2N6383 – 2N6385
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
NPN Darlington Power Silicon Transistor
Qualified per MIL-PRF-19500/523
DESCRIPTION
This high speed NPN transistor is rated at 10 amps and is military qualified up to the JANTXV
level. This TO-204AA isolated package features a 180 degree lead orientation.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
JEDEC registered 2N6383 through 2N6385
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/523.
(See
part nomenclature
for all available options.)
RoHS compliant versions are available (commercial grade only)
TO-204AA
(TO-3)
Package
•
APPLICATIONS / BENEFITS
•
•
•
Military and other high reliability applications
High frequency response
TO-204AA case with isolated terminals
MAXIMUM RATINGS
@ T
A
= +25
o
C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Collector-Emitter Voltage
Symbol
T
J
and T
STG
R
ӨJC
V
CEO
Value
-55 to +175
1.75
40
60
80
40
60
80
5
6.0
100
0.25
10
Unit
o
Collector-Base Voltage
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
@ T
A
= +25 C
o (2)
@ T
C
= +25 C
o
(1)
C
C/W
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
V
CBO
V
Emitter-Base Voltage
Total Power Dissipation
Base Current
Collector Current
V
EBO
P
T
I
B
I
C
V
W
A
A
Notes:
1. Derate linearly 34.2 mW/
o
C above T
A
> +25
o
C.
2. Derate linearly 571 mW/
o
C above T
C
> +25
o
C.
T4-LDS-0316, Rev. 1 (9/13/13)
©2013 Microsemi Corporation
Page 1 of 7
2N6383 – 2N6385
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Industry standard TO-204AA (TO-3), hermetically sealed, 0.040 inch diameter pins
FINISH: Solder dipped tin-lead over nickel plated alloy 52 or RoHS compliant matte-tin plating. Solderable per MIL-STD-750
method 2026.
POLARITY: NPN (see
schematic)
MOUNTING HARDWARE: Consult factory for optional insulator and sheet metal screws
WEIGHT: Approximately 15 grams
See
package dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N6283
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
I
B
I
C
I
E
T
C
V
CB
V
CBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Emitter current: The value of the dc current into the emitter terminal.
Case temperature: The temperature measured at a specified location on the case of a device.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Emitter-base voltage: The dc voltage between the emitter and the base.
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
V
CC
V
CEO
V
CE
V
EB
V
EBO
T4-LDS-0316, Rev. 1 (9/13/13)
©2013 Microsemi Corporation
Page 2 of 7
2N6383 – 2N6385
ELECTRICAL CHARACTERISTICS
@ T
A
= +25
o
C unless otherwise noted
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mA
Collector-Emitter Breakdown Voltage
I
C
= 200 mA, R
BB
= 100 Ω
Collector-Emitter Cutoff Current
V
CE
= 40 V
V
CE
= 60 V
V
CE
= 80 V
Collector-Emitter Cutoff Current
V
CE
= 40 V, V
BE
= 1.5 V
V
CE
= 60 V, V
BE
= 1.5 V
V
CE
= 80 V, V
BE
= 1.5 V
Emitter-Base Cutoff Current
V
EB
= 5.0 V
Collector-Emitter Cutoff Current
V
CE
= 40 V
V
CE
= 60 V
V
CE
= 80 V
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 5.0 A, V
CE
= 3.0 V
I
C
= 10 A, V
CE
= 3.0 V
I
C
= 5.0 A, V
CE
= 3.0 V, T
A
= -55 ºC
Collector-Emitter Saturation Voltage
I
C
= 5.0 A, I
B
= 10 mA
I
C
= 10 A, I
B
= 0.1 A
Base-Emitter Voltage Non-saturated
V
CE
= 3.0 V, I
C
= 5.0 A
V
CE
= 3.0 V, I
C
= 10 A
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0 A, V
CE
= 5.0 V, f = 1.0 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 100 kHz ≤ f ≤ 1 MHz
Symbol
Min.
Max.
Unit
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
V
(BR)CEO
40
60
80
40
60
80
V
V
(BR)CER
V
I
CEO
1.0
mA
I
CEX
I
EBO
100
5.0
µA
mA
2N6383
2N6384
2N6385
I
CBO
1.0
mA
h
FE
1,000
100
200
20,000
V
CE(sat)
2.0
3.0
2.8
4.5
V
V
BE(on)
V
|hfe|
Cobo
20
300
200
pF
T4-LDS-0316, Rev. 1 (9/13/13)
©2013 Microsemi Corporation
Page 3 of 7
2N6383 – 2N6385
ELECTRICAL CHARACTERISTICS
@ T
C
= 25
o
C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 V, I
C
= 5.0 A; I
B
= 20 mA
Turn-Off Time
V
CC
= 30 V, I
C
= 5.0 A; I
B1
= -I
B2
= 20 mA
t
on
t
off
2.5
10
µs
µs
SAFE OPERATING AREA (See
Figures 1 and 2
and
MIL-STD-750,Test Method 3053)
DC Tests
T
C
= +25 °C, t = 1 second, 1 Cycle
Test 1
V
CE
= 10 V, I
C
= 10 A
Test 2
V
CE
= 30 V, I
C
= 3.33 A
Test 3
V
CE
= 40 V, I
C
= 1.5 A (2N6383)
V
CE
= 60 V, I
C
= 0.4 A (2N6384)
V
CE
= 80 V, I
C
= 0.16 A (2N6385)
T4-LDS-0316, Rev. 1 (9/13/13)
©2013 Microsemi Corporation
Page 4 of 7
2N6383 – 2N6385
SAFE OPERATING AREA
I
C
= Collector Current (Amperes)
V
CE
– Collector to Emitter Voltage (Volts)
FIGURE 1
Maximum Safe Operating Graph (continuous dc)
I
C
= Collector Current (Amperes)
L – Inductance (Millihenries)
FIGURE 2
Safe Operating Area for Switching Between Saturation and Cutoff (unclamped inductive load)
T4-LDS-0316, Rev. 1 (9/13/13)
©2013 Microsemi Corporation
Page 5 of 7
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
