PD- 91850C
IRF7220
HEXFET
®
Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
S
1
8
7
A
D
D
D
D
S
S
G
2
V
DSS
= -14V
3
6
4
5
R
DS(on)
= 0.012Ω
T op V ie w
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-14
±11
±8.8
±88
2.5
1.6
0.02
110
± 12
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
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1
7/16/99
IRF7220
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-14
–––
–––
–––
-0.60
8.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -5mA
-0.006 ––– V/°C Reference to 25°C, I
D
= -1mA
.0082 0.012
V
GS
= -4.5V, I
D
= -11A
Ω
.0125 0.020
V
GS
= -2.5V, I
D
= -8.8A
––– –––
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -10V, I
D
= -11A
––– -5.0
V
DS
= -11.2V, V
GS
= 0V
µA
––– -100
V
DS
= -11.2V, V
GS
= 0V, T
J
= 70°C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
84 125
I
D
= -11A
13
20
nC V
DS
= -10V
37
55
V
GS
= -5.0V
19 –––
V
DD
= -10V
420 –––
I
D
= -11A
ns
140 –––
R
G
= 6.2Ω
1040 –––
R
D
= 0.91Ω
8075 –––
V
GS
= 0V
4400 –––
pF
V
DS
= -10V
4150 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
160
147
-2.5
A
-88
-1.2
240
220
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting T
J
= 25°C, L = 1.8mH
R
G
= 25Ω, I
AS
= 11A. (See Figure 10)
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRF7220
80
VG S
- 4.5V
- 4.0V
- 3.0V
- 2.0V
- 1.8V
- 1.6V
- 1.4V
BO TTO M - 1.2V
TOP
60
-I D , Drain-to-S ource C urrent (A )
-ID , D ra in-to -S o urce C urre nt (A )
50
60
VG S
- 4 .5 V
- 4 .0 V
- 3 .0 V
- 2 .0 V
- 1 .8 V
- 1 .6 V
- 1 .4 V
B O TT O M - 1 .2 V
TO P
300µs PULSE W IDTH
T
J
= 25°C
40
40
30 0µ s P U LSE W ID T H
T
J
= 1 50°C
30
20
20
10
-1.2V
0
0
2
4
6
8
10
-1.2V
A
0
0
2
4
6
8
10
A
-V D S , D ra in-to-Source V oltage (V)
-VD S , D rain-to-Sou rce V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
I
D
= -11A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-I
D
, D ra in -to -S o urc e C urre n t (A )
1.5
100
T
J
= 1 5 0 ° C
1.0
T
J
= 2 5 °C
10
0.5
1
1.0
2.0
3.0
4.0
V
D S
= -1 0 V
2 0 µ s P U L S E W ID TH
5.0
6.0
7.0
8.0
A
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V
G S
, G a te -to -S o u rc e V o lta ge (V )
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF7220
10000
10
9000
-V
GS
, Gate-to-Source Voltage (V)
V
G S
= 0V,
f = 1kHz
C
is s
= C
g s
+ C
g d
, C
d s
SH ORTE D
C
rs s
= C
g d
C
oss
= C
ds
+ C
gd
I
D
= -11A
V
DS
=-10V
8
C , C apac it ance (pF )
C
iss
8000
6
7000
4
6000
5000
C
oss
C
rss
2
4000
1
10
A
0
0
20
40
60
80
100
120
-V
D S
, D rain-to-So urc e Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
S D
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150°C
-I
D
, Drain Current (A)
I
100
100us
T
J
= 25°C
1
1ms
10
10ms
0.1
0.0
0.5
1.0
1.5
V
G S
= 0V
2.0
A
2.5
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
S D
, S ou rce-to-D ra in Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7220
12
300
E
AS
, Single Pulse Avalanche Energy (mJ)
10
250
ID
TOP
-4.9A
-8.8A
BOTTOM -11A
-I
D
, Drain Current (A)
8
200
6
150
4
100
2
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
0.02
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
t
2
1
0.01
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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