d. Maximum under steady state conditions is 100 °C/W
e. T
C
= 25 °C
S17-0342-Rev. A, 06-Mar-17
Document Number: 75339
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4435FDY
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -5 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= -5 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= -15 V, R
L
= 15
,
I
D
-1 A,
V
GEN
= -10 V, R
g
= 1
V
DD
= -15 V, R
L
= 15
,
I
D
-1 A,
V
GEN
= -4.5 V, R
g
= 1
V
DS
= -15 V, V
GS
= -10 V, I
D
= -5 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -5 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -5 A
f = 1 MHz
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= 10 V
V
GS
= -10 V, I
D
= -9 A
V
GS
= -4.5 V, I
D
= -7 A
V
DS
= -10 V, I
D
= -9 A
MIN.
-30
-
-
-1
-
-
-
-10
-
-
-
-
-
-
-
-
-
-
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-25
4.5
-
-
-
-
-
0.015
0.023
25
1500
180
150
28
13.5
4.4
4.3
3.3
26
30
21
16
9
18
23
15
-
-
-0.82
20
10
10
10
MAX.
-
-
-
-2.2
± 100
-1
-10
-
0.019
0.030
-
-
-
-
42
21
-
-
6.6
50
60
40
30
20
35
45
30
-4
-32
-1.2
40
20
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0342-Rev. A, 06-Mar-17
Document Number: 75339
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4435FDY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
40
V
GS
= 10 V thru 5 V
Vishay Siliconix
Axis Title
10000
40
10000
2nd line
I
D
- Drain Current (A)
V
GS
= 4 V
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
30
30
1000
20
1st line
2nd line
100
10
T
C
= 125 °C
T
C
= -55 °C
20
100
10
V
GS
= 3 V
T
C
= 25 °C
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.04
10000
2000
Axis Title
10000
C
iss
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
0.03
1500
1000
1000
100
500
C
oss
C
rss
0.02
100
0.01
V
GS
= 10 V
0
0
10
20
I
D
- Drain Current (A)
2nd line
30
40
10
0
0
10
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 5 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.5
1.4
1.3
1st line
2nd line
100
10
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
1.2
1.1
1.0
0.9
0.8
0.7
1000
V
GS
= 4.5V
I
D
= 9 A
V
GS
= 10 V
10000
8
V
DS
= 15 V
1000
V
DS
= 24 V
V
DS
= 7.5 V
4
100
2
0
0
5
10
15
20
25
30
Q
g
- Total Gate Charge (nC)
2nd line
10
1st line
2nd line
6
Gate Charge
On-Resistance vs. Junction Temperature
S17-0342-Rev. A, 06-Mar-17
Document Number: 75339
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
Si4435FDY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.05
I
D
= 9 A
Vishay Siliconix
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
I
S
- Source Current (A)
0.04
1000
T
J
= 150 °C
10
T
J
= 150 °C
T
J
= 25 °C
1000
1st line
2nd line
0.02
100
0.01
T
J
= 25 °C
1
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
0
2
4
6
8
10
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.2
2.0
2nd line
V
GS(th)
(V)
1.8
1.6
1.4
1.2
1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
I
D
= 250 μA
Axis Title
10000
100
10000
80
1000
2nd line
Power (W)
1st line
2nd line
60
1000
1st line
2nd line
100
20
0.1
1
10
100
10
1000
Time (s)
2nd line
40
100
0
0.0001 0.001 0.01
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
Limited by R
DS(on) (1)
10000
2nd line
I
D
- Drain Current (A)
10
100 μs
1 ms
1000
1st line
2nd line
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single pulse
1s
10 s
DC
100
0.01
0.1
(1)
10
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-0342-Rev. A, 06-Mar-17
Document Number: 75339
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
0.03
Si4435FDY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
15
10000
6
5
1000
1st line
2nd line
9
2nd line
Power (W)
4
3
2
1
10
0
25
50
75
100
125
150
T
F
- Foot Temperature (°C)
2nd line
0
0
25
50
75
100
125
150
T
F
- Foot Temperature (°C)
2nd line
10
100
1000
1st line
2nd line
Axis Title
10000
Vishay Siliconix
12
2nd line
I
D
- Drain Current (A)
6
100
3
0
Current Derating
a
Power, Junction-to-Foot
Note
a. The power dissipation P
D
is based on T
J
max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-0342-Rev. A, 06-Mar-17
Document Number: 75339
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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