1N6138AUS – 1N6173AUS
Voidless Hermetically Sealed Surface Mount
Bidirectional Transient Voltage Suppressors
Qualified to MIL-PRF-19500/516
DESCRIPTION
This surface mount series of industry recognized voidless, hermetically sealed, bidirectional
Transient Voltage Suppressor (TVS) designs are military qualified to MIL-PRF-19500/516 and are
ideal for high-reliability applications where a failure cannot be tolerated. They provide a working
peak “standoff” voltage selection from 5.2 to 152 volts with a 1500 watt rating for a 10/1000 us
pulse. They are very robust in hard-glass construction and use internal Category 1 metallurgical
bonds for high reliability. These are also available as both a non suffix part and an “A” version part
involving different voltage tolerances as further described in the
nomenclature
section. These
devices are also available in axial-leaded packages for thru-hole mounting.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
“C” or SQ-MELF
Package
Also available in:
“C” Package
(axial-leaded)
1N6138 – 1N6173
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
High surge current and peak pulse power provides transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category
1”
metallurgical bonds
Voidless hermetically sealed glass package
JAN, JANTX, JANTXV and JANS qualified versions are available per MIL-PRF-19500/516.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only)
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
•
•
Military and other high-reliability applications
Extremely robust construction
Extensive range in working peak “standoff” voltage (V
WM
) from 5.2 to 152 volts
1500 watt peak pulse power (P
PP
) for a 10/1000 us pulse
ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively
Protection from the secondary effects of lightning per select levels in IEC61000-4-5
Square-end-cap terminals for easy placement
Non-sensitive to ESD per MIL-STD-750 method 1020
Inherently radiation hard as described in Microsemi “MicroNote
050”
MAXIMUM RATINGS
@
T
A
= 25
o
C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-End Cap
Peak Pulse Power @ 25 ºC (10/1000
µs)
o (1)
Off-State Power up to T
EC
= 150 C
o (2)
Off-State Power @ T
A
= 25 C
Impulse Repetition Rate
Solder Temperature @ 10 s
Notes:
1.
2.
Symbol
T
J
and T
STG
R
ӨJEC
P
PP
P
D
P
D
df
T
SP
Value
-55 to +175
5.0
1500
5.0
3.0
0.01
260
Unit
o
C
C/W
W
W
W
%
o
C
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Linearly derate above T
EC
=150
o
C to zero at T
EC
=175
o
C.
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
OP
or T
J(MAX)
is not exceeded (also see
figure 6).
T4-LDS-0278-1, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 1 of 7
1N6138AUS – 1N6173AUS
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed voidless hard glass with tungsten slugs
TERMINALS: Tin/lead plate over copper. RoHS compliant matte-tin is available on commercial grade only.
MARKING: None
POLARITY: No polarity marking for these bidirectional TVSs
TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities.
WEIGHT: Approximately 1100 milligrams
See
package dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level
Blank = commercial
JEDEC type number
See
Electrical Characteristics
table
1N6138
A
US e3
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
Voltage Tolerance
A = Standard
Blank =5% higher V
C
, 5% lower
min. V
(BR)
and 5% lower I
PP
Symbol
α
V(BR)
V
(BR)
V
WM
I
D
V
C
P
PP
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
Standby Current: The current through the device at rated stand-off voltage.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
T4-LDS-0278-1, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 2 of 7
NXP MCU
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