74HC74D
CMOS Digital Integrated Circuits Silicon Monolithic
74HC74D
1. Functional Description
•
Dual D-Type Flip-Flop with Preset and Clear
2. General
The 74HC74D is a high speed CMOS D FLIP FLOP fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
The signal level applied to the D INPUT is transferred to Q OUTPUT during the positive going transition of the
CLOCK pulse.
CLEAR and PRESET are independent of the CLOCK and are accomplished by setting the appropriate input to
an "L" level.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
High speed: f
MAX
= 77 MHz (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 2.0
µA
(max) at T
a
= 25
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 to 6.0 V
4. Packaging
SOIC14
Start of commercial production
©2016 Toshiba Corporation
1
2016-04
2016-05-25
Rev.2.0
74HC74D
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
8. Truth Table
X:
Don't care
©2016 Toshiba Corporation
2
2016-05-25
Rev.2.0
74HC74D
9. System Diagram
©2016 Toshiba Corporation
3
2016-05-25
Rev.2.0
74HC74D
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±25
±50
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
,t
f
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Test Condition
Rating
2.0 to 6.0
0 to V
CC
0 to V
CC
-40 to 85
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
ns
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
4
2016-05-25
Rev.2.0
74HC74D
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -20
µA
2.0
4.5
6.0
I
OH
= -4 mA
I
OH
= -5.2 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 20
µA
4.5
6.0
2.0
4.5
6.0
I
OL
= 4 mA
I
OL
= 5.2 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
4.5
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.18
5.68
Typ.
2.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.17
0.18
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.26
0.26
±0.1
2.0
µA
µA
V
V
V
Unit
V
12.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -20
µA
2.0
4.5
6.0
I
OH
= -4 mA
I
OH
= -5.2 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 20
µA
4.5
6.0
2.0
4.5
6.0
I
OL
= 4 mA
I
OL
= 5.2 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
4.5
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.13
5.63
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.33
0.33
±1.0
20.0
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
5
2016-05-25
Rev.2.0
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