74HC4051D,74HC4052D
CMOS Digital Integrated Circuits Silicon Monolithic
74HC4051D,74HC4052D
1. Functional Description
74HC4051D:8-Channel Analog Multiplexer/Demultiplexer
74HC4052D:Dual 4-Channel Analog Multiplexer/Demultiplexer
2. General
The 74HC4051D, 74HC4052D are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated
with silicon gate C
2
MOS technology. They achieve the high speed operation similar to equivalent LSTTL while
maintaining the CMOS low power dissipation.
The 74HC4051D has an 8 channel configuration and the 74HC4052D has a 4 channel× 2 configuration.
The digital signal to the control terminal turns "ON" the corresponding switch of each channel a large amplitude
signal (V
CC
- V
EE
) can then be switched by the small logical amplitude (V
CC
- GND) control signal.
For example, in the case of V
CC
= 5 V, GND = 0 V, V
EE
= -5 V, signals between -5 V and +5 V can be switched
from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be
connected to circuits with low input impedance.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
Low power dissipation: I
CC
= 4.0
µA
(max) (V
CC
= 6.0 V, V
EE
= GND, T
a
= 25
)
Low ON-resistance: R
ON
= 130
Ω
(typ. V
IN
= V
EE
), 75
Ω
(typ. V
IN
= V
CC
) at V
CC
- V
EE
= 9 V
High noise immunity: THD = 0.02 % (typ.) at V
CC
- V
EE
= 9 V
4. Packaging
SOIC16
Start of commercial production
©2016 Toshiba Corporation
1
2016-04
2016-09-12
Rev.3.0
74HC4051D,74HC4052D
5. Pin Assignment
74HC4051D
74HC4052D
6. IEC Logic Symbol
74HC4051D
74HC4052D
7. Marking
74HC4051D
74HC4052D
©2016 Toshiba Corporation
2
2016-09-12
Rev.3.0
74HC4051D,74HC4052D
8. System Diagram
74HC4051D
74HC4052D
©2016 Toshiba Corporation
3
2016-09-12
Rev.3.0
74HC4051D,74HC4052D
9. Truth Table
Input
Inhibit
L
L
L
L
L
L
L
L
H
Input
C*
L
L
L
L
H
H
H
H
X
Input
B
L
L
H
H
L
L
H
H
X
Input
A
L
H
L
H
L
H
L
H
X
ON Channel
74HC4051D
0
1
2
3
4
5
6
7
None
ON Channel
74HC4052D
0X, 0Y
1X, 1Y
2X, 2Y
3X, 3Y
None
X:
*:
Don't care
Except 74HC4052D
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Supply voltage
Supply voltage
Input voltage
Switch I/O voltage
Input diode current
I/O diode current
Switch through current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
EE
V
CC
-V
EE
V
IN
V
I/O
I
IK
I
I/OK
I
T
I
CC
P
D
T
stg
Rating
-0.5 to 7.0
-7.0 to 0
-0.5 to 13.0
-0.5 to V
CC
+ 0.5
V
EE
- 0.5 to V
CC
+ 0.5
±20
±20
±25
±50
500
-65 to 150
Unit
V
V
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
11. Operating Ranges (Note)
Characteristics
Supply voltage
Supply voltage
Supply voltage
Input voltage
Switch I/O voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
EE
V
CC
-V
EE
V
IN
V
I/O
T
opr
t
r
,t
f
Rating
2.0 to 6.0
-6.0 to 0
2.0 to 12.0
0 to V
CC
V
EE
to V
CC
-40 to 85
0 to 50
Unit
V
V
V
V
V
µs
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
4
2016-09-12
Rev.3.0
74HC4051D,74HC4052D
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
EE
(V)
V
CC
(V)
2.0
4.5
6.0
Low-level input voltage
V
IL
2.0
4.5
6.0
ON-resistance
R
ON
V
IN
= V
IH
or V
IL
V
I/O
= V
CC
to V
EE
I
I/O
≤
2 mA
GND
GND
-4.5
-6.0
V
IN
= V
IH
or V
IL
V
I/O
= V
EE
I
I/O
≤
2 mA
GND
GND
-4.5
-6.0
V
IN
= V
IH
or V
IL
V
I/O
= V
CC
I
I/O
≤
2 mA
GND
GND
-4.5
-6.0
Difference of ON-resistance
between switches
∆R
ON
V
IN
= V
IH
or V
IL
V
I/O
= V
CC
to V
EE
I
I/O
≤
2 mA
V
OS
= V
CC
or GND
V
IS
= GND or V
CC
V
IN
= V
IH
or V
IL
V
OS
= V
CC
or GND
V
IN
= V
IH
or V
IL
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
GND
-4.5
-6.0
GND
-6.0
GND
-6.0
GND
GND
-6.0
2.0
4.5
4.5
6.0
2.0
4.5
4.5
6.0
2.0
4.5
4.5
6.0
4.5
4.5
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
Typ.
180
140
135
210
150
130
125
220
95
75
70
4
3
3
Max
0.50
1.35
1.80
240
190
180
200
170
170
130
100
100
5
4
4
±0.06
±0.1
±0.06
±0.1
±0.1
4.0
8.0
µA
µA
µA
µA
Ω
Ω
V
Unit
V
Input/Output leakage current
(Switch OFF)
Input/Output leakage current
(Switch ON)
Control input leakage current
Quiescent supply current
I
OFF
I
I/O
I
IN
I
CC
©2016 Toshiba Corporation
5
2016-09-12
Rev.3.0
NXP MCU
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