PD - 91435C
IRF7311
HEXFET
®
Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Fully Avalanche Rated
S1
G1
S2
G2
1
8
7
D1
D1
D2
D2
2
V
DSS
= 20V
3
6
4
5
R
DS(on)
= 0.029Ω
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Maximum
20
± 12
6.6
5.3
26
2.5
2.0
1.3
100
4.1
0.20
5.0
-55 to + 150
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
5/29/01
IRF7311
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
20
–––
–––
–––
0.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.027 ––– V/°C Reference to 25°C, I
D
= 1mA
0.023 0.029
V
GS
= 4.5V, I
D
= 6.0A
Ω
0.030 0.046
V
GS
= 2.7V, I
D
= 5.2A
––– –––
V
V
DS
= V
GS
, I
D
= 250µA
20 –––
S
V
DS
= 10V, I
D
= 6.0A
––– 1.0
V
DS
= 16V, V
GS
= 0V
µA
––– 5.0
V
DS
= 16V, V
GS
= 0V, T
J
= 55°C
––– 100
V
GS
= 12V
nA
––– -100
V
GS
= -12V
18
27
I
D
= 6.0A
2.2 3.3
nC V
DS
= 10V
6.2 9.3
V
GS
= 4.5V, See Fig. 10
8.1
12
V
DD
= 10V
17
25
I
D
= 1.0A
ns
38
57
R
G
= 6.0Ω
31
47
R
D
= 10Ω
900 –––
V
GS
= 0V
430 –––
pF
V
DS
= 15V
200 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
2.5
A
26
1.0
77
86
V
ns
nC
––– 0.72
––– 52
––– 58
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
4.1A, di/dt
≤
92A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Starting T
J
= 25°C, L = 12mH
R
G
= 25Ω, I
AS
= 4.1A.
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board
IRF7311
100
VGS
TOP
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
TOP
10
10
1.50V
1.50V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
1
0.1
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
10
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
T
J
= 25
°
C
1
1.5
V DS = 10V
20µs PULSE WIDTH
2.0
2.5
3.0
1
0.4
0.6
0.8
1.0
1.2
V
GS
= 0 V
1.4
1.6
V
GS
, Gate-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
IRF7311
I
D
= 6.0A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
R
DS
(on) , Drain-to-Source On Resistance (Ω)
2.0
0.032
1.5
V
G S
= 2.7V
0.028
1.0
0.024
0.5
V
G S
= 4.5V
0.020
0
10
20
30
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
A
T
J
, Junction Temperature (
°
C)
I
D
, Drain C urrent (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
0.05
R
DS
(on) , Drain-to-Source On Resistance (Ω)
300
E
AS
, Single Pulse Avalanche Energy (mJ)
TOP
250
BOTTOM
ID
1.8A
3.3A
4.1A
0.04
200
0.03
150
I
D
= 6.6A
100
0.02
50
0.01
0
2
4
6
8
A
0
25
50
75
100
125
150
V
G S
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (
°
C)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
IRF7311
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
C
iss
C
rs s
C
iss
C
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
10
I
D
= 6.0A
V
DS
= 10V
8
C , Capacitance (pF)
1200
C
oss
800
6
4
C
rss
400
2
0
1
10
100
A
0
0
5
10
15
20
25
30
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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