FMMT459
500V Silicon NPN high voltage switching transistor
Summary
V
(BR)CEV
> 500V
V
(BR)ECV
> 6V
I
c(cont)
= 150 mA
V
ce(sat)
= 70 mV @ 50 mA
Description
This new high voltage transistor provides users with very efficient performance, combining low
V
CE(SAT)
high Hfe to give extremely low on state losses at 500V operation, making it ideal for use
in high efficiency Telecom and protected line switching applications.
Features
■
6V reverse blocking capability
■
Low saturation voltage - 90mV @ 50mA
■
Hfe
50 @ 30 mA
■
I
C
=150mA continuous
■
SOT23 package with Ptot 625mW
■
Specification can be supplied in other package outlines
Applications
■
Electronic test equipment
■
Offline switching circuits
■
Piezo actuators
■
RCD circuits
Ordering information
Device
FMMT459TA
FMMT459TC
Reel size
(inches)
7
13
Tape width
(mm)
8
8
Quantity
per reel
3,000
10,000
Pin out - top view
Device marking
459
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
1
www.zetex.com
FMMT459
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Emitter-collector voltage
Peak pulse current
Continuous collector current
*
Base current
Power dissipation @ T
A
=25°C
*
Linear derating factor
Power dissipation @ T
A
=25°C
†
Linear derating factor
Operating and storage temperature range
Symbol
V
CBO
V
CEV
V
CEO
V
EBO
V
ECV
I
CM
I
C
I
B
P
D
Limit
500
500
450
6
6
0.5
0.15
0.2
625
5
806
6.4
-55 to
+150
Unit
V
V
V
V
V
A
A
A
mW
mW/°C
mW
mW/°C
°C
P
D
T
j
:T
stg
Thermal resistance
Parameter
Junction to ambient
*
Junction to ambient
†
Symbol
R
JA
R
JA
Value
200
155
Unit
°C/W
°C/W
NOTES:
* For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions
† as above measured at t<5secs.
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
2
www.zetex.com
FMMT459
Thermal characteristics
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
100m
DC
1s
10m
100ms
10ms
1ms
100µs
1m
100m
Single Pulse T
amb
=25°C
V
CE
Collector-Emitter Voltage (V)
1
10
100
Max Power Dissipation (W)
I
C
Collector Current (A)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
200
150
D=0.5
Derating Curve
100
50
0
100µ
D=0.2
D=0.1
Single Pulse
D=0.05
1m
10m 100m
Pulse Width (s)
1
10
100
1k
Transient Thermal Impedance
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
3
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FMMT459
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base
breakdown voltage
Emitter-base
breakdown voltage
(reverse blocking)
Collector-emitter
cut-off current
Collector-base
cut-off current
Emitter-base
cut-off current
Static forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter turn-on
voltage
Transition frequency
Output capacitance
Turn-on time
Turn-off time
Symbol
BV
CBO
BV
CEV
BV
CEO
BV
EBO
BV
ECV
Min.
500
500
450
6
6
Typ.
700
700
500
8.1
8.1
Max.
Unit
V
V
V
V
V
Conditions
I
C
= 100 A
I
C
= 10 A,
0.3V > V
BE
> -1V
I
C
= 10mA
*
I
E
= 100 A
I
C
= 1 A,
0.3V > V
BC
> -6V
V
CE
=450V
V
CB
=450V
V
EB
=5V
I
C
= 30mA, V
CE
= 10V
I
C
= 50mA
*
, V
CE
= 10V
75
90
0.9
0.9
mV
mV
V
V
MHz
5
113
3450
P
F
I
CES
I
CBO
I
EBO
H
FE
V
CE(sat)
50
120
70
60
70
V
BE(sat)
V
BE(on)
f
T
C
obo
t
(ON)
t
(OFF)
50
0.76
0.71
100
100
100
nA
nA
nA
I
C
= 20mA, I
B
= 2mA
*
I
C
= 50mA, I
B
= 6mA
*
I
C
= 50mA, I
B
= 5mA
*
I
C
= 50mA, V
CE
= 10V
*
I
C
= 10mA, V
CE
= 20V
f = 20MHZ
V
CB
= 20V, f = 1MHZ
I
C
= 50mA, V
C
= 100V
I
B1
= 5mA, I
B2
= 10mA
I
C
= 50mA, V
C
= 100V
I
B1
= 5mA, I
B2
= 10mA
ns
ns
NOTES:
* Measured under pulsed conditions. Pulse width = 300 s; duty cycle <2%
Note:
For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
4
www.zetex.com
FMMT459
Electrical characteristics
1
Tamb=25°C
I
C
/I
B
=50
0.40
0.35
0.30
I
C
/I
B
=20
100°C
25°C
-55°C
V
CE(SAT)
(V)
V
CE(SAT)
(V)
0.25
0.20
0.15
0.10
0.05
100m
I
C
/I
B
=10
I
C
/I
B
=20
10m
1m
I
C
Collector Current (A)
10m
100m
1m
V
CE(SAT)
v I
C
I
C
Collector Current (A)
10m
100m
V
CE(SAT)
v I
C
1.2
V
CE
=10V
100°C
25°C
210
180
1.0
I
C
/I
B
=20
Normalised Gain
Typical Gain (h
FE
)
V
BE(SAT)
(V)
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
-55°C
150
120
90
60
30
0
0.8
-55°C
0.6
0.4
1m
25°C
100°C
I
C
Collector Current (A)
h
FE
v I
C
I
C
Collector Current (A)
10m
100m
V
BE(SAT)
v I
C
1.0
V
CE
=10V
0.8
V
BE(ON)
(V)
-55°C
0.6
25°C
100°C
0.4
1m
I
C
Collector Current (A)
10m
100m
V
BE(ON)
v I
C
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
5
www.zetex.com
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