DIODE GEN PURP 200V 1A AXIAL
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Microsemi |
零件包装代码 | DO-41 |
包装说明 | SIMILAR TO DO-41, 2 PIN |
针数 | 2 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | METALLURGICALLY BONDED |
外壳连接 | ISOLATED |
配置 | SINGLE |
二极管元件材料 | SILICON |
二极管类型 | RECTIFIER DIODE |
JESD-30 代码 | O-XALF-W2 |
元件数量 | 1 |
端子数量 | 2 |
最大输出电流 | 1 A |
封装主体材料 | UNSPECIFIED |
封装形状 | ROUND |
封装形式 | LONG FORM |
认证状态 | Qualified |
参考标准 | MIL-19500/359F |
最大反向恢复时间 | 0.15 µs |
表面贴装 | NO |
端子形式 | WIRE |
端子位置 | AXIAL |
Base Number Matches | 1 |
JANTXV1N4942 | HRL36100U43X | JAN1N4944 | JAN1N4948 | JAN1N4947 | 1N4944E3 | 1N4942E3 | JANTXV1N4944 | JANTXV1N4946 | |
---|---|---|---|---|---|---|---|---|---|
描述 | DIODE GEN PURP 200V 1A AXIAL | Circuit breaker, PowerPact H, Micrologic 5.2A, 100A, 3 pole, 600V, 100kA | 1 A, 400 V, SILICON, SIGNAL DIODE | 1 A, SILICON, SIGNAL DIODE | 1 A, 800 V, SILICON, SIGNAL DIODE | Rectifier Diode, Blank, 1 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A PACKAGE-2 | Rectifier Diode, Blank, 1 Element, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A PACKAGE-2 | DIODE GEN PURP 400V 1A AXIAL | DIODE GEN PURP 600V 1A AXIAL |
是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 不符合 | 符合 | 符合 | 不符合 | 不符合 |
厂商名称 | Microsemi | - | Microsemi | - | Microsemi | - | - | Microsemi | Microsemi |
零件包装代码 | DO-41 | - | - | DO-41 | DO-41 | - | - | DO-41 | DO-41 |
包装说明 | SIMILAR TO DO-41, 2 PIN | - | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | ROHS COMPLIANT, HERMETIC SEALED, GLASS, A PACKAGE-2 | O-LALF-W2 | SIMILAR TO DO-41, 2 PIN | SIMILAR TO DO-41, 2 PIN |
针数 | 2 | - | - | 2 | 2 | 2 | 2 | 2 | 2 |
Reach Compliance Code | unknown | - | _compli | unknown | unknown | compli | compli | unknown | unknown |
ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | METALLURGICALLY BONDED | - | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | HIGH RELIABILITY | HIGH RELIABILITY | METALLURGICALLY BONDED | METALLURGICALLY BONDED |
外壳连接 | ISOLATED | - | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
配置 | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
二极管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
二极管类型 | RECTIFIER DIODE | - | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JESD-30 代码 | O-XALF-W2 | - | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-LALF-W2 | O-LALF-W2 | O-XALF-W2 | O-XALF-W2 |
元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | - | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
最大输出电流 | 1 A | - | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
封装主体材料 | UNSPECIFIED | - | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | GLASS | GLASS | UNSPECIFIED | UNSPECIFIED |
封装形状 | ROUND | - | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | LONG FORM | - | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
认证状态 | Qualified | - | Qualified | Not Qualified | Not Qualified | - | - | Qualified | Qualified |
参考标准 | MIL-19500/359F | - | MIL-19500 | MIL-19500/359F | MIL-19500/359F | - | - | MIL-19500/359F | MIL-19500/359F |
最大反向恢复时间 | 0.15 µs | - | 0.15 µs | 0.5 µs | 0.25 µs | 0.15 µs | 0.15 µs | 0.15 µs | 0.25 µs |
表面贴装 | NO | - | NO | NO | NO | NO | NO | NO | NO |
端子形式 | WIRE | - | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | AXIAL | - | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
Base Number Matches | 1 | - | - | 1 | 1 | 1 | 1 | - | 1 |
最大重复峰值反向电压 | - | - | 400 V | 1000 V | 800 V | 400 V | 200 V | - | - |
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