电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CMS03(TE12L,Q,M)

产品描述DIODE SCHOTTKY 30V 3A MFLAT
产品类别分立半导体    二极管   
文件大小287KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

CMS03(TE12L,Q,M)概述

DIODE SCHOTTKY 30V 3A MFLAT

CMS03(TE12L,Q,M)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
包装说明M-FLAT, 2 PIN
Reach Compliance Codeunknown
Factory Lead Time12 weeks
Samacsys DescriptionSchottky Diodes & Rectifiers Diode Schottky 30V, 3A
应用GENERAL PURPOSE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.45 V
JESD-30 代码R-PDSO-F2
最大非重复峰值正向电流40 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压30 V
最大反向电流500 µA
表面贴装YES
技术SCHOTTKY
端子形式FLAT
端子位置DUAL

文档预览

下载PDF文档
CMS03
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CMS03
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Repetitive peak reverse voltage : V
RRM
= 30 V
: I
F (AV)
= 3 A
Average forward current
Peak forward voltage
: V
FM
= 0.45 V (max)
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
30
3 (Note 1)
40 (50 Hz)
−40
to 150
−40
to 150
Unit
V
A
A
°C
°C
Note 1: Tℓ
=
117.6°C
Ta
=
28.4°C
Rectangular waveform (α
=
180°), V
R
=
15 V
Device mounted on a ceramic board
Board size
: 50 mm
×
50 mm
Soldering land size : 2 mm
×
2 mm
Board thickness
: 0.64 mm
JEDEC
JEITA
TOSHIBA
3-4E1A
Note 2: Using continuously under heavy loads (e.g. the application of
Weight: 0.023 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM (1)
I
RRM (2)
C
j
Test Condition
I
FM
=
0.5 A (pulse test)
I
FM
=
1 A (pulse test)
I
FM
=
3 A (pulse test)
V
RRM
=
5 V (pulse test)
V
RRM
=
30 V (pulse test)
V
R
=
10 V, f
=
1 MHz
Device mounted on a ceramic board
board size
: 50 mm
×
50 mm
soldering land size : 2 mm
×
2 mm
board thickness : 0.64 mm
Device mounted on a glass-epoxy board
board size
: 50 mm
×
50 mm
soldering land size : 6 mm
×
6 mm
board thickness : 1.6 mm
Min
Typ.
0.35
0.37
0.42
3
30
190
Max
0.45
500
60
µA
pF
V
Unit
Thermal resistance(junction to ambient)
R
th (j-a)
135
°C/W
Thermal resistance (junction to lead)
R
th (j-ℓ)
16
Start of commercial production
1
2000-07
2018-04-04

CMS03(TE12L,Q,M)相似产品对比

CMS03(TE12L,Q,M) CMS03(TE12L) CMS03(TE12LPPQ) CMS03(TE85L)
描述 DIODE SCHOTTKY 30V 3A MFLAT DIODE SCHOTTKY 30V 3A MFLAT Rectifier Diode Rectifier Diode
厂商名称 Toshiba(东芝) Toshiba(东芝) Toshiba(东芝) Toshiba(东芝)
Reach Compliance Code unknown unknown unknown unknown
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 10  213  1684  167  2216  59  23  33  51  18 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved