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MAPLAD130KP275CVE3

产品描述Trans Voltage Suppressor Diode, 1300001W, 275V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-1
产品类别分立半导体    二极管   
文件大小235KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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MAPLAD130KP275CVE3概述

Trans Voltage Suppressor Diode, 1300001W, 275V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-1

MAPLAD130KP275CVE3规格参数

参数名称属性值
是否Rohs认证符合
Objectid1058090718
包装说明PLASTIC PACKAGE-1
针数1
Reach Compliance Codecompliant
ECCN代码EAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2019-11-08 17:42:43
其他特性HIGH RELIABILITY
最小击穿电压300 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PSSO-G1
最大非重复峰值反向功率耗散1300001 W
元件数量1
端子数量1
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散250 W
最大重复峰值反向电压275 V
表面贴装YES
技术AVALANCHE
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 130 kW
Transient Voltage Suppressor
- High Reliability controlled devices
- Bidirectional (CA) construction
- 275 V standoff voltages (V
WM
)
- Fast response
LEVELS
M, MA, MX, MXL
DEVICES
MPLAD130KP275CA and MPLAD130KP275CV, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Low package inductance
Available as either low clamp with “CV” suffix or normal clamping features with “CA” suffix
Optional up screening available by replacing the M prefix with MA, MX or MXL. These
prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500.
Refer to
MicroNote 129
for more details on the screening options.
Suppresses transients up to 130 kW1 @ 6.4/69 µs
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C: 130,0001 watts @ 6.4/69 µs (also see Figure 1) with
impulse repetition rate (duty factor) of 0.05% or less
tclamping (0 volts to VBR min.): < 5 ns (theoretical)
Operating and Storage temperature: -55 °C to +150 °C
Thermal resistance: 0.5 °C/W junction to case or 50 °C/W junction to ambient when mounted
on FR4 PC board with recommended mounting pad (see page 2) and 1oz Cu
Steady-State Power dissipation: 250 watts at T
C
= 25 °C with good heat sink, or 2.5 watts at
T
A
= 25 °C if mounted on FR4 PC board as described for thermal resistance
Temperature Coefficient of voltage: 0.1 %/°C
Solder temperatures: 260 °C for 10 s (maximum)
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0
Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating
readily solderable per MIL-STD-750, method 2026
Body marked with part number
No Cathode band for Bi-directional devices
Available in custom tape-and-reel or bulk packaging
TAPE-AND-REEL Standard per EIA-481-B (add “TR” suffix to part number)
Weight: 2.2 grams (approximately)
RF01020 Rev A, November 2010
High Reliability Product Group
Page 1 of 3
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