IRG5K50P5K50PM06E
IRG5K200HF12B
V
CES
= 1200V
I
C
= 200A at T
C
= 80°C
t
SC
≥ 10µsec
V
CE(ON)
= 2.30V at I
C
= 200A
IGBT Half-Bridge
POWIR
62mm Package
Applications：
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
Features
Low V
CE(ON)
and Switching Losses
RBSOA Tested
10µsec Short Circuit Safe Operating Area
POWIR 62mm Package
Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
IRG5K200HF12B
Package Type
POWIR 62mm
Standard Pack
Box
Quantity
45
Orderable Part Number
IRG5K200HF12B
Absolute Maximum Ratings of IGBT
V
CES
V
GES
I
C
I
CM
P
D
T
J
T
JOP
T
stg
Collector to Emitter Voltage
Continuous Gate to Emitter Voltage
Continuous Collector Current
Pulse Collector Current
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
T
C
= 80°C
T
C
= 25°C
T
J
= 150°C
T
C
= 25°C, T
J
= 150°C
1200
±20
200
400
400
1250
150
-40 to +150
-40 to +125
V
V
A
A
A
W
°C
°C
°C
1
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IRG5K50P5K50PM06E
IRG5K200HF12B
Electrical Characteristics of IGBT at T
J
= 25°C (Unless Otherwise Specified)
Parameter
V
(BR)CES
V
GE(th)
V
CE(ON)
I
CES
I
GES
R
Gint
Collector to Emitter Breakdown
Voltage
Gate Threshold Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
Internal Gate Resistance
1.25
Min.
1200
4.5
5.3
2.30
2.60
2
400
6.0
2.60
Typ.
Max.
Unit
V
V
V
V
mA
nA
Ω
Test Conditions
V
GE
= 0V, I
C
= 2mA
I
C
= 1 mA, V
CE
= V
GE
T
J
= 25°C
T
J
= 125°C
I
C
= 200A,
V
GE
= 15V
V
GE
= 0V, V
CE
= V
CES
V
GE
= ±20V, V
CE
= 0
Switching Characteristics of IGBT
Parameter
t
d(on)
Turn-on Delay Time
Min.
Typ.
280
260
185
185
850
900
115
125
20.0
28.4
16.9
21.1
2370
26.0
1.80
0.72
nF
V
CE
= 25V, V
GE
= 0V,
f
＝1MHz,
T
J
= 25°C
Max.
Unit
ns
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
CC
=600V,
I
C
= 200A,
R
G
= 10Ω,
V
GE
=±15V,
Inductive
Load
t
r
Rise Time
ns
t
d(off)
Turn-off Delay Time
ns
t
f
Fall Time
ns
E
on
Turn-on Switching Loss
mJ
E
off
Q
g
C
ies
C
oes
C
res
Turn-off Switching Loss
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nC
RBSOA
Reverse Bias Safe Operating Area
Trapezoid
I
C
= 400A,V
CC
= 960V,
V
P
=1200V, R
G
= 15Ω,
V
GE
= +15V to 0V,
T
J
= 150°C
μs
V
CC
= 600V, V
GE
= 15V,
T
J
= 150°C
SCSOA
Short Circuit Safe Operating Area
10
2
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May 12, 2014
IRG5K50P5K50PM06E
IRG5K200HF12B
Absolute Maximum Ratings of Freewheeling Diode
V
RRM
I
F
I
FM
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current, T
C
= 25°C
Diode Continuous Forward Current, T
C
= 80°C
Pulse Diode Current
1200
400
200
400
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
V
F
Forward Voltage
Typ.
2.00
2.20
90
130
9.7
22.5
3.8
8.7
Max.
2.70
Unit
V
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
＝200A,
di/dt=1290A/μs,
V
rr
= 600V,
V
GE
= -15V
I
F
= 200A ,
V
GE
= 0V
I
rr
Peak Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
µC
E
rec
Reverse Recovery Energy
mJ
Module Characteristics
Parameter
V
iso
R
θJC
R
θJC
R
θCS
M
M
G
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
Case-To-Sink
(Conductive Grease Applied)
Power Terminals Screw: M6
Mounting Screw: M6
Weight
3.0
4.0
230
0.100
0.204
0.1
5.0
6.0
Min.
Typ.
Max.
2500
Unit
V
°C/W
°C/W
°C/W
N·m
N·m
g
3
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May 12, 2014
IRG5K50P5K50PM06E
IRG5K200HF12B
400
360
320
280
240
VGE =15V
TJ =125°C
TJ =25°C
400
360
320
280
240
TJ =125°C
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE =9V
IC (A)
200
160
120
80
40
0
0.0
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
IC (A)
200
160
120
80
40
0
0.0
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
4.8
Fig.1 Typical IGBT Saturation Characteristics
Fig.2 Typical IGBT Output Characteristics
400
360
320
280
240
VGE =0V
TJ =125°C
TJ =25°C
40
35
30
25
VGE =0V,f =1MHz
Cies
Coes
IF (A)
200
160
120
80
40
0
0.0
0.4
0.8
1.2
1.6
VF (V)
2.0
2.4
2.8
3.2
C (nF)
20
15
10
5
0
0
5
10
VCE (V)
15
20
25
Fig.3 Typical Freewheeling Diode Characteristics
Fig. 4 Typical Capacitance Characteristics
70
60
50
VCC =600V,VGE =+/-15V,
Rg =10 ohm,TJ =125°C
Eoff
Eon
E (mJ)
70
60
50
40
30
20
10
0
VCC =600V,VGE =+/-15V,
IC =200A,TJ =125°C
Eoff
Eon
Erec
E (mJ)
40
30
20
10
0
Erec
0
40
80
120
160
200 240
IC (A)
280
320
360
400
0
5
10
15
Rg (
)
20
25
30
Fig.5 Typical Switching Loss vs. Collector Current
Fig.6 Typical Switching Loss vs. Gate Resistance
4
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May 12, 2014
IRG5K50P5K50PM06E
IRG5K200HF12B
280
240
200
Load Current (A)
Duty Cycle:50%
TJ =125°C
TC =80°C
Rg =15 ohm,VGE =15V
Square Wave:
400
300
120
80
40
0
Vcc
I
IC (A)
160
200
100
Diode as specified
Module
Chip
100
1
10
Frequency (KHz)
0
0
200
400
600
800
VCES (V)
1000
1200
Fig.7 Typical Load Current vs. Frequency
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.12
ZthJC:IGBT
0.25
ZthJC:Diode
0.20
0.09
ZthJC
(
K/W
)
0.06
ZthJC
(
K/W
)
0.15
0.10
0.03
0.05
0.00
0.001
0.01
t
(
s
)
0.1
1
2
0.00
0.001
0.01
t
(
s
)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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May 12, 2014
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