IRG5K50P5K50PM06E
IRG7T150CH12B
V
CES
= 1200V
I
C
= 150A at T
C
= 80°C
t
SC
≥ 10µsec
V
CE(ON)
= 1.90V at I
C
= 150A
High-Side Chopper IGBT with Low-Side Diode
POWIR 62
™
Package
Applications：
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Features
Low V
CE(ON)
and Switching Losses
RBSOA Tested
10µsec Short Circuit Safe Operating Area
POWIR 62
™
Package
Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
IRG7T150CH12B
Package Type
POWIR 62
™
Standard Pack
Box
Quantity
45
Orderable Part Number
IRG7T150CH12B
Absolute Maximum Ratings of IGBT
V
CES
V
GES
I
C
I
CM
P
D
T
J
T
JOP
T
stg
Collector to Emitter Voltage
Continuous Gate to Emitter Voltage
Continuous Collector Current
Pulse Collector Current
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
T
C
= 80°C
T
C
= 25°C
T
J
= 175°C
T
C
= 25°C, T
J
= 175°C
1200
±20
150
300
300
910
175
-40 to +150
-40 to +125
V
V
A
A
A
W
°C
°C
°C
1
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IRG5K50P5K50PM06E
IRG7T150CH12B
Electrical Characteristics of IGBT at T
J
= 25°C (Unless Otherwise Specified)
Parameter
V
(BR)CES
V
GE(th)
V
CE(ON)
I
CES
I
GES
R
Gint
Collector to Emitter Breakdown
Voltage
Gate Threshold Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
Internal Gate Resistance
1.25
Min.
1200
5.0
5.8
1.90
2.20
2
400
6.5
2.20
Typ.
Max.
Unit
V
V
V
V
mA
nA
Ω
Test Conditions
V
GE
= 0V, I
C
= 2mA
I
C
= 7mA, V
CE
= V
GE
T
J
= 25°C
T
J
= 125°C
I
C
= 150A,
V
GE
= 15V
V
GE
= 0V, V
CE
= V
CES
V
GE
= ±20V, V
CE
= 0
Switching Characteristics of IGBT
Parameter
t
d(on)
Turn-on Delay Time
Min.
Typ.
235
220
115
120
360
380
160
230
9.1
12.2
7.5
11.5
1230
20.2
1.15
0.75
nF
V
CE
= 25V, V
GE
= 0V,
f
＝1MHz,
T
J
= 25°C
I
C
= 300A,V
CC
= 960V,
V
P
=1200V, R
G
= 15Ω,
V
GE
= +15V to 0V,
T
J
= 150°C
μs
V
CC
= 600V, V
GE
= 15V,
T
J
= 150°C
Max.
Unit
ns
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
CC
=600V,
I
C
= 150A,
R
G
= 6.2Ω,
V
GE
=±15V,
Inductive
Load
t
r
Rise Time
ns
t
d(off)
Turn-off Delay Time
ns
t
f
Fall Time
ns
E
on
Turn-on Switching Loss
mJ
E
off
Q
g
C
ies
C
oes
C
res
Turn-off Switching Loss
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nC
RBSOA
Reverse Bias Safe Operating Area
Trapezoid
SCSOA
Short Circuit Safe Operating Area
10
2
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IRG5K50P5K50PM06E
IRG7T150CH12B
Absolute Maximum Ratings of Freewheeling Diode
V
RRM
I
F
I
FM
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current, T
C
= 25°C
Diode Continuous Forward Current, T
C
= 80°C
Pulse Diode Current
1200
300
150
300
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
V
F
Forward Voltage
Typ.
2.20
2.40
75
110
7.1
13.0
3.0
5.6
Max.
2.70
Unit
V
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
＝150A,
di/dt=1560A/μs,
V
rr
= 600V,
V
GE
= -15V
I
F
= 150A ,
V
GE
= 0V
I
rr
Peak Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
µC
E
rec
Reverse Recovery Energy
mJ
Absolute Maximum Ratings of Brake-Chopper Diode
V
RRM
I
F
I
FM
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current, T
C
= 25°C
Diode Continuous Forward Current, T
C
= 80°C
Pulse Diode Current
1200
300
150
300
V
A
A
Electrical and Switching Characteristics of Brake-Chopper Diode
Parameter
V
F
Forward Voltage
Typ.
2.20
2.40
75
110
7.1
13.0
3.0
5.6
Max.
2.70
Unit
V
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
＝150A,
di/dt=1560A/μs,
V
rr
= 600V,
V
GE
= -15V
I
F
= 150A ,
V
GE
= 0V
I
rr
Peak Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
µC
E
rec
Reverse Recovery Energy
mJ
3
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IRG5K50P5K50PM06E
IRG7T150CH12B
Module Characteristics
Parameter
V
iso
R
θJC
R
θJC
R
θJC
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
Junction-to-Case (IGBT)
Junction-to-Case (Freewheeling Diode)
Junction-to-Case
(Brake-Chopper Diode)
Case-To-Sink
(Conductive Grease Applied)
Power Terminals Screw: M6
Mounting Screw: M6
Weight
3.0
4.0
230
0.165
0.280
0.280
Min.
Typ.
Max.
2500
Unit
V
°C/W
°C/W
°C/W
R
θCS
M
M
G
0.1
5.0
6.0
°C/W
N·m
N·m
g
4
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IRG5K50P5K50PM06E
IRG7T150CH12B
300
270
240
210
180
VGE =15V
TJ =125°C
TJ =25°C
300
270
240
210
180
TJ =125°C
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE =9V
IC (A)
120
90
60
30
0
0.0
0.4
0.8
1.2
1.6
2.0
VCE (V)
2.4
2.8
3.2
3.6
IC (A)
150
150
120
90
60
30
0
0.0
0.4
0.8
1.2
1.6
2.0
VCE (V)
2.4
2.8
3.2
3.6
Fig.1 Typical IGBT Saturation Characteristics
Fig.2 Typical IGBT Output Characteristics
300
270
240
210
180
VGE =0V
TJ =125°C
TJ =25°C
60
50
40
VGE =0V,f =1MHz
Cies
Coes
IF (A)
150
120
90
60
30
0
0.0
0.4
0.8
1.2
1.6
2.0
VF (V)
2.4
2.8
3.2
3.6
C (nF)
30
20
10
0
0
5
10
VCE (V)
15
20
25
Fig.3 Typical Forward Characteristics,
Freewheeling Diode
28
24
20
16
12
8
4
0
VCC =600V,VGE =+/-15V,
Rg =6.2 ohm,TJ =125°C
Eoff
Eon
Fig. 4 Typical Capacitance Characteristics
40
VCC =600V,VGE =+/-15V,
IC =150A,TJ =125°C
30
Eoff
Eon
Erec
E (mJ)
E (mJ)
Erec
20
10
0
30
60
90
120
150 180
IC (A)
210
240
270
300
0
0
5
10
15
Rg (
)
20
25
30
Fig.5 Typical Switching Loss vs. Collector Current
Fig.6 Typical Switching Loss vs. Gate Resistance
5
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October 1, 2014
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