PD - 91405C
IRF5210S/L
HEXFET
®
Power MOSFET
Advanced Process Technology
l
Surface Mount (IRF5210S)
l
Low-profile through-hole (IRF5210L)
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
Description
l
D
V
DSS
= -100V
R
DS(on)
= 0.06Ω
G
I
D
= -40A
S
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for low-
profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-40
-29
-140
3.8
200
1.3
± 20
780
-21
20
-5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
5/13/98
IRF5210S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-100
–––
–––
-2.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
86
79
81
7.5
2700
790
450
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.06
Ω
V
GS
= -10V, I
D
= -24A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -50V, I
D
= -21A
-25
V
DS
= -100V, V
GS
= 0V
µA
-250
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
180
I
D
= -21A
25
nC V
DS
= -80V
97
V
GS
= -10V, See Fig. 6 and 13
–––
V
DD
= -50V
–––
I
D
= -21A
ns
–––
R
G
= 2.5Ω
–––
R
D
= 2.4Ω, See Fig. 10
Between lead,
nH
–––
and center of die contact
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -40
showing the
A
G
integral reverse
––– ––– -140
p-n junction diode.
S
––– ––– -1.6
V
T
J
= 25°C, I
S
= -24A, V
GS
= 0V
––– 170 260
ns
T
J
= 25°C, I
F
= -21A
––– 1.2 1.8
µC
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRF5210 data and test conditions
Starting T
J
= 25°C, L = 3.1mH
R
G
= 25Ω, I
AS
= -21A. (See Figure 12)
T
J
≤
175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤
-21A, di/dt
≤
-480A/µs, V
DD
≤
V
(BR)DSS
,
IRF5210S/L
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOT TOM - 4.5V
TO P
1000
-ID , D rain-to-S ou rc e C urre nt (A )
100
-ID , Drain-to-Source Current (A )
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
10
10
-4 .5V
4 0µ s P U LS E W ID TH
T
C
= 1 75 °C
0.1
1
10
1
0.1
1
-4.5 V
4 0µ s P U LS E W ID TH
T c = 2 5°C
A
10
100
1
100
A
-VD S , D rain-to-S ourc e V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
D S (on)
, D ra in-to -S o urc e O n R e s is ta nc e
(N o rm alize d)
I
D
= -3 5A
-I
D
, D rain-to-S ource C urrent (A)
2.5
100
T
J
= 2 5 °C
T
J
= 17 5 °C
2.0
1.5
10
1.0
0.5
1
4
5
6
7
V
DS
= -5 0 V
4 0µ s P U L S E W ID TH
8
9
A
10
0.0
-60
-40 -20
0
20
40
60
80
V
G S
= -10 V
100 120 140 160 180
A
-V
G S
, Ga te -to-Source Volta ge (V)
T
J
, J unc tion T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF5210S/L
6000
20
5000
-V
G S
, G ate-to-S ource V oltage (V )
C
iss
V
GS
C
iss
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
I
D
= -2 1A
V
D S
= -80 V
V
D S
= -50 V
V
D S
= -20 V
16
C , Capacitance (pF)
4000
C
oss
3000
12
C
rss
2000
8
4
1000
0
1
10
100
A
0
0
40
80
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
120
160
A
200
-V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
SD
, Reverse D rain Current (A )
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
-I
D
, D rain C urrent (A )
100
100
10µ s
T
J
= 1 75 °C
T
J
= 2 5°C
10
100µs
10
1m s
1
0.4
0.8
1.2
1.6
V
G S
= 0V
2.0
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
10m s
2.4
A
100
1000
-V
S D
, S ourc e-to-D rain V oltage (V )
-V
D S
, D rain-to-S ourc e V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF5210S/L
50
V
DS
40
R
D
V
GS
R
G
-I
D
, Drain Current (A)
D.U.T.
+
30
-10V
20
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
10
t
d(on)
t
r
t
d(off)
t
f
0
25
50
75
100
125
150
175
V
GS
10%
T
C
, Case Temperature ( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
V
DD
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
