Data Sheet No. PD60163-U
IR2109(4)
(S) & (PbF)
Features
HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Dead Time
600V max.
120 mA / 250 mA
10 - 20V
750 & 200 ns
540 ns
•
Floating channel designed for bootstrap operation
•
•
•
•
•
•
•
•
•
•
•
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time, and programmable
up to 5us with one external R
DT
resistor (IR21094)
Lower di/dt gate driver for better noise immunity
Shut down input turns off both channels.
Available in Lead-Free
(programmable up to 5uS for IR21094)
Packages
14 Lead SOIC
Description
The IR2109(4)(S) are high voltage, high speed power
8 Lead SOIC
MOSFET and IGBT drivers with dependent high and
14 Lead PDIP
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
8 Lead PDIP
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
IN
SD
V
B
HO
V
S
LO
TO
LOAD
IN
SD
COM
up to 600V
IR21094
IR2109
HO
V
CC
IN
SD
V
CC
IN
SD
DT
V
SS
R
DT
V
SS
COM
LO
V
B
V
S
TO
LOAD
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
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1
IR2109(4) (
S
) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
DT
V
IN
V
SS
dV
S
/dt
P
D
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Programmable dead-time pin voltage (IR21094 only)
Logic input voltage (IN & SD)
Logic ground (IR21094/IR21894 only)
Allowable offset supply voltage transient
Package power dissipation @ T
A
≤
+25°C
(8 Lead PDIP)
(8 Lead SOIC)
(14 lead PDIP)
(14 lead SOIC)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
V
SS
- 0.3
V
SS
- 0.3
V
CC
- 25
—
—
—
—
—
—
—
—
—
—
-50
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
1.0
0.625
1.6
1.0
125
200
75
120
150
150
300
Units
V
V/ns
W
Rth
JA
Thermal resistance, junction to ambient
(8 Lead PDIP)
(8 Lead SOIC)
(14 lead PDIP)
(14 lead SOIC)
°C/W
T
J
T
S
T
L
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
°C
2
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IR2109(4) (
S
) & (PbF)
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at 15V differential.
Symbol
VB
V
S
V
HO
V
CC
V
LO
V
IN
DT
V
SS
T
A
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (IN & SD)
Programmable dead-time pin voltage (IR21094 only)
Logic ground (IR21094 only)
Ambient temperature
Min.
V
S
+ 10
Note 1
V
S
10
0
V
SS
V
SS
-5
-40
Max.
V
S
+ 20
600
V
B
20
V
CC
V
CC
V
CC
5
125
Units
V
°
C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25°C, DT = VSS unless otherwise specified.
Symbol
ton
toff
tsd
MT
tr
tf
DT
MDT
Definition
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Delay matching, HS & LS turn-on/off
Turn-on rise time
Turn-off fall time
Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
HO turn-off to LO turn-on (DT
HO-LO)
Deadtime matching = DT
LO - HO
- DT
HO-LO
Min.
—
—
—
—
—
—
400
4
—
—
Typ.
750
200
200
0
150
50
540
5
0
0
Max. Units Test Conditions
950
280
280
70
220
80
680
6
60
600
usec
nsec
nsec
V
S
= 0V
V
S
= 0V
RDT= 0
RDT = 200k
(IR21094)
RDT=0
RDT = 200k
(IR21094)
V
S
= 0V
V
S
= 0V or 600V
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3
IR2109(4) (
S
) & (PbF)
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, DT= V
SS
and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are referenced to V
SS
/COM and are applicable to the respective input leads: IN and SD. The V
O
, I
O
and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
V
IH
V
IL
V
SD,TH+
V
SD,TH-
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
I
O-
Definition
Logic “1” input voltage for HO & logic “0” for LO
Logic “0” input voltage for HO & logic “1” for LO
SD input positive going threshold
SD input negative going threshold
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
Logic “0” input bias current
V
CC
and V
BS
supply undervoltage positive going
threshold
V
CC
and V
BS
supply undervoltage negative going
threshold
Hysteresis
Output high short circuit pulsed vurrent
Output low short circuit pulsed current
Min. Typ. Max. Units Test Conditions
2.9
—
2.9
—
—
—
—
20
0.4
—
—
8.0
7.4
0.3
120
250
—
—
—
—
0.8
0.3
—
75
1.0
5
—
8.9
8.2
0.7
200
350
—
0.8
—
0.8
1.4
0.6
50
130
1.6
20
2
9.8
9.0
V
—
—
—
V
O
= 0V, PW
≤
10
µs
V
O
= 15V,PW
≤
10
µs
µA
mA
V
V
CC
= 10V to 20V
V
CC
= 10V to 20V
V
CC
= 10V to 20V
V
CC
= 10V to 20V
I
O
= 20 mA
I
O
= 20 mA
V
B
= V
S
= 600V
V
IN
= 0V or 5V
V
IN
= 0V or 5V
RDT = 0
µA
IN = 5V, SD = 0V
IN = 0V, SD = 5V
mA
4
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IR2109(4) (
S
) & (PbF)
Functional Block Diagrams
VB
IR2109
IN
VSS/COM
LEVEL
SHIFT
HV
LEVEL
SHIFTER
PULSE
GENERATOR
UV
DETECT
R
PULSE
FILTER
R
S
Q
HO
VS
DEADTIME
UV
DETECT
VCC
+5V
LO
SD
VSS/COM
LEVEL
SHIFT
DELAY
COM
VB
IR21094
IN
VSS/COM
LEVEL
SHIFT
HV
LEVEL
SHIFTER
PULSE
GENERATOR
UV
DETECT
R
PULSE
FILTER
R
S
Q
HO
VS
DT
+5V
DEADTIME
UV
DETECT
VCC
LO
SD
VSS/COM
LEVEL
SHIFT
DELAY
COM
VSS
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5
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