PD- 91667D
IRF7321D2
FETKY
MOSFET & Schottky Diode
l
l
l
l
l
l
TM
Co-packaged HEXFET® Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET®
Low V
F
Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
A
A
S
G
1
8
K
K
D
D
V
DSS
= -30V
R
DS(on)
= 0.062Ω
Schottky Vf = 0.52V
2
7
3
6
4
5
Top View
Description
The
FETKY
TM
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
SO-8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Á
Junction and Storage Temperature Range
Maximum
-4.7
-3.8
-38
2.0
1.3
16
± 20
-5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Junction-to-Ambient
Ã
Maximum
62.5
Units
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
SD
≤
-2.9A, di/dt
≤
-77A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300µs – duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤
10sec.
1
www.irf.com
10/15/04
IRF7321D2
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.042
0.076
–––
7.7
–––
–––
–––
–––
23
3.8
5.9
13
13
34
32
710
380
180
Typ.
–––
–––
-0.78
44
42
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
0.062
V
GS
= -10V, I
D
= -4.9A
Ω
0.098
V
GS
= -4.5V, I
D
= -3.6A
–––
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -15V, I
D
= -4.9A
-1.0
V
DS
= -24V, V
GS
= 0V
µA
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 55°C
100
V
GS
= -20V
nA
-100
V
GS
= 20V
34
I
D
= -4.9A
5.7
nC V
DS
= -15V
8.9
V
GS
= -10V, See Fig. 6
19
V
DD
= -15V
20
I
D
= -1.0A
ns
51
R
G
= 6.0Ω
48
R
D
= 15Ω,
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
Max. Units
Conditions
-2.5
A
-30
-1.0
V
T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
66
ns
T
J
= 25°C, I
F
= -1.7A
63
nC di/dt = 100A/µs
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
See Fig.14
Tc = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Min.
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
–––
Body Diode Forward Voltage
–––
Reverse Recovery Time (Body Diode) –––
Reverse Recovery Charge
–––
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Schottky Diode Maximum Ratings
If (av)
I
SM
Max. Units
3.2
A
2.0
200
20
A
Schottky Diode Electrical Specifications
Vfm
Parameter
Max. Forward voltage drop
Max. Units
0.57
0.77
V
0.52
0.79
0.30
mA
37
310 pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C .
Vr = 30V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
Irm
Ct
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7321D2
Power Mosfet Characteristics
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
10
-3.0V
-3.0V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
-VDS, Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.0
-
4.9A
I
D
=
-
4.9A
-I
D
, Drain-to-Source Current (A)
1.5
T
J
= 25°C
T
J
= 150°C
10
1.0
0.5
1
3.0
3.5
4.0
4.5
V
DS
= -10V
20µs PULSE WIDTH
5.0
5.5
6.0
A
0.0
-60 -40 -20
-
10V
V
GS
=
-
10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7321D2
Power Mosfet Characteristics
1400
V
GS
= 0V
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
20
SHORTED
I
D
= -4.9A
V
DS
=-15V
1200
-V
GS
, Gate-to-Source Voltage (V)
A
16
C, Capacitance (pF)
1000
C
iss
C
oss
800
12
600
8
400
C
rss
4
200
0
1
10
100
0
0
10
20
30
40
-
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150°C
10
-I
D
, Drain Current (A)
I
100us
10
T
J
= 25°C
1ms
1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
10ms
100
1.4
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7321D2
Power Mosfet Characteristics
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 9.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.5
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.6
0.16
0.12
0.4
0.3
0.08
I
D
= -4.9A
0.2
V
GS
= -4.5V
0.04
0.1
V
GS
= -10V
0.0
0
10
20
30
A
0.00
0
-I
D
, Drain Current (A)
-V
GS
, Gate -to-Source Voltage (V)
3
6
9
12
15
A
Fig 10.
Typical On-Resistance Vs. Drain
Current
Fig 11.
Typical On-Resistance Vs. Gate
Voltage
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