PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 1930 – 1990 MHz
Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs
designed for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced, RoHs-compliant package with slotted and
earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFB191501E
Package H-36248-2
PTFB191501F
Package H-37248-2
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-20
-25
-30
40
Efficiency (%)
ue
25
20
15
10
5
0
45
47
49
IMD Up
30
d
•
•
•
•
•
•
Efficiency
35
IMD (dBc)
-35
-40
-45
-50
-55
-60
31
33
in
nt
IMD Low
ACPR
sc
o
35
37
39
41
43
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.2 A, P
OUT
= 35 W average, ƒ
1
= 1985 MHz, ƒ
2
= 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
di
pr
od
uc
Features
•
•
Broadband internal matching
Typical two-carrier WCDMA performance at
1990 MHz, 30 V
- Average output power = 35 W
- Linear gain = 18 dB
- Efficiency = 30%
- Intermodulation distortion = –35 dBc
Typical CW performance, 1990 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
Pb-free, RoHS-compliant
Symbol
G
ps
Min
—
—
—
ts
Typ
18
30
–35
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 03, 2015-01-14
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.2 A, P
OUT
= 150 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17
42
—
Typ
18
44
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1.2 A
V
GS
= 10 V, V
DS
= 0 V
pr
od
uc
Symbol
Min
65
—
—
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
—
2.4
—
ts
–30
Typ
—
—
—
Max
—
1.0
10.0
—
3.4
1.0
Unit
V
µA
µA
Ω
V
µA
d
0.08
2.9
—
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
nt
in
Symbol
V
DSS
V
GS
T
J
T
STG
R
θJC
ue
Value
65
–6 to +10
200
–40 to +150
0.29
Unit
V
V
°C
°C
°C/W
Junction Temperature
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
Ordering Information
Type and Version
PTFB191501E V1
PTFB191501E V1 R250
PTFB191501F V1
PTFB191501F V1 R250
di
Storage Temperature Range
sc
o
Package Type
H-36248-2
H-36248-2
H-37248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Thermally-enhanced earless flange, single-ended
Shipping
Tray
Tape & Reel 250 pcs
Tray
Tape & Reel 250 pcs
*See Infineon distributor for future availability.
Data Sheet
2 of 15
Rev. 03, 2015-01-14
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-25
-30
1990 MHz Low
1990 MHz Up
1960 MHz Low
1960 MHz Up
1930 MHz Low
1930 MHz Up
Two-carrier WCDMA 3GPP
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
20
50
ts
Efficiency
37
39
41
43
45
47
49
Drain Efficiency (%)
-35
-40
-45
-50
-55
-60
31
33
Gain
Gain (dB)
18
17
16
15
pr
od
uc
31
33
35
30
20
10
0
35
37
39
41
43
45
47
49
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ = 1990 MHz
sc
o
nt
CW Power Sweep
Gain & Efficiency vs. Output Power
in
ue
d
Output Power (dBm)
Output Power (dBm)
Two-tone Broadband Performance
V
DD
= 30 V, I
DQ
= 1.20 A, P
OUT
= 63 W
20
19
18
65
55
60
-5
Drain Efficiency (%)
Gain
50
45
40
35
30
25
20
-15
Gain (dB)
di
45
35
25
15
5
Efficiency
IMD3
-20
-25
-30
-35
-40
17
16
15
14
41
Efficiency
Gain
-45
43
45
47
49
51
53
15
-50
1890 1910 1930 1950 1970 1990 2010 2030
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 15
Rev. 03, 2015-01-14
Return Loss (dB), IMD (dBc)
Gain / Efficiency (dB / %)
55
IRL
-10
Drain Efficiency (%)
19
40
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A,
ƒ
1
= 1990 MHz, ƒ
2
= 1989 MHz
-15
-20
-25
-30
55
50
45
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A,
ƒ
1
= 1990 MHz, ƒ
2
= 1989 MHz
20
55
Efficiency
Efficiency (%)
Gain (dB)
-40
-45
-50
-55
-60
-65
40
42
44
46
48
50
52
54
30
pr
od
uc
17
16
15
40
42
44
46
-20
-30
-35
35
18
35
25
15
5
IMD3
25
20
15
10
5
Efficiency
48
50
52
54
Output Power, PEP (dBm )
Output Power, PEP (dBm)
in
ue
d
Two-tone Drive-up at Selected Frequencies
Intermodulation Distortion vs. Output Power
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ
1
= 1990 MHz, ƒ
2
= 1989 MHz
-20
-30
1990 MHz
1960 MHz
1930 MHz
sc
o
nt
V
DD
= 30 V, I
DQ
= 1.20 A, Tone Spacing = 1 MHz
3rd
IMD (dBc)
IMD (dBc)
-40
-50
-60
-70
41
43
di
-40
-50
-60
-70
40
45
50
5th
7th
45
47
49
51
53
55
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet
4 of 15
Rev. 03, 2015-01-14
Efficiency (%)
40
IMD (dBc)
ts
19
Gain
45
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
CW Performance
Gain vs. Output Power
V
DD
= 30 V, ƒ = 1990 MHz
19
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ = 1990 MHz
21
20
–10 °C
25 °C
85 °C
Efficiency
60
I
DQ
= 1.40 A
Drain Efficiency (%)
Power Gain (dB)
50
40
30
20
18
Gain (dB)
18
17
Gain
16
43 44 45 46 47 48 49 50 51 52 53
10
pr
od
uc
I
DQ
= 0.80 A
17
16
42
44
46
48
19
I
DQ
= 1.20 A
ts
50
52
54
Output Power (dBm)
Output Power (dBm)
Single-carrier WCDMA
in
40
30
ue
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
sc
o
-20
nt
V
DD
= 30 V, I
DQ
= 1.20A, f = 1990 MHz
3GPP_WCDMA, PAR = 8dB, BW 3.84MHz
d
-30
Normalized Bias Voltage
Efficiency
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
0.40 A
1.53 A
2.67 A
3.80 A
4.93 A
6.07 A
-40
20
-50
10
ACP up
ACP low
-60
31
33
35
37
39
41
43
45
47
49
0
Output Power (dBm)
Drain Efficiency (%)
ACP (dBc)
di
Case Temperature (°C)
Data Sheet
5 of 15
Rev. 03, 2015-01-14
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