IRG5K50P5K50PM06E
IRG5K50FF06E
V
CES
= 600V
I
C
= 50A at T
C
= 80⁰C
t
SC
≥ 10µsec
V
CE(ON)
= 1.80V at I
C
= 50A
IGBT Six-Pack
POWIR ECO 2
™
Package
Applications：
Industrial Motor Drive
Servo drive
Uninterruptible Power Supply
AC Inverter Drive
Features
Low V
CE(ON)
and Switching Losses
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
POWIR ECO 2
™
Package
Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
IRG5K50FF06E
Package Type
POWIR ECO 2
™
Standard Pack
Box
Quantity
80
Orderable Part Number
IRG5K50FF06E
Absolute Maximum Ratings of IGBT
V
CES
V
GES
I
C
I
CM
P
D
T
J
T
JOP
T
stg
Collector to Emitter Voltage
Continuous Gate to Emitter Voltage
Continuous Collector Current
Pulse Collector Current
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
T
C
= 80°C
T
C
= 25°C
T
J
= 150°C
T
C
= 25°C, T
J
= 150°C
600
±20
50
100
100
245
150
-40 to +150
-40 to +125
V
V
A
A
A
W
°C
°C
°C
1
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IRG5K50P5K50PM06E
IRG5K50FF06E
Electrical Characteristics of IGBT at T
J
= 25°C (Unless Otherwise Specified)
Parameter
V
(BR)CES
V
GE(th)
V
CE(ON)
I
CES
I
GES
Collector to Emitter Breakdown
Voltage
Gate Threshold Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
Min.
600
3.5
4.5
1.80
2.00
1
400
5.5
2.10
Typ.
Max.
Unit
V
V
V
V
mA
nA
Test Conditions
V
GE
= 0V, I
C
= 1mA
I
C
= 0.25mA, V
CE
= V
GE
T
J
= 25°C
T
J
= 125°C
I
C
= 50A,
V
GE
= 15V
V
GE
= 0V, V
CE
= V
CES
V
GE
= ±20V, V
CE
= 0
Switching Characteristics of IGBT
Parameter
t
d(on)
Turn-on Delay Time
Min.
Typ.
110
100
75
80
220
240
90
110
0.68
0.78
0.75
0.92
260
3.0
0.35
0.14
nF
V
CE
= 25V, V
GE
= 0V,
f
＝1MHz,
T
J
= 25°C
Max.
Unit
ns
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
CC
=300V,
I
C
= 50A,
R
G
= 30Ω,
V
GE
=±15V,
Inductive
Load
t
r
Rise Time
ns
t
d(off)
Turn-off Delay Time
ns
t
f
Fall Time
ns
E
on
Turn-on Switching Loss
mJ
E
off
Q
g
C
ies
C
oes
C
res
Turn-off Switching Loss
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nC
RBSOA
Reverse Bias Safe Operating Area
Trapezoid
I
C
= 100A,V
CC
= 480V,
V
P
=600V, R
G
= 15Ω,
V
GE
= +15V to 0V,
T
J
= 150°C
μs
V
CC
= 300V, V
GE
= 15V,
T
J
= 150°C
SCSOA
Short Circuit Safe Operating Area
10
2
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September 2, 2014
IRG5K50P5K50PM06E
IRG5K50FF06E
Absolute Maximum Ratings of Freewheeling Diode
V
RRM
I
F
I
FM
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current, T
C
= 25°C
Diode Continuous Forward Current, T
C
= 80°C
Pulse Diode Current
600
100
50
100
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
V
F
Forward Voltage
Typ.
1.40
1.40
30
40
2.4
3.6
0.25
0.70
Max.
1.70
Unit
V
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
＝50A,
di/dt=840A/μs,
V
rr
= 300V,
V
GE
= -15V
I
F
= 50A ,
V
GE
= 0V
I
rr
Peak Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
µC
E
rec
Reverse Recovery Energy
mJ
NTC-Thermistor Characteristic Values
Parameter
R
25
R/R
P
25
B
25/50
B
25/80
T
C
=25°C
T
C
=100°C，R
100
=481Ω
T
C
=25°C
R
2
=R
25
exp[B
25/50
(1/T
2
-1/(298.15K))]
R
2
=R
25
exp[B
25/80
(1/T
2
-1/(298.15K))]
50
3380
3440
Typ.
5
±5
Max.
Unit
kΩ
%
mW
K
K
Module Characteristics
Parameter
V
iso
R
θJC
R
θJC
R
θCS
M
G
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
Case-To-Sink
(Conductive Grease Applied)
Mounting Screw: M6
Weight
4.0
200
0.515
1.41
0.10
6.0
Min.
Typ.
Max.
2500
Unit
V
°C/W
°C/W
°C/W
N·m
g
3
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September 2, 2014
IRG5K50P5K50PM06E
IRG5K50FF06E
100
90
80
70
60
VGE =15V
TJ =125
°
C
TJ =25
°
C
100
90
80
70
60
TJ =125°C
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE =9V
IC (A)
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
VCE (V)
2.0
2.4
2.8
3.2
IC (A)
50
50
40
30
20
10
0
0.0
0.6
1.2
1.8
VCE (V)
2.4
3.0
3.6
Fig.1 Typical IGBT Saturation Characteristics
Fig.2 Typical IGBT Output Characteristics
100
90
80
70
60
VGE =0V
TJ =125°C
TJ =25°C
6
VCE= 0 V,f=1MHz
Cies
4
Coes
IF (A)
50
40
30
20
10
0
0.0
0.3
0.6
0.9
VF (V)
1.2
1.5
1.8
C (nF)
2
0
0
5
10
VCE (V)
15
20
25
Fig.3 Typical Freewheeling Diode Characteristics
Fig. 4 Typical Capacitance Characteristics
2.5
VCC =300V,VGE
=+/-15V,
Rg =30 ohm,TJ
=125°C
Eoff
Eon
2.0
VCC
=300V,VGE =+/-15V,
IC
=50A,TJ =125°C
1.5
Eoff
Eon
Erec
1.0
2.0
1.5
E (mJ)
1.0
E (mJ)
30
40
50
60
IC (A)
70
80
90
100
Erec
0.5
0.5
0.0
0
10
20
0.0
0
5
10
15
20
25
30
Rg (
)
35
40
45
50
Fig.5 Typical Switching Loss vs. Collector Current
Fig.6 Typical Switching Loss vs. Gate Resistance
4
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September 2, 2014
IRG5K50P5K50PM06E
IRG5K50FF06E
90
80
70
Load Current (A)
Duty Cycle:50%
TJ =125°C
TC =80°C
Rg=30 ohm,VGE =15V
100
80
60
50
40
30
20
10
0
1
Diode as specified
Vcc
IC (A)
I
Square Wave:
60
40
20
Module
Chip
0
100
200
300
400
VCES (V)
500
600
10
Frequency(KHz)
100
0
Fig.7 Typical Load Current vs. Frequency
0.6
0.5
0.4
ZthJC:IGBT
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
1.8
1.5
1.2
ZthJC:Diode
ZthJC
(
K/W
)
0.3
0.2
0.1
0.0
0.001
ZthJC
(
K/W
)
0.01
0.1
1
2
0.9
0.6
0.3
0.0
0.001
t
(
s
)
0.01
t
(
s
)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
20
18
16
14
Rtyp
R
(
Kohm
)
12
10
8
6
4
2
0
0
10
20
30
40
50
60 70
TC (°C)
80
90 100 110 120
Fig. 11
NTC Temperature Characteristics
5
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September 2, 2014
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