4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler
April 2007
4N29, 4N30, 4N31, 4N32, 4N33
General Purpose 6-Pin Photodarlington Optocoupler
Features
■
High sensitivity to low input drive current
■
Meets or exceeds all JEDEC Registered
tm
Description
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
Specifications
■
VDE 0884 approval available as a test option
– add option .300. (e.g., 4N29.300)
Applications
■
Low power logic circuits
■
Telecommunications equipment
■
Portable electronics
■
Solid state relays
■
Interfacing coupling systems of different potentials
and impedances
Packages
White Package (-M Suffix)
Schematic
6
1
6
1
ANODE 1
6 BASE
CATHODE 2
6
1
5 COLLECTOR
N/C 3
4 EMITTER
Black Package (No -M Suffix)
6
1
6
1
6
1
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
BV
CEO
BV
CBO
BV
ECO
P
D
I
C
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Continuous Collector Current
All
All
All
All
All
30
30
5
150
2.0
150
V
V
V
mW
mW/°C
mA
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
All
All
All
All
80
3
3.0
150
2.0
mA
V
A
mW
mW/°C
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Non M
M
Non M
M
All
All
-55 to +150
-40 to +150
-55 to +100
-40 to +100
260 for 10 sec
250
3.3
°C
mW
mW/°C
°C
°C
Parameter
Device
Value
Units
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
2
4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
EMITTER
V
F
I
R
C
BV
CEO
BV
CBO
BV
ECO
I
CEO
h
FE
Input Forward Voltage*
Reverse Leakage Current*
Capacitance*
I
F
= 10mA
V
R
= 3.0V
V
F
= 0V, f = 1.0MHz
–
–
–
30
30
5.0
–
–
1.2
0.001
150
60
100
8
1
5000
1.5
100
–
–
–
–
100
–
V
µA
pF
V
V
V
nA
Test Conditions
Min.
Typ.
Max.
Unit
DETECTOR
Collector-Emitter Breakdown Voltage* I
C
= 1.0mA, I
B
= 0
Collector-Base Breakdown Voltage*
Collector-Emitter Dark Current*
DC Current Gain
I
C
= 100µA, I
E
= 0
V
CE
= 10V, Base Open
V
CE
= 5.0V, I
C
= 500µA
Emitter-Collector Breakdown Voltage* I
E
= 100µA, I
B
= 0
Transfer Characteristics
Symbol
Parameter
DC CHARACTERISTICS
I
C(CTR)
Test Conditions
Min.
Typ.
Max.
Unit
Collector Output Current*
(1, 2)
I
F
= 10mA, V
CE
= 10V, I
B
= 0
4N32, 4N33
4N29, 4N30
4N31
50 (500)
10 (100)
5 (50)
I
F
= 8mA, I
C
= 2.0mA
–
–
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V
–
–
–
–
1.0
1.2
5.0
µS
V
–
–
–
–
–
–
mA (%)
V
CE(SAT)
Saturation Voltage*
(2)
4N29, 4N30, 4N32, 4N33
4N31
AC CHARACTERISTICS
t
on
t
off
Turn-on Time
Turn-off Time
4N32, 4N33
4N29, 4N30, 4N31
BW
Bandwidth
(3, 4)
–
–
–
–
–
30
100
40
–
µS
kHz
Isolation Characteristics
Symbol
V
ISO
Characteristic
Input-Output
4N32*
4N33*
Isolation Voltage
(5)
4N29, 4N30, 4N31, 4N32, 4N33
Test Conditions
I
I-O
≤
1µA, Vrms, t = 1min.
VDC
VDC
V
I-O
= 500VDC
V
I-O
= Ø, f = 1MHz
Min.
5300
2500
1500
–
–
Typ.
–
–
–
10
11
0.8
Max.
–
–
–
–
–
Units
Vac(rms)
V
Ω
pF
R
ISO
C
ISO
Isolation Resistance
(5)
Isolation Capacitance
(5)
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(I
C
/I
F
) is the ratio of the detector collector current to the LED input current with V
CE
@ 10V.
2. Pulse test: pulse width = 300µs, duty cycle
≤
2.0% .
4. I
F
adjusted to I
C
= 2.0mA and I
C
= 0.7mA rms.
5. The frequency at which I
C
is 3dB down from the 1kHz value.
6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
3
4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
(Black Package)
1.8
1.8
Fig. 2 LED Forward Voltage vs. Forward Current
(White Package)
1.7
1.7
V
F
- FORWARD VOLTAGE (V)
1.6
V
F
- FORWARD VOLTAGE (V)
1.6
1.5
1.5
1.4
T
A
= -55°C
1.3
T
A
= 25°C
1.4
T
A
= -55°C
1.3
T
A
= 25°C
1.2
T
A
= 100°C
1.2
1.1
T
A
= 100°C
1.1
1.0
1
10
100
1.0
1
10
100
I
F
- LED FORWARD CURRENT (mA)
I
F
- LED FORWARD CURRENT (mA)
Fig.3 Normalized CTR vs. Forward Current
(Black Package)
1.4
V
CE
= 5.0V
T
A
= 25°C
1.2
Normalized to
I
F
= 10 mA
1.6
Fig.4 Normalized CTR vs. Forward Current
(White Package)
V
CE
= 5.0V
T
A
= 25°C
Normalized to
I
F
= 10 mA
1.4
1.2
1.0
NORMALIZED CTR
NORMALIZED CTR
0
5
10
15
20
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0.0
0
2
4
6
8
10
12
14
16
18
20
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
Fig. 5 Normalized CTR vs. Ambient Temperature
(Black Package)
1.6
1.4
Fig. 6 Normalized CTR vs. Ambient Temperature
(White Package)
1.4
I
F
= 5 mA
1.2
I
F
= 5 mA
NORMALIZED CTR
1.2
I
F
= 10 mA
1.0
NORMALIZED CTR
1.0
I
F
= 10 mA
0.8
0.8
0.6
I
F
= 20 mA
0.6
Normalized to
I
F
= 10 mA
T
A
= 25°C
0.4
I
F
= 20 mA
Normalized to
I
F
= 10 mA
T
A
= 25°C
0.4
-75
-50
-25
0
25
50
75
100
125
0.2
-60
-40
-20
0
20
40
60
80
100
T
A
- AMBIENT TEMPERATURE (°C)
T
A
- AMBIENT TEMPERATURE (°C)
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
4
4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves
(Continued)
Fig. 7 CTR vs. RBE (Unsaturated)
(Black Package)
1.0
1.0
Fig. 8 CTR vs. RBE (Unsaturated)
(White Package)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
0.8
I
F
= 10 mA
0.7
I
F
= 5 mA
0.6
0.5
0.4
0.3
0.2
V
CE
= 5.0 V
0.1
0.0
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
0.8
I
F
= 20 mA
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
100
1000
I
F
= 5 mA
I
F
= 10 mA
V
CE
= 5.0 V
I
F
= 20 mA
10
100
1000
R
BE
- BASE RESISTANCE (kΩ)
R
BE
- BASE RESISTANCE (kΩ)
Fig. 9 CTR vs. RBE (Saturated)
(Black Package)
1.0
1.0
Fig. 10 CTR vs. RBE (Saturated)
(White Package)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
V
CE
= 0.3 V
0.8
I
F
= 20 mA
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
100
1000
I
F
= 5 mA
I
F
= 10 mA
0.9
V
CE
= 0.3 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
100
1000
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
R
BE
- BASE RESISTANCE (k
Ω)
R
BE
- BASE RESISTANCE (k
Ω)
Fig. 11 Collector-Emitter Saturation Voltage vs Collector Current
(Black Package)
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
100
Fig. 12 Collector-Emitter Saturation Voltage vs Collector Current
(White Package)
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
100
T
A
= 25˚C
10
10
1
1
I
F
= 2.5 mA
0.1
I
F
= 2.5 mA
0.1
0.01
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
0.01
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
T
A
= 25˚C
0.1
1
10
0.001
0.01
0.001
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
5
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