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MJD44H11 — NPN Epitaxial Silicon Transistor
April 2015
MJD44H11
NPN Epitaxial Silicon Transistor
Features
• General-Purpose Power and Switching such as
Output or Driver Stages in Applications
• D-PAK for Surface-Mount Applications
• Lead-Formed for Surface Mount Application (No Suffix)
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
1
D-PAK
2.Collector
3.Emitter
1.Base
Ordering Information
Part Number
MJD44H11TF
MJD44H11TM
Top Mark
MJD44H11
MJD44H11
Package
TO-252 3L (DPAK)
TO-252 3L (DPAK)
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
EBO
I
C
I
CP
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Junction Temperature
Parameter
Value
80
5
8
16
150
- 65 to +150
Unit
V
V
A
A
°C
°C
Storage Temperature Range
© 2001 Fairchild Semiconductor Corporation
MJD44H11 Rev. 1.2
www.fairchildsemi.com
1
MJD44H11 — NPN Epitaxial Silicon Transistor
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJC
R
θJA
Total Device Dissipation
Parameter
T
C
= 25°C
T
A
= 25°C
Max.
20
1.75
6.25
71.4
Unit
W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
(sus)
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
(1)
Conditions
V
CE
= 80 V, I
B
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 1 V, I
C
= 2 A
V
CE
= 1 V, I
C
= 4 A
I
C
= 8 A, I
B
= 0.8 A
V
CE
= 10 V, I
C
= 0.5 A
V
CB
= 10 V, f = 1 MHz
I
C
= 5 A,
I
B1
= - I
B2
= 0.5 A
Min.
80
Typ.
Max.
10
50
Unit
V
μA
μA
Collector-Emitter Sustaining Voltage
(1)
I
C
= 30 mA, I
B
= 0
60
40
1
1.5
50
130
300
500
140
V
V
MHz
pF
ns
ns
ns
Collector-Emitter Saturation Voltage
(1)
I
C
= 8 A, I
B
= 0.4 A
Base-Emitter Saturation Voltage
(1)
Current Gain Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Note:
1. Pulse test: pulse width
≤
300
μs,
duty cycle
≤
2%.
© 2001 Fairchild Semiconductor Corporation
MJD44H11 Rev. 1.2
www.fairchildsemi.com
2
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