JANS 2N7389U
Qualified Levels:
JANSR and JANSF
Compliant
Radiation Hardened P-Channel MOSFET
Qualified per MIL-PRF-19500/630
DESCRIPTION
Microsemi’s first generation Rad- Hard MOSFET’s are designed for Space and Military
applications. The devices have been characterized for Total Dose (TID) and Single Event
environments (SEE). These products may be used for satellite Power Supplies, Motor
Controls and any miscellaneous power applications needed for Space. Microsemi’s Rad- hard
MOSFET’s are qualified to MIL-PRF- 19500 slash sheet specifications. The 2N7389 is
qualified to meet Slash Sheet /630 of MIL-PRF-19500.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
JEDEC registered 2N7389 number
Hermetically sealed package
Internal metallurgical bonds
RHA level JANS qualifications available per MIL-PRF-19500/630.
(See
part nomenclature
for all available options.)
RoHS compliant
U-18 LCC
Package
Also available in:
TO-205AF (TO-39)
Package
(leaded top-hat)
JANS 2N7389
APPLICATIONS / BENEFITS
•
•
•
Low profile surface mount for crowded areas
Lightweight package
Military and other high-reliability rad-hard applications
MAXIMUM RATINGS
@ T
C
= +25 ºC unless otherwise stated
Parameters / Test Conditions
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case (see
Figure 4)
Total Power Dissipation
@ T
A
= +25 °C
@ T
C
= +25 °C
Gate-Source Voltage, dc
(2) (3)
Drain Current, dc @ T
C
= +25 ºC
(2) (3)
Drain Current, dc @ T
C
= +100 ºC
(4)
Off-State Current (Peak Total Value)
Source Current
NOTES:
Symbol
T
J
& T
stg
R
ӨJC
(1)
Value
-55 to +150
5
0.8
25
± 20
-6.5
-4.1
-26
-6.5
Unit
o
°C
C/W
W
V
A
A
A
A
P
T
V
GS
I
D1
I
D2
I
DM
I
S
1. Derated linearly 0.2 W/ºC for T
C
> +25 ºC
2. The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal
wires and may also be limited by pin diameter
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
3. See
Figure 3
for maximum drain current graphs
4. I
DM
= 4 X I
D1
as calculated in note (2)
T4-LDS-0126-1, Rev. 1 (7/26/13)
©2013 Microsemi Corporation
Page 1 of 8
JANS 2N7389U
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Ceramic LCC-18 with kovar gold plated lid
TERMINALS: Gold plating over nickel
MARKING: Manufacturer’s ID, part number, date code, ESD symbol at pin 1 location
TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities
See
Package Dimensions
on last page.
PART NOMENCLATURE
JANSR
Reliability Level
JANSR = 100K Rads (Si)
JANSF = 300K Rads (Si)
2N7389
U
Surface Mount package
JEDEC type number
(see
Electrical Characteristics
table)
Symbol
di/dt
I
D
I
DSS
I
F
I
GSS
I
S
r
DS(on)
R
G
V
(BR)DSS
V
DD
V
DG
V
DS
V
DS(on)
V
GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Drain Current, dc: The direct current into the drain terminal.
Zero-Gate-Voltage Drain Current: The direct current into the gate terminal when the gate-source voltage is zero.
Forward Current: The current flowing from the p-type region to the n-type region.
Reverse-Gate Current, Drain Short-Circuited to Source: The direct current into the gate terminal with a forward gate
source voltage applied (I
GSSF
) or reverse gate source voltage applied (I
GSSF
) and the drain terminal short-circuited to
the source terminal.
Source Current, dc: The direct current into the source terminal.
Static Drain-Source On-State Resistance: The dc resistance between the drain and source terminals with a specified
gate-source voltage applied to bias the device to the on state.
Gate Drive Impedance or Gate Resistance.
Drain-Source Breakdown Voltage: Gate short-circuited to the source terminal.
Drain-Supply Voltage, dc: The dc supply voltage applied to a circuit connected to the drain terminal.
Drain-Gate Voltage, dc: The dc voltage between the drain and gate terminals.
Drain-Source Voltage, dc: The dc voltage between the drain terminal and the source terminal.
Drain-Source On-State Voltage: The voltage between the drain and source terminals with a specified forward gate-
source voltage supplied to bias the device to the on-state.
Gate-Source Voltage, dc: The dc voltage between the gate terminal and the source terminal.
T4-LDS-0126-1, Rev. 1 (7/26/13)
©2013 Microsemi Corporation
Page 2 of 8
JANS 2N7389U
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
PRE-IRRADIATION CHARACTERISTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -1.0 mA
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= -1 mA
V
DS
≥ V
GS
, I
D
= -1 mA, T
J
= +125°C
V
DS
≥ V
GS
, I
D
= -1 mA, T
J
= -55°C
Gate Current
V
GS
= ± 20 V, V
DS
= 0 V
V
GS
= ± 20 V, V
DS
= 0 V, T
J
= +125°C
Drain Current
V
GS
= 0 V, V
DS
= -80 V
Drain Current
V
GS
= 0 V, V
DS
= -80 V, T
J
= +125 °C
Static Drain-Source On-State Resistance
V
GS
= -12 V, I
D
= -4.1 A pulsed
Static Drain-Source On-State Resistance
V
GS
= -12 V, I
D
= -6.5 A pulsed
Static Drain-Source On-State Resistance
T
J
= +125°C
V
GS
= -12 V, I
D
= -4.1 A pulsed
Diode Forward Voltage
V
GS
= 0 V, I
D
= -6.5 A pulsed
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V
GS
= -12 V, I
D
= -6.5 A, V
DS
= -50 V
Gate to Source Charge
V
GS
= -12 V, I
D
= -6.5 A, V
DS
= -50 V
Gate to Drain Charge
V
GS
= -12 V, I
D
= -6.5 A, V
DS
= -50 V
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I
D
= -6.5 A, V
GS
= -12 V, R
G
= 7.5
Ω,
V
DD
= -50 V
Rise time
I
D
= -6.5 A, V
GS
= -12 V, R
G
= 7.5
Ω,
V
DD
= -50 V
Turn-off delay time
I
D
= -6.5 A, V
GS
= -12 V, R
G
= 7.5
Ω,
V
DD
= -50 V
Fall time
I
D
= -6.5 A, V
GS
= -12 V, R
G
= 7.5
Ω,
V
DD
= -50 V
Diode Reverse Recovery Time
di/dt ≤ -100 A/µs, V
DD
≤ -50 V, I
F
= -6.5 A
V
(BR)DSS
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
I
DSS1
I
DSS2
r
DS(on)1
r
DS(on)2
-100
-2.0
-1.0
-4.0
-5.0
±100
±200
-25
-0.25
0.30
0.35
nA
V
V
Symbol
Min.
Max.
Unit
µA
mA
Ω
Ω
r
DS(on)3
V
SD
0.54
-3.0
Ω
V
Symbol
Min.
Max.
Unit
Q
g(on)
Q
gs
Q
gd
45
10
25
nC
nC
nC
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
rr
Min.
Max.
30
50
70
70
250
Unit
ns
ns
ns
ns
ns
T4-LDS-0126-1, Rev. 1 (7/26/13)
©2013 Microsemi Corporation
Page 3 of 8
JANS 2N7389U
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
(1)
POST-IRRADIATION
Parameters / Test Conditions
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -1 mA
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= -1.0 mA JANSR
V
DS
≥ V
GS
, I
D
= -1.0 mA JANSF
Gate Current
V
GS
= ±20 V, V
DS
= 0 V
Drain Current
V
GS
= 0 V, V
DS
= -80 V of V
DS
(pre-irradiated)
Static Drain-Source On-State Voltage
V
GS
= -12 V, I
D
= -4.1 pulsed
Diode Forward Voltage
V
GS
= 0 V, I
D
= -6.5 pulsed
Symbol
V
(BR)DSS
V
GS(th)1
V
GS(th)1
I
GSS1
I
DSS1
r
DS(on)
V
SD
Min.
-100
-2.0
-2.0
Max.
Unit
V
-4.0
-5.0
±100
-25
1.23
-3.0
V
nA
µA
V
V
NOTE:
1. Post-irradiation electrical characteristics apply to devices subjected to steady state total dose irradiation
testing in accordance with MIL-STD-750, method 1019. Separate samples are tested for V
GS
bias (12V),
and V
DS
bias (80V) conditions.
SAFE OPERATING AREA
I
D1
Drain-to-Source Current (A)
V
DS
, Drain-to-Source Voltage (V)
FIGURE 1
T4-LDS-0126-1, Rev. 1 (7/26/13)
©2013 Microsemi Corporation
Page 4 of 8
JANS 2N7389U
GRAPHS
SEE (Single Event Effect) Typical Response:
Heavy Ion testing of the 2N7389U device has been characterized at the Texas A&M cyclotron. The following SEE curve has
been established using the elements, LET, range, and Total Energy conditions as shown:
FIGURE 2
V
DS
, Drain Source Voltage, V
V
GS
, Gate Source Voltage, V
It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons to
other datasets should not be based on LET alone. Please consult factory for more information.
I
D
Drain Current (Amperes)
T
C
Case Temperature (°C)
FIGURE 3
Maximum Drain Current vs Case Temperature
T4-LDS-0126-1, Rev. 1 (7/26/13)
©2013 Microsemi Corporation
Page 5 of 8
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