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SIT8924AE-12-18E-12.000000E

产品描述OSC MEMS 12.0000MHZ LVCMOS SMD
产品类别无源元件   
文件大小671KB,共17页
制造商SiTime
标准
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SIT8924AE-12-18E-12.000000E概述

OSC MEMS 12.0000MHZ LVCMOS SMD

SIT8924AE-12-18E-12.000000E规格参数

参数名称属性值
类型MEMS(硅)
频率12MHz
功能启用/禁用
输出LVCMOS
电压 - 电源1.8V
频率稳定度±25ppm
工作温度-40°C ~ 105°C
电流 - 电源(最大值)4.5mA
等级AEC-Q100
安装类型表面贴装
封装/外壳4-SMD,无引线
大小/尺寸0.098" 长 x 0.079" 宽(2.50mm x 2.00mm)
高度 - 安装(最大值)0.032"(0.80mm)

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SiT8924
Automotive AEC-Q100 Oscillator
The Smart Timing Choice
The Smart Timing Choice
Features
Applications
AEC-Q100 with extended temperature range (-55°C to 125°C)
Frequencies between 1 MHz and 110 MHz accurate to 6 decimal
places
Supply voltage of 1.8V or 2.25V to 3.63V
Excellent total frequency stability as low as ±25 ppm
Industry best G-sensitivity of 0.1 PPB/G
Low power consumption of 3.8 mA typical at 1.8V
LVCMOS/LVTTL compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Automotive, extreme temperature and other high-rel electronics
Infotainment systems, collision detection devices, and in-vehicle
networking
Power train control
Electrical Specifications
Table 1. Electrical Characteristics
[1, 2]
Parameters
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Min.
1
-25
-30
-50
Operating Temperature Range
(ambient)
T_use
-40
-40
-55
Supply Voltage
Current Consumption
Vdd
Idd
1.62
2.25
Duty Cycle
Rise/Fall Time
Output High Voltage
DC
Tr, Tf
VOH
45
90%
Typ.
1.8
4.0
3.8
1.5
1.3
Max.
110
+25
+30
+50
+105
+125
+125
1.98
3.63
4.8
4.5
55
3
2.5
Unit
MHz
ppm
ppm
ppm
°C
°C
°C
V
V
mA
mA
%
ns
ns
Vdd
Condition
Refer to
Table 13 and Table 14
for a list supported frequencies
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
Frequency Range
Frequency Stability and Aging
Operating Temperature Range
Extended Industrial, AEC-Q100 Grade 2
Automotive, AEC-Q100 Grade 1
Extended Temperature, AEC-Q100
All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V
and 3.3V are supported.
No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V
No load condition, f = 20 MHz, Vdd = 1.8V
All Vdds
Vdd = 2.25V - 3.63V, 20% - 80%
Vdd = 1.8V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Pin 1, OE
Pin 1, OE
Pin 1, OE logic high or logic low
Measured from the time Vdd reaches 90% of final value
f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
f = 75 MHz, 2.25V to 3.63V
f = 75 MHz, 1.8V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Supply Voltage and Current Consumption
LVCMOS Output Characteristics
Output Low Voltage
VOL
10%
Vdd
Input Characteristics
Input High Voltage
Input Low Voltage
Input Pull-up Impedence
Startup Time
Enable/Disable Time
RMS Period Jitter
RMS Phase Jitter (random)
VIH
VIL
Z_in
T_start
T_oe
T_jitt
T_phj
70%
100
1.6
1.9
0.5
1.3
30%
10
130
Jitter
2.5
3.0
ps
ps
ps
ps
Vdd
Vdd
k
ms
ns
Startup and Resume Timing
Notes:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and
at 25 °C temperature.
SiTime Corporation
Rev. 1.01
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised June 18, 2015
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