Data Sheet 60049-H
(NOTE: For new designs, we
recommend IR’s new products IPS521 and IPS521S)
IR6220
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Features
•
•
•
•
•
•
•
•
•
•
PWM current limit for short circuit protection
Over-temperature protection
Active output negative clamp
Reverse battery protection for logic circuit
Broken ground protection
Short to V
cc
protection
Low noise charge pump
Sleep mode supply current
4kV ESD protection on all leads
Logic ground isolated from power ground
Product summary
V
cc(op)
5-50V
R
DS
(on)
I
lim
T
j(sd)
E
av
Applications
•
Solenoid driver
•
Programmable logic controller
100m
Ω
10A
170°C
200mJ
General Description
The IR6220 is a 5 terminal monolithic HIGH SIDE SWITCH with
built in short circuit, over- temperature, ESD protections,
inductive load turn off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting the
average current during short circuit if the drain current exceeds
10A. The protection circuit latches off the high side switch if the
junction temperature exceeds 170
o
C and latches on after the
junction temperature falls by 10
o
C. The Vcc (drain) to out
(source) voltage is actively clamped at 55V, improving its perfor-
mance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating and
referenced to the source of the Power MOSFET. Thus the logic
to power ground isolation can be as high as 50V. This allows
operation with larger offset as well as controlling the switch
during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short
circuit, over temperature and open load detection.
Truth Table
Condition
Normal
Normal
Output Open
Output Open
Shorted Output
In
H
L
H
L
H
Out
H
L
H
H
Current-Limiting
PWM Mode
Dg
H
L
H
H
L
L
L
L
L
Shorted Output
Over-Temperature
H
Over-Temperature
L
L
L
L
Block Diagram
Vcc
Available Packages
5 Lead SMD220
5 Lead TO-220
GND
OUT
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1
IR6220
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(T
C
= 25
o
C unless otherwise specified.)
Symbol
Vcc
Parameter
permanent
reverse
Logic to power ground offset
Input voltage
Input current
Output voltage
Output current
Diagnostic output voltage
Diagnostic output current
Repetitive avalanche energy
Electrostatic discharge
(Human Body Model)
Electrostatic discharge
(Machine Model)
Power dissipation
Operating junction temperature range
Storage temperature range
Lead temperature (soldering, 10 seconds)
Supply voltage
Min.
-0.3
-16
Vcc -50
-0.3
—
Vcc -50
—
-0.3
—
—
—
—
—
-40
-40
—
Max.
50
—
Vcc +0.3
30
10
Vcc +0.3
self-limited
Units
V
mA
V
A
V
mA
mJ
V
V
W
o
Test Conditions
For 10 seconds, (1)
Voffset
Vin
I in
Vout
I out
Vdg
I dg
E av
ESD1
ESD2
PD
T Jop
T Stg
TL
NOTES:
(1) with 15kΩ resistors in input and diagnostic
30
10
200
4000
1000
28
150
150
300
I = 2A (2)
C = 100 pF,R = 1500Ω
C = 200 pF, R = 0Ω
Tcase= 25
o
C
C
(2) maximum frequency depends on heatsink (rectangular waveform)
Static Electrical Characteristics
(T
C
= 25
°
C unless otherwise specified.)
Symbol Parameter
V
ccop
I
ccoff
I
ccon
I
ccac
V
ih
V
il
I
lon
I
loff
I
oh
I
ol
V
dgl
I
dgh
R
DS
(on)
Operating voltage range
Sleep mode supply current
Supply current (average)
Supply current (AC RMS)
High level input threshold voltage
Low level input threshold voltage
On-state input current
Off-state input current
Output leakage current
Output leakage current
Low level diagnostic output voltage
Diagnostic output leakage current
On-state resistance
Min.
5
—
—
—
—
1
10
1
—
0
—
0
—
—
Typ.
—
40
3
20
2
1.8
—
—
20
—
0.3
—
80
120
Max. Units Test Conditions
35
—
—
—
2.5
—
70
30
—
10
—
10
100
—
V
µA
mA
µA
V
V
in
= 3.5V
V
in
= 0.4V
V
out
= 6V
V
out
= 0V
I
dg
= 1.6mA
V
dg
= 5V
I
out
= 1A
V
cc
= 5V, I
out
= 1A
V
cc
=24V, V
in
= 0V
V
in
= 5V
V
in
= 5V
µ
A
V
µA
mΩ
2
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IR6220
Switching Electrical Characteristics
(V
CC
= 14V, resistive load (R
L
) = 12Ω, T
C
= 25
°
C.)
Symbol Parameter
t
c
D
c
t
on
t
off
dv/dt
on
dv/dt
off
Over-current cycle time
Over-current duty cycle
Turn-on delay time to 90%
Turn-off delay time to 10%
Slew rate on
Slew rate off
Min.
—
—
—
—
—
—
Typ.
5
10
50
60
3
5
Max. Units Test Conditions
—
—
—
—
—
—
ms
%
µ
s
V/
µ
s
Protection Characteristics
Symbol Parameter
I
lim
V
sc
V
slh
V
cl1
V
cl2
Internal current limit
Short circuit detection voltage
Open load detection voltage
Output negative clamp
Output negative clamp
Min.
—
—
—
50
—
Typ.
10
3.5
3.5
54
56
Max.
—
—
—
—
62
Units Test Conditions
)
V
I
out
=
10mA
I
out
=
2A
Thermal Characteristics
Symbol Parameter
T
jsd
T
hys
R
thjc
R
thja
Thermal shutdown temperature
Thermal hysteresis
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Min.
—
—
—
—
Typ.
170
10
3.5
50
Max. Units Test Conditions
—
—
—
—
o
C
o
C/W
Lead Assignments
3 (Vcc)
3 (Vcc)
1 - Ground
2 - In
3 - Vcc
4 - DG
5 - Out
12345
12345
5 Lead - TO-220
IR6220
Part Number
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5 Lead - D
2
PAK (SMD220)
IR6220S
3
IR6220
Case Outline 5 Lead - TO-220
IRGB 01-3042 01
Tape & Reel 5 Lead - D
2
PAK (SMD220)
01-3071 00 / 01-3072 00
4
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IR6220
Case Outline 5 Lead - SMD220 (D
2
PAK)
3
01-3066 00
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++44 (0) 20 8645 8000
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 81 (0) 33 983 0086
IR HONG KONG:
Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon,
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 2/26/2000
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