Preliminary Data Sheet No. PD60083-K
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
IR51H(D)224
IR51H(D)320
IR51H(D)420
SELF-OSCILLATING HALF BRIDGE
Features
•
•
•
•
Output Power MOSFETs in half-bridge configuration
High side gate drive designed for bootstrap operation
Bootstrap diode integrated into package (HD type)
Accurate timing control for both Power MOSFET
s
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
•
Internal oscillator with programmable frequency
Product Summary
VIN (max) 250V (IR51H(D)224)
400V (IR51H(D)320)
500V (IR51H(D)420)
Duty Cycle
Deadtime
Rds(on)
50%
1.2µs
1.1
Ω
(IR51H(D)224)
3.0
Ω
(IR51H(D)320)
3.6
Ω
(IR51H(D)420)
2.0W
f
=
1
1
.
4
× (
R
T
+
75
Ω
) ×
C
T
•
15.6V Zener clamped Vcc for offline operation
•
Half-bridge output is out of phase with R
T
•
Micropower startup
PD (TA = 25
o
C)
Package
Description
The IR51H(D)XXX are complete high voltage, high speed, self-
oscillating half-bridge circuits. Proprietary HVIC and latch im-
mune CMOS technologies, along with the HEXFET
®
power
MOSFET technology, enable ruggedized single package construc-
tion. The front-end features a programmable oscillator which func-
tions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation. The output
features two HEXFETs in a half-bridge configuration with an in-
ternally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
9-Lead SIP
without leads 5 and 8
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.
Typical Connection
DC Bus
VIN
D1
IR51H(D)XXX
1
Vcc
V
B
6
External
Fast recovery diode D1 is
not required for HD type
2
R
T
3
C
T
4
R
T
V
IN
9
C
T
VO
7
COM
TO,
LOAD
COM
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1
IR51H(D)224
IR51H(D)320
IR51H(D)420
Absolute Maximum Ratings
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any
lead. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions.
Symbol
V
IN
Definition
High voltage supply
-224
-320
-420
Minimum
- 0.3
- 0.3
- 0.3
Vo - 0.3
-0.3
- 0.3
- 0.3
—
-5
—
—
—
-55
-55
—
Maximum
250
400
500
Vo +2.5
V
IN
+ 0.3
V
cc
+ 0.3
V
cc
+ 0.3
25
5
3.5
2.00
60
150
150
300
Units
V
B
V
O
V
RT
V
CT
I
cc
I
RT
dV/dt
P
D
Rth
JA
T
J
T
S
T
L
High side floating supply
Half-bridge output
R
T
voltage
C
T
voltage
Supply current (note 1)
R
T
output current
Peak diode recovery
Package power dissipation @ TA
≤
+25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
V
mA
V/ns
W
o
C/W
o
C
NOTE 1:
This IC contains a zener clamp structure between V
CC
and COM which has a nominal breakdown voltage of 15.6V.
Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V
CLAMP
specified in the Electrical Characteristics Section
2
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(NOTE: For new designs, we
recommend the IR53H(D)420-P)
IR51H(D)224
IR51H(D)320
IR51H(D)420
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used
within the recommended conditions.
Symbol
V
B
V
IN
Definition
High side floating supply absolute voltage
High voltage supply
-224
-320
-420
-224
-320
-420
-224
-320
-420
Minimum
Vo + 10
—
—
—
-3.0 (note 2)
—
—
—
—
—
—
(note 3)
-40
Maximum
Vo + Vclamp
250
400
500
V
IN
1.1
0.9
0.7
0.7
0.6
0.5
5
125
Units
V
V
O
I
D
Half-bridge output voltage
Continuous drain current (TA = 25°C)
A
(TA = 85°C)
I
CC
T
A
Supply current
Ambient temperature
mA
°C
NOTE 2:
Care should be taken to avoid switching conditions where the V
S
node flies inductively below ground by more than 5V.
NOTE 3:
Enough current should be supplied to the V
CC
lead of the IC to keep the internal 15.6V zener diode clamping the
voltage at this lead.
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, TA = 25
o
C unless otherwise specified.
Symbol Definition
trr
Reverse recovery time (MOSFET body diode)
-224
-320
-420
-224
-320
-420
Min.
—
—
—
—
—
—
—
Typ.
200
270
240
0.7
0.6
0.5
50
Max.
—
—
—
—
—
—
—
Units Test Conditions
ns
I
F
=1.1A
I
F
=900mA
di/dt
I
F
=700mA
=100
I
F
=1.1A
I
F
=900mA A/µs
I
F
=700mA
fosc = 20 kHz
Qrr
Reverse recovery charge (MOSFET body diode)
µC
%
D
R
T
duty cycle
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3
IR51H(D)224
IR51H(D)320
IR51H(D)420
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
Static Electrical Characteristics
V
BIAS
(V
CC
, V
B
) = 12V, TA = 25
o
C unless otherwise specified.
Symbol Definition
V
CCUV+
V
CC
supply undervoltage positive going
threshold
V
CCUV-
V
CC
supply undervoltage negative going
threshold
I
QCC
Quiescent V
CC
supply current
V
CLAMP
V
CC
zener shunt clamp voltage
I
QBS
Quiescent V
BS
supply current
l
OS
f
OSC
Offset supply leakage current
Oscillator frequency
Min.
—
—
—
—
—
—
—
—
Typ.
8.4
8.0
300
15.6
30
—
20
100
0.001
100
20
200
20
200
100
8.0
4.0
Max.
—
—
—
—
—
50
—
—
1.0
—
—
—
—
—
—
—
—
Units Test Conditions
V
V
µA
V
µA
V
CC
> V
CCUV
I
CC
= 5mA
V
B
= V
IN
= 500V
R
T
= 35.7 kΩ
C
T
= 1 nF
R
T
= 7.04 kΩ
C
T
= 1 nF
Note 2
I
RT
= 100µA
I
RT
= -1mA
I
RT
= 100µA
I
RT
= -1mA
I
RT
= 100µA
kHz
µA
I
CT
V
CTUV
V
RT+
V
RT-
V
RTUV
V
CT+
V
CT-
C
T
input current
C
T
undervoltage lockout
R
T
high level output voltage, V
CC
- R
T
R
T
low level output voltage
R
T
undervoltage lockout, V
CC
- R
T
2/3 V
CC
threshold
1/3 V
CC
threshold
-224
-320
-420
-224
-320
-420
—
—
—
—
—
—
—
—
—
mV
kHz
I
F
=1.1A
I
F
=900mA
I
F
=700mA
I
F
=1.1A
I
F
=900mA
I
F
=700mA
Rds(on) Static-drain-to-source on-resistance
—
—
—
—
—
—
1.1
1.8
3.0
0.85
0.7
0.8
—
—
—
—
—
—
Ω
di/dt
=100
A/µs
V
SD
Diode forward voltage
V
4
www.irf.com
(NOTE: For new designs, we
recommend the IR53H(D)420-P)
IR51H(D)224
IR51H(D)320
IR51H(D)420
Functional Block Diagram
V
D1
B
VIN
6
9
1
Vcc
H
2
R
T
O
IRFCXXX
IR2151
V
S
7
VO
L
3
C
T
O
IRFCXXX
4
COM
Fast recovery diode D1 is
incorporated in IR51HDXXX only
Lead Definitions
Symbol
V
CC
R
T
C
T
Lead Description
Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V norminal is included
to allow the V
CC
to be current fed directly from VIN typically by means of a high value resistor.
Oscillator timing resistor output; a resistor is connected from R
T
to C
T
. RT is out of phase with the half-
bridge output (VO).
Oscillator timing capacitor input; a capacitor is connected from C
T
to COM in order to program the
oscillator frequency according to the following equation:
f
=
1
1
.
4
× (
R
T
+
75
Ω
) ×
C
T
V
B
V
IN
VO
COM
C
T
PIN also invokes shutdown function (see note 2) where 75Ω is the effective impedence of the R
T
output stage.
High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed
to feed from V
CC
to V
B
. (HD type circuits incorporate this diode).
High voltage supply
Half Bridge output
Logic and low side of half bridge return
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