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KSP2222A — NPN General-Purpose Amplifier
November 2014
KSP2222A
NPN
General-Purpose Amplifier
Features
• Collector-Emitter Voltage: V
CEO
= 40 V
• Available as PN2222A
1 2 3
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number
KSP2222ABU
KSP2222ATA
KSP2222ATF
Marking
KSP2222
KSP2222
KSP2222
Package
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Parameter
Value
75
40
6.0
600
150
-55 to +150
Unit
V
V
V
mA
°C
°C
© 2001 Fairchild Semiconductor Corporation
KSP2222A Rev. 1.1.0
www.fairchildsemi.com
KSP2222A — NPN General-Purpose Amplifier
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJC
R
θJA
Derate Above 25°C
Parameter
Power Dissipation by R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
625
5
83.3
200
Unit
mW
mW/°C
°C/W
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Conditions
I
C
= 10
μA,
I
E
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 10
μA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
V
CE
= 10 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 1 mA
Min.
75
40
6.0
Max.
Unit
V
V
V
0.01
10
35
50
75
100
40
0.3
1.0
0.6
1.2
2.0
300
8
35
285
4
300
μA
nA
h
FE
DC Current Gain
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 150 mA
(2)
V
CE
= 10 V, I
C
= 500 mA
(2)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 20 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 1.0 MHz
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA, V
BE(off)
= 0.5 V
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
I
C
= 100
μA,
V
CE
= 10 V,
R
S
= 1 kΩ, f = 1.0 kHz
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
OFF
NF
Collector-Emitter Saturation Voltage
(2)
Base-Emitter Saturation Voltage
(2)
Current Gain Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Noise Figure
V
V
MHz
pF
ns
ns
dB
Note:
2. Pulse test: Pulse width
≤
300
μs,
duty cycle
≤
2%
© 2001 Fairchild Semiconductor Corporation
KSP2222A Rev. 1.1.0
www.fairchildsemi.com
2
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