PD - 94174
IRF7757
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Common Drain Configuration
V
DSS
20V
R
DS(on)
max (mΩ)
Ω)
35@V
GS
= 4.5V
40@V
GS
= 2.5V
I
D
4.8A
3.8A
Description
HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
1
2
3
4
1=
2=
3=
4=
S1
G1
S2
G2
8=
7=
6=
5=
D
D
D
D
8
7
6
5
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
4.8
3.9
19
1.2
0.76
9.5
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
105
Units
°C/W
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1
05/03/01
IRF7757
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
20
–––
–––
–––
0.60
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.013
–––
–––
–––
–––
–––
–––
–––
–––
15
2.5
4.8
9.5
9.2
36
14
1340
180
132
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
35
V
GS
= 4.5V, I
D
= 4.8A
mΩ
40
V
GS
= 2.5V, I
D
= 3.8A
1.2
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 10V, I
D
= 4.8A
1.0
V
DS
= 16V, V
GS
= 0V
µA
25
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
100
V
GS
= 12V
nA
-100
V
GS
= -12V
23
I
D
= 4.8A
–––
nC V
DS
= 16V
–––
V
GS
= 4.5V
–––
V
DD
= 10V
–––
I
D
= 1.0A
ns
–––
R
G
= 6.2Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
pF
V
DS
= 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
10
1.2
A
19
1.2
30
15
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.2A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF7757
1000
VGS
TOP
7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
100
ID , Drain-to-Source Current (A)
100
10
ID , Drain-to-Source Current (A)
VGS
7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
10
1
1.5V
20µs PULSE WIDTH
Tj = 25°C
1.5V
20µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
0.1
0.1
1
10
100
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
2.0
I
D
= 4.8A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
ID , Drain-to-Source Current
(Α
)
1.5
10.00
T J = 150°C
1.0
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
1.5
2.0
2.5
3.0
0.5
1.00
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7757
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds
gd
5
I
D
=
4.8A
V
DS
= 16V
V
DS
= 10V
V
GS
, Gate-to-Source Voltage (V)
4
C, Capacitance(pF)
Ciss
1000
3
2
Coss
Crss
100
1
10
100
1
0
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10.00
T J = 150°C
10
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
100
1.00
T J = 25°C
VGS = 0V
0.10
0.1
0.5
0.9
1.2
1.6
2.0
VSD , Source-toDrain Voltage (V)
0.1
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7757
5.0
V
DS
4.0
R
D
V
GS
R
G
I
D
, Drain Current (A)
D.U.T.
+
3.0
-
V
DD
V
GS
2.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
1.0
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1000
Thermal Response (Z
thJC
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.1
0.1
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
P
DM
t
1
t
2
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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