74HCT245D
CMOS Digital Integrated Circuits Silicon Monolithic
74HCT245D
1. Functional Description
•
Octal Bus Transceiver
2. General
The 74HCT245D is high speed CMOS OCTAL BUS TRANSCEIVER fabricated with silicon gate C
2
MOS
technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
Its inputs are compatible with TTL, NMOS, and CMOS output voltage levels.
It is intended for two-way asynchronous communication between data busses. The direction of data transmission
is determined by the level of the DIR input.
The enable input (G) can be used to disable the device so that the busses are effectively isolated.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features (Note)
(1)
(2)
(3)
(4)
High speed: t
pd
= 11 ns (typ.) at V
CC
= 5.5 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
Compatible with TTL outputs: V
IL
= 0.8 V(max)
V
IH
= 2.0 V(min)
Wide interfacing ability: LSTTL, NMOS, CMOS
(5) Balanced propagation delays: t
PLH
≈
t
PHL
Note: Do not apply a signal to any bus pins when it is in the output mode. Damage may result.
All floating (high impedance) bus pins must have their input levels fixed by means of pull-up or pull-down
resistors.
4. Packaging
SOIC20
Start of commercial production
©2016 Toshiba Corporation
1
2016-04
2016-08-05
Rev.3.0
74HCT245D
5. Pin Assignment
6. Marking
©2016 Toshiba Corporation
2
2016-08-05
Rev.3.0
74HCT245D
7. IEC Logic Symbol
8. Truth Table
Input G
L
L
H
Input DIR
L
H
X
A Bus
Output
Input
Z
B Bus
Input
Output
Z
Output
A=B
B=A
Z
X:
Z:
Don't care (L or H)
High impedance
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±35
±75
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: P
D
derates linearly with -8 mW/ above 85
©2016 Toshiba Corporation
3
2016-08-05
Rev.3.0
74HCT245D
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
,t
f
Rating
4.5 to 5.5
0 to V
CC
0 to V
CC
-40 to 125
0 to 50
Unit
V
V
V
µs
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply
current
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or 2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -6 mA
I
OL
= 20
µA
I
OL
= 6 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
5.5
Min
2.0
4.4
4.18
Typ.
4.5
4.31
0.0
0.17
0.4
Max
0.8
0.1
0.26
±0.5
±0.1
4.0
1.4
µA
µA
µA
mA
V
Unit
V
V
V
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or 2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -6 mA
I
OL
= 20
µA
I
OL
= 6 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
5.5
Min
2.0
4.4
4.13
Max
0.8
0.1
0.33
±5.0
±1.0
40.0
1.7
µA
µA
µA
mA
V
Unit
V
V
V
©2016 Toshiba Corporation
4
2016-08-05
Rev.3.0
74HCT245D
12. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or 2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -6 mA
I
OL
= 20
µA
I
OL
= 6 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
5.5
Min
2.0
4.4
3.7
Max
0.8
0.1
0.4
±10.0
±1.0
160.0
1.9
Unit
V
V
V
V
V
V
µA
µA
µA
mA
©2016 Toshiba Corporation
5
2016-08-05
Rev.3.0
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