1N5415 THRU 1N5420
3SF05 THRU 3SF6
Axial Leaded Hermetically Sealed
Fast Rectifier Diode
POWER DISCRETES
Description
Quick reference data
V
R
= 50 - 600V
I
F =
4.5A
t
rr
= 150 - 400nS
I
R
= 1.0µA
Features
Very low reverse recovery time
Hermetically sealed non-cavity construction.
Low switching losses
Low forward voltage drop
Soft, non-snap off, recovery characteristics
Capable of withstanding temperature cycle
conditions from -180°C to +130°C for space
critical programs.
These products are qualified to MIL-PRF-19500/411.
They can be supplied fully released as JAN, JANTX,
JANTXV and JANS versions.
Absolute Maximum Ratings
Electrical specifications @ T
A
= 25°C unless otherwise specified.
Symbol
Working Reverse Voltage
Repetitive Reverse Voltage
Average Forward Current
@ 55°C in free air, lead length
0.375"
Repetitive Surge Current
@ 55°C in free air, lead length
0.375"
Non-Repetitive Surge Current
(tp = 8.3mS @ V
R
& T
JMAX
)
(tp = 8.3mS, @ V
R
& 25°C)
Storage Temperature Range
V
RWM
V
RRM
I
F(AV)
1N 5415
3S F 05
50
50
1N 5416
3S F 1
100
100
1N 5417
3S F 2
200
200
4.5
1N 5418
3S F 4
400
400
1N 5419
3S F 5
500
500
1N 5420
3S F 6
600
600
Units
V
V
A
I
FRM
25
A
I
FSM
T
STG
80
150
-65 to +175
A
°C
Revision: September, 2010
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1N5415 THRU 1N5420
3SF05 THRU 3SF6
POWER DISCRETES
Electrical Specifications
Symbol
Average Forward Current max.
for sine wave, T
A
= 55°C
Average Forward Current max.
(T
L
= 55°C; L = 3/8")
for sine wave
for square wave
I
2
t for fusing (t = 8.3mS) max
Forward Voltage Drop max.
@ I
F
= 3.0A, T
j
= 25°C
Reverse Current max.
@ V
RWM
, Tj = 25°C
@ V
RWM
, Tj = 100°C
Reverse Recovery Time max.
0.5A I
F
to 1.0A I
RM
recovers to 0.25A
I
RM(REC)
Junction Capacitance typ.
@ V
R
= 4V, f = 1MHz
I
F(AV)
1N 5415
3S F 05
1N 5416 1N 5417
3S F 1
3S F 2
1N 5418
3S F 4
1N 5419
3S F 5
1N 5420
3S F 6
Units
A
3.0
I
F(AV)
I
F(AV)
I
2
t
V
F
I
R
I
R
trr
150
150
150
4.4
4.5
90
1.1
1.0
20
150
250
400
A
A
2
S
V
µA
nS
Cj
550
430
250
165
140
120
pF
Thermal Characteristics
Symbol
Thermal Resistance-Junction to Lead
Lead length = 0.375"
Lead length = 0.0"
Thermal Resistance-Junction to
Ambient on 0.06" thick pcb. 1 oz.
co p p e r
1N 5415
3S F 05
1N 5416
3S F 1
1N 5417 1N 5418 1N 5419
3S F 2
3S F 4
3S F 5
20
4
75
1N 5420
3S F 6
Units
R
θ
JL
R
θ
JL
R
θ
JA
°C/W
°C/W
Application Note
These diodes are capable of withstanding 20 cycles of Temperature Cycling from -180°C to +130°C for
for Space Critical Programs. Semtech is also able to offer this test condition as a 100% Screening
Option. A full Summary Data Report is available on request. Please consult the factory for details.
©
2010 Semtech Corp.
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www.semtech.com
1N5415 THRU 1N5420
3SF05 THRU 3SF6
POWER DISCRETES
Typical Characteristics
©
2010 Semtech Corp.
3
www.semtech.com
1N5415 THRU 1N5420
3SF05 THRU 3SF6
POWER DISCRETES
Typical Characteristics
©
2010 Semtech Corp.
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www.semtech.com
1N5415 THRU 1N5420
3SF05 THRU 3SF6
POWER DISCRETES
Ordering Information
Part Number
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
3S F 05
3S F 1
3S F 2
3S F 4
3S F 5
3S F 6
Description
Axial leaded hermetically sealed
(1)
Note:
(1) Available in bulk and tape and reel packaging. Please
consult factory for quantities.
Outline Drawing
G4
Dimensions
Inches
DIM
A
B
C
D
E
N
Millimeters
MIN
3.43
22.9
3.3
-
0.91
MAX
4.57
33.0
4.32
1.27
1.07
Note
MIN
0.135
0.9
0.13
-
0.036
MAX
0.18
1.3
0.17
0.05
0.042
-
-
-
1
-
Note:
(1) Lead diameter uncontrolled over this region.
Weight = 0.04oz
Contact Information
Semtech Corporation
Power Discretes Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
©
2010 Semtech Corp.
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