PTFA211801E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
180 W, 2110 – 2170 MHz
Description
The PTFA211801E is a thermally-enhanced, 180-watt, internally
matched LDMOS FET intended for WCDMA applications. It is
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA211801E
Package H-36260-2
Features
V
DD
= 28 V, I
DQ
= 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
-25
-30
30
Two-carrier WCDMA Drive-up
•
•
Broadband internal matching
Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
Typical CW performance, 2170 MHz, 30 V
- Output power at P
1dB
= 180 W
- Efficiency = 52%
Integrated ESD protection
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
Pb-free and RoHS-compliant
IM3 (dBc), ACPR (dBc)
Efficiency
IM3
25
20
15
10
-35
-40
-45
-50
-55
34
36
38
Drain Efficiency (%)
•
•
•
•
•
ACPR
5
0
40
42
44
46
48
Average Output Power (dBm)
RF Characteristics
V
DD
= 28 V, I
DQ
= 1.2 A, P
OUT
= 35 W average, ƒ
1
= 2135 MHz, ƒ
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
WCDMA Measurements
(tested in Infineon test fixture)
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
14.5
26
—
Typ
15.5
27.5
–36
Max
—
—
–34
Unit
dB
%
dBc
h
D
IMD
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
V
DD
= 28 V, I
DQ
= 1.2 A, P
OUT
= 150 W average, ƒ = 2170 MHz
CW Measurements
(tested in Infineon test fixture)
Characteristic
Gain Compression
Symbol
G
comp
Min
—
Typ
0.5
Max
1.0
Unit
dB
V
DD
= 28 V, I
DQ
= 1.2 A, P
OUT
= 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Two-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
Characteristic
Gain
Symbol
G
ps
Min
—
—
—
Typ
15.5
38.5
–28
Max
—
—
—
Unit
dB
%
dBc
Drain Efficiency
Intermodulation Distortion
h
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1.2 A
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.05
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 150 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–0.5 to +12
200
–40 to +150
0.31
Unit
V
V
°C
°C
°C/W
Data Sheet
2 of 9
Rev. 06, 2011-01-11
PTFA211801E
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFA211801E V5
PTFA211801E V5 R250
Package Outline
H-36260-2
H-36260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Shipping
Tray
Tape & Reel
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA at Various Biases
V
DD
= 28 V,
ƒ
= 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show I
DQ
-30
-35
1.3 A
-40
-45
-50
-55
34
36
38
40
42
44
46
48
1.2 A
1.1 A
30
25
20
15
10
5
V
DD
= 28 V, I
DQ
= 1.2 A, P
O UT
= 45.0 dBm CW
Broadband Performance
-5
Efficiency
Return Loss
Gain (dB), Efficiency (%)
3rd Order IMD (dBc)
1.4 A
-15
-20
-25
-30
Gain
2070
2090
2110
2130
2150
2170
2190
2210
Output Power, Avg. (dBm)
Frequency (MHz)
Data Sheet
3 of 9
Rev. 06, 2011-01-11
Input Return Loss (dB)
-10
PTFA211801E
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
V
DD
= 28 V, I
DQ
= 1.2 A, ƒ = 2170 MHz
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1.2 A, ƒ = 2170 MHz
Power Sweep, CW Conditions
17
Drain Efficiency (%)
16
T
CA S E
= 25°C
T
CA S E
= 90°C
Gain
Efficiency
60
18
17
Efficiency
Gain
60
50
40
30
20
10
0
47
16
Gain (dB)
Gain (dB)
15
34
15
14
13
12
0
20
40
60
80
100 120 140 160 180
14
21
13
0
20
40
60
80
100 120 140 160 180
8
Output Power (W)
Output Power (W)
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V I
DQ
= 1.2 A,
ƒ
= 2140 MHz,
P
O UT
= 51 dBm PEP
V
DD
= 28 V, I
DQ
= 1.2 A,
ƒ
= 2140 MHz, tone spacing = 1 MHz
-20
45
Two-tone Drive-up
-20
Intermodulation Distortion (dBc)
Intermodulation Distortion (dBc)
-25
-30
-35
-40
-45
-50
-55
0
5
-25
-30
-35
-40
-45
-50
-55
-60
-65
38
42
IM5
IM3
30
25
20
15
5th
7th
IM7
10
5
0
54
10
15
20
25
30
35
40
46
50
Tone Spacing (MHz)
Output Power, PEP (dBm)
Data Sheet
4 of 9
Rev. 06, 2011-01-11
Drain Efficiency (%)
3rd Order
Efficiency
40
35
PTFA211801E
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
V
DD
= 28 V, I
DQ
= 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
Single-carrier WCDMA Drive-up
Voltage Sweep
I
DQ
= 1.2 A,
ƒ
= 2140 MHz, P
O UT
= 51 dBm PEP,
tone spacing = 1 MHz
-10
45
Adjacent Channel Power Ratio (dB)
-30
35
30
25
20
15
10
Drain Efficiency (%), Gain (dB)
-15
-35
Gain
ACPR Low
3rd Order IMD (dBc)
-20
-25
-30
-35
-40
-45
Efficiency
IM3 Up
40
35
30
25
20
-40
Gain (dB), Drain Efficiency (%)
Efficiency
0.
4
0
0. 7
-45
ACPR Up
-50
34
36
38
40
42
44
46
5
0
Gain
30
31
0.
4
15
0.
ga211801ef Apr. 5, 2005
25
3:16:59
28 29
PM
48
23 24
26 27
10
32
33
Average Output Power (dBm)
a211801ef
Nornalized to 50 Ohms
--->
Supply Voltage (V)
0.
0
5
D
RD
G
E
NE
RA
T
OR
0.2
Z Source
Z Load
-
W
AV
E
LE
NGTH
S T
OW
A
G
S
Z Load
0.1
2210 MHz
2070 MHz
0
.0
0.1
0.2
0.3
0.4
D
L
OA
D
-
S
T
OW
AR
NGT
H
Frequency
MHz
2070
2110
2140
2170
2210
R
7.2
7.8
8.4
9.1
Z Source
W
jX
–0.5
–0.2
–0.0
0.0
–0.2
R
Z Load
W
jX
2.3
2.6
2.8
3.0
3.4
1.5
1.4
1.4
1.4
1.3
2070 MHz
2210 MHz
0.1
10.0
<---
EL
E
W
AV
0.
2
Data Sheet
5 of 9
05
0. 3
Rev. 06, 2011-01-11
0.
45
0.
0.
4
0.5
0.
3
Broadband Circuit Impedance
0.
45
Z
0
= 50
W
Z Source
5
0. 6
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