
G
1
8
K
K
D
D
V
DSS
= 30V
R
DS(on)
= 0.029Ω
Schottky Vf = 0.39V
2
7
3
6
4
5
Top View
The
FETKY
family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current
Pulsed Drain Current
À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Á
Junction and Storage Temperature Range
Maximum
6.5
5.2
52
2.0
1.3
16
± 20
-5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Junction-to-Ambient
Maximum
62.5
Units
°C/W
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Starting T
J
= 25°C, L = 10mH, R
G
= 25Ω, I
AS
= 4.0A
I
SD
≤
4.0A, di/dt
≤
74A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Surface mounted on FR-4 board, t
≤
10sec.
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1
10/20/04
IRF7353D1
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
—
—
—
—
—
Typ.
—
0.023
0.032
—
14
—
—
—
—
22
2.6
6.4
8.1
8.9
26
17
650
320
130
Max. Units
Conditions
—
V
V
GS
= 0V, I
D
= 250µA
0.032
V
GS
= 10V, I
D
= 5.8A
Ω
0.046
V
GS
= 4.5V, I
D
= 4.7A
—
V
V
DS
= V
GS
, I
D
= 250µA
—
S
V
DS
= 24V, I
D
= 5.8A
1.0
V
DS
= 24V, V
GS
= 0V
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
33
I
D
= 5.8A
3.9
nC
V
DS
= 24V
9.6
V
GS
= 10V (see figure 8)
12
V
DD
= 15V
13
I
D
= 1.0A
ns
39
R
G
= 6.0Ω
26
R
D
= 15Ω
—
V
GS
= 0V
—
pF
V
DS
= 25V
—
ƒ = 1.0MHz (see figure 7)
Conditions
MOSFET Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Body Diode Forward Voltage
t
rr
Reverse Recovery Time (Body Diode)
Q
rr
Reverse Recovery Charge
Typ. Max. Units
—
2.5
A
—
30
0.78 1.0
V
45
68
ns
58
87
nC
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/µs
Â
Schottky Diode Maximum Ratings
I
F(av)
I
SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
2.7
A
1.9
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
See Fig. 14
T
A
= 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
Schottky Diode Electrical Specifications
V
FM
Parameter
Max. Forward voltage drop
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
92
pF
3600 V/ µs
Conditions
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 30V T
J
= 25°C
T
J
= 125°C
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Rated V
R
I
RM
C
t
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
2
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IRF7353D1
Power Mosfet Characteristics
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
100
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
10
3.0V
3.0V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
V DS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 5.8A
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
10
1.5
1.0
0.5
1
3.0
3.5
4.0
V
DS
= 10V
20µs PULSE WIDTH
4.5
5.0
A
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF7353D1
Power Mosfet Characteristics
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.040
0.036
V
GS
= 4.5V
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.12
0.10
0.08
0.032
0.06
0.028
I
D
= 5.8A
0.04
0.024
V
GS
= 10V
0.02
0.020
0
10
20
30
40
A
0.00
0
3
6
9
12
15
A
I
D
, Drain Current (A)
V
GS
, Gate-to-Source Voltage (V)
Fig 5.
Typical On-Resistance Vs. Drain
Current
1200
Fig 6.
Typical On-Resistance Vs. Gate
Voltage
20
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 5.8A
V
DS
= 15V
16
C, Capacitance (pF)
900
C
iss
C
oss
12
600
8
300
C
rss
4
0
1
10
100
A
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 7.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8.
Typical Gate Charge Vs.
Gate-to-Source Voltage
4
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IRF7353D1
Power Mosfet Characteristics
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
P
DM
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 9.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
I
SD
, Reverse Drain Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
1.4
A
1.6
V
SD
, Source-to-Drain Voltage (V)
Fig 10.
Typical Source-Drain Diode
Forward Voltage
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