Operating Temperature Range ........................... -40NC to +85NC
Junction Temperature ......................................................+150NC
Storage Temperature Range ............................ -60NC to +150NC
Lead Temperature (soldering, 10s) ................................. +300NC
Soldering Temperature (reflow) .......................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Package Thermal Characteristics (Note 1)
Junction-to-Ambient Thermal Resistance (q
JA
) ..............29°C/W
Junction-to-Case Thermal Resistance (q
JC
) .....................2°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Thermal resistance can be lowered with improved board design.
Electrical Characteristics
PARAMETER
POWER SUPPLIES
V
CC
Operating Range
IN Operating Range
V
CC
Supply Current
IN Supply Current
V
CC
Default Undervoltage
Lockout
V
CC
Default Undervoltage-
Lockout Hysteresis
REG Regulator Voltage
UV Turn-On Threshold
UV Turn-On Threshold
Hysteresis
OV Turn-On Threshold
OV Turn-On Threshold
Hysteresis
EN
Threshold
EN
Threshold Hysteresis
(V
IN
= V
CC
= 2.7V to 18V, T
A
= T
J
= -40°C to +85°C, unless otherwise noted. Typical values are at V
IN
= 12V, R
CB
= 25kΩ, and T
A
= +25°C.) (Note 2)
SYMBOL
V
CC
V
IN
I
CC
I
IN
V
UVLO
V
UVLO_HYS
V
REG
V
UV_TH
V
UV_HYS
V
OV_TH
V
OV_HYS
V
EN_TH
V
EN_HYS
No load, V
CC
> 4V
V
UV
rising
V
UV
falling
V
OV
rising
V
OV
falling
V
EN
rising
V
EN
falling
0.95
1.18
3
1.18
V
IN
= 3V
R
CB
= 25kΩ, no load
R
CB
= 10kΩ, no load
V
CC
rising
2.35
CONDITIONS
MIN
2.7
2.7
0.4
3.3
1.75
2.5
0.1
3.3
1.2
0.1
1.2
0.1
1
0.1
1.05
1.22
3.5
1.22
TYP
MAX
18
18
0.65
3.6
2
2.65
UNITS
V
V
mA
mA
V
V
V
V
V
V
V
V
V
www.maximintegrated.com
Maxim Integrated │ 2
MAX15091/MAX15091A
2.7V to 18V, 9A, Integrated Hot-Swap
Solution with Current Report Output
Electrical Characteristics (continued)
PARAMETER
OV, UV,
EN
Input Leakage
Current
CB Source Current
CURRENT LIMIT
Circuit-Breaker Accuracy
(Note 3)
Circuit-Breaker Accuracy
Deviation
Slow-Comparator Response
Time (Note 4)
Maximum Current Limit
During Startup
Fast-Comparator Threshold
Fast-Comparator Response
Time
Minimum CB Voltage
Reference During Foldback
(Note 5)
Maximum CB Voltage
Reference During Foldback
(Note 5)
TIMING
Startup Maximum Time
Duration
Autorestart Delay Time
Time Delay Comparator
High Threshold
Time Delay Pullup Current
Output Short Detection at
Startup
MOSFET
Total On-Resistance
GATE Charge Current
R
ON
I
GATE
t
SU
t
RESTART
V
DLY_TH
I
DLY
t
SHORT
t
SCD
I
LIM
I
FC_TH
t
FCD
V
THCB_MIN
I
CB,TH
SYMBOL
I
LEAK
I
THCB_NORM
(V
IN
= V
CC
= 2.7V to 18V, T
A
= T
J
= -40°C to +85°C, unless otherwise noted. Typical values are at V
IN
= 12V, R
CB
= 25kΩ, and T
A
= +25°C.) (Note 2)
CONDITIONS
V
OV
= V
UV
= V
EN
= 0 to 5V
Power-on mode
R
CB
= 25kΩ
R
CB
= 8.33kΩ
8
2.7
-10
2.7
200
I
CB,TH
I
CB,TH
200
1.5 x
MIN
-1
12
9
3
10
3.3
+10
TYP
MAX
+1
UNITS
µA
µA
V
IN
= 12V
A
%
ms
µs
A
A
ns
R
CB
= 8.33kΩ to 25kΩ, compared to
nominal current-limit value
0.6% overcurrent
30% overcurrent
(see Figure 2)
V
IN
- V
OUT
> 10V, R
CB
= 25kΩ
35
mV
V
THCB_MAX
V
IN
- V
OUT
< 2V, R
CB
= 25kΩ
150
mV
43
48
3.2
53
ms
s
1.85
1.6
10.8
2
1.9
12
2.15
2.2
13.2
V
µA
ms
T
A
= +25°C
T
A
= -40°C to +85°C
4.56
18
5.7
23
27
6.84
mΩ
µA
www.maximintegrated.com
Maxim Integrated │ 3
MAX15091/MAX15091A
2.7V to 18V, 9A, Integrated Hot-Swap
Solution with Current Report Output
Electrical Characteristics (continued)
PARAMETER
OUTPUTS
FAULT,
PG Output Low
Voltage
FAULT,
PG Output High
Leakage Current
CURRENT REPORT
ISENSE Full-Scale Current
ISENSE Gain Ratio
ISENSE Voltage Range
ISENSE Offset Error
ISENSE Gain Error
PG THRESHOLD
PG Threshold
PG Assertion Delay
OUT to IN Short-Circuit
Detection Threshold
OUT Precharge Threshold
THERMAL SHUTDOWN
Thermal Shutdown
Thermal-Shutdown Hysteresis
T
SD
V
PG
t
PG
V
IOSHT
V
PC
V
ISENSE
I
ISENSE_OFF
I
ISENSE_ERROR
I
ISENSE
V
OL
I
OH
SYMBOL
(V
IN
= V
CC
= 2.7V to 18V, T
A
= T
J
= -40°C to +85°C, unless otherwise noted. Typical values are at V
IN
= 12V, R
CB
= 25kΩ, and T
A
= +25°C.) (Note 2)
CONDITIONS
Low-impedance state,
I
FAULT
= +5mA, I
PG
= +5mA
High-impedance state,
V
FAULT
= 16V, V
PG
= 16V
1.53
ISENSE/I
OUT
V
IN
= 12V
T
A
= +25°C
T
A
= -40°C to +85°C
T
A
= +25°C
T
A
= -40°C to +85°C
0
-32
-45
-3
-5.5
0.9 x
V
IN
12
16
0.9 x
V
IN
0.5 x
V
IN
+150
20
20
170
2.5
+32
+45
+3
+5.5
MIN
TYP
MAX
UNITS
0.4
1
V
µA
mA
µA/A
V
µA
%
Measured at V
OUT
, V
IN
= 12V
From V
OUT
> V
PG
and
(V
GATE
- V
IN
) > 3V
Measured at V
OUT
, V
IN
= 12V
Measured at V
OUT
, V
IN
= 12V
V
ms
V
V
T
J
rising
T
J
falling
°C
°C
Note 2:
All devices are 100% production tested at T
A
= +25°C. Limits over temperature are guaranteed by design.
Note 3:
25kΩ is the maximum allowed external resistance value to be connected at CB pin to GND for safe operation. All devices
are tested with 8.33kΩ, the parameter specified at R
CB
= 25kΩ is guaranteed by bench characterization and correlation,
with respect to the tested parameter at R
CB
= 8.33kΩ. The formula that describes the relationship between R
CB
and the
circuit-breaker current threshold is: I
CB
= R
CB
/2777.8.
Note 4:
The current-limit slow-comparator response time is weighed against the amount of overcurrent so the higher the
overcurrent condition, the faster the response time.
Note 5:
Foldback is active during the startup phase so the internal power MOSFET operates within SOA.
www.maximintegrated.com
Maxim Integrated │ 4
MAX15091/MAX15091A
2.7V to 18V, 9A, Integrated Hot-Swap
Solution with Current Report Output
Typical Operating Characteristics
IN SUPPLY CURRENT
vs. TEMPERATURE
(V
IN
= V
CC
= 2.7V to 18V, T
J
= -40°C to +85°C, unless otherwise noted. Typical values are at V
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