4N35X, 4N36X, 4N37X,
4N35, 4N36, 4N37,
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
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EN60950 approval pending
DESCRIPTION
The 4N35, 4N36, 4N37 series of optically
coupled isolators consist of infrared light
emitting diode and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio (100% min.)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
2.54
7.0
6.0
1.2
7.62
6.62
Dimensions in mm
1
2
3
6
5
4
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
30V
70V
6V
160mW
60mA
6V
105mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
24/11/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB90046M-AAS/A1
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Collector-base Dark Current (I
CBO
)
Current Transfer Ratio (CTR)
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Turn-on Time
Turn-off Time
Output Rise Time
Output Fall Time
ton
toff
tr
tf
5300
7500
5x10
10
5
5
3.5
4.9
10
10
MIN TYP MAX UNITS
1.2
6
10
30
70
6
50
20
100
0.3
1.5
V
V
µ
A
V
V
V
nA
nA
%
V
V
RMS
V
PK
Ω
µ
s
µ
s
µ
s
µ
s
TEST CONDITION
I
F
= 10mA
I
R
= 10
µ
A
V
R
= 6V
I
C
= 1mA
I
C
= 100
µ
A
I
E
= 100
µ
A
V
CE
= 10V
V
CE
= 10V
10mA I
F
, 10V V
CE
10mA I
F
, 0.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 10V ,
I
C
= 2mA, R
L
= 100
Ω
( FIG 1)
Output
Coupled
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
V
CC
Input
R
L
= 100Ω
Output
Output
10%
t
r
t
f
t
on
t
off
10%
90%
90%
FIG 1
24/11/00
DB90046M-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
50
30
20
15
20
10
0
10
I
F
= 5mA
150
Collector current I
C
(mA)
-30
0
25
50
75
100
125
40
30
100
50
0
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
70
Forward current I
F
(mA)
60
50
40
30
20
10
-30
0
25
50
75
100
125
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
1.4
Relative current transfer ratio
I
F
= 10mA
I
C
= 0.5mA
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Relative current transfer ratio
I
F
= 10mA
V
CE
= 10V
Collector-emitter saturation voltage V
CE(SAT)
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
1
1.0
0.5
V
CE
= 10V
T
A
= 25°C
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
24/11/00
2
5
10
20
50
Forward current I
F
(mA)
DB90046M-AAS/A1
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