74HC153D
CMOS Digital Integrated Circuits Silicon Monolithic
74HC153D
1. Functional Description
•
Dual 4-Channel Multiplexer
2. General
The 74HC153D is high speed CMOS DUAL 4-CHANNEL MULTIPLEXERs fabricated with silicon gate C
2
MOS
technology.
They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
Input data (1C0~1C2, 2C0~2C3) are selected by the two address inputs, A and B.
Separate strobe inputs (1G, 2G) are provided for each of the two four-line sections. They can be used to inhibit
the data outputs. The output is set low, when the strobe inputs are low.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
High speed: t
pd
= 12 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 to 6.0 V
4. Packaging
SOIC16
Start of commercial production
©2016 Toshiba Corporation
1
2016-05
2016-05-26
Rev.2.0
74HC153D
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-05-26
Rev.2.0
74HC153D
8. Truth Table
X:
Don't care
9. System Diagram
©2016 Toshiba Corporation
3
2016-05-26
Rev.2.0
74HC153D
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±25
±50
500
-65 to 150
mW
mA
Unit
V
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
,t
f
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Test Condition
Rating
2.0 to 6.0
0 to V
CC
0 to V
CC
-40 to 85
0 to 1000
0 to 500
0 to 400
ns
Unit
V
Note:
The operating ranges are required to ensure the normal operation of the device. Unused inputs must be tied
to either V
CC
or GND.
©2016 Toshiba Corporation
4
2016-05-26
Rev.2.0
74HC153D
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -20
µA
2.0
4.5
6.0
I
OH
= -4 mA
I
OH
= -5.2 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 20
µA
4.5
6.0
2.0
4.5
6.0
I
OL
= 4 mA
I
OL
= 5.2 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
4.5
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.18
5.68
Typ.
2.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.17
0.18
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.26
0.26
±0.1
4.0
µA
µA
V
V
V
Unit
V
12.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -20
µA
2.0
4.5
6.0
I
OH
= -4 mA
I
OH
= -5.2 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 20
µA
4.5
6.0
2.0
4.5
6.0
I
OL
= 4 mA
I
OL
= 5.2 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
4.5
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.13
5.63
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.33
0.33
±1.0
40.0
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
5
2016-05-26
Rev.2.0
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