CXG1156K
Power Amplifier Module for JCDMA
Description
The CXG1156K is the power amplifier module which
operates at a single power supply. This IC is designed
using the Sony’s original p-Gate HFET process.
Features
•
Single power supply operation:
V
DD1
= V
DD2
= 3.5V (High power mode),
1.3V (Low power mode 1),
1.0V (Low power mode 2),
V
GG
= 2.7V
•
Small package: 0.065cc (6.2mm
×
6.2mm
×
1.7mm)
•
High efficiency:
ηadd
= 40%@P
OUT
= 27.5dBm (High power mode),
ηadd
= 23%@P
OUT
= 15dBm (Low power mode 1)
•
Output power (high/low power mode switching supported):
P
OUT
= 18 to 27.5dBm: High power mode,
P
OUT
= 15 to 18dBm: Low power mode 1,
P
OUT
≤
15dBm: Low power mode 2
•
Gain: Gp = 29dB (@900MHz)
Applications
Power amplifier for JCDMA system cellular phones
Structure
p-Gate HFET module
Absolute Maximum Ratings
(Ta = 25°C)
•
Operating case temperature Tcase
–30 to +90
°C
•
Storage temperature
Tstg
–30 to +125
°C
•
Bias voltage
V
DD1
, V
DD2
6
V
•
Bias voltage
V
GG
3.3
V
(@V
DD1
= V
DD2
= 3.5V)
•
Input power
P
IN
8
dBm
Recommended Operating Conditions*
•
V
DD1
= V
DD2
= 3.2 to 4.2V@P
OUT
= 18 to 27.5dBm,
1.3 to 2.0V@P
OUT
≤
18dBm,
1.0 to 2.0V@P
OUT
≤
15dBm
•
V
GG
= 2.7V ± 1%
10 pin LCC (Ceramic)
*
This recommended operating voltage is the value that specified the supply voltage range where the functional
operation was confirmed by the Sony’s recommended evaluation board.
GaAs module is ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E02641-PS
CXG1156K
Package Outline/Pin Configuration
Front
GND
10
GND
9
P
IN
1
8
V
GG
V
DD1
2
7
GND
V
DD2
3
6
P
OUT
4
GND
5
GND
Back
GND
4
GND
5
V
DD2
3
6
P
OUT
V
DD1
2
11
GND
7
GND
P
IN
1
8
V
GG
10
GND
9
GND
Note)
Be sure to solder the GND part (11) to the land.
For the land where the GND part (11) is connected, form the GND pattern by making the throgh holes
in the land.
–2–
CXG1156K
Electrical Characteristics
Item
Frequency
Current consumption 1
Current consumption 2
Current consumption 3
Gain 1
Gain 2
Gain 3
ACPR1
(High power mode)
ACPR2
(High power mode)
ACPR1
(Low power mode 1)
ACPR2
(Low power mode 1)
ACPR1
(Low power mode 2)
ACPR2
(Low power mode 2)
2nd, 3rd harmonics
Input VSWR
Gate current
Conditions
(ZS = ZL = 50Ω, IS-95 Modulation, Tc = 25°C)
Min.
887
P
OUT
= 27.5dBm, V
DD
= 3.5V, V
GG
= 2.7V
P
OUT
= 15dBm, V
DD
= 1.3V, V
GG
= 2.7V
P
OUT
= 12dBm, V
DD
= 1.0V, V
GG
= 2.7V
P
OUT
= 27.5dBm, V
DD
= 3.5V, V
GG
= 2.7V
P
OUT
= 18dBm, V
DD
= 1.3V, V
GG
= 2.7V
P
OUT
= 15dBm, V
DD
= 1.0V, V
GG
= 2.7V
P
OUT
= 27.5dBm, V
DD
= 3.5V, V
GG
= 2.7V,
±900kHz offset, 30kHz band width
P
OUT
= 27.5dBm, V
DD
= 3.5V, V
GG
= 2.7V,
±1.98MHz offset, 30kHz band width
P
OUT
= 18dBm, V
DD
= 1.3V, V
GG
= 2.7V,
±900kHz offset, 30kHz band width
P
OUT
= 18dBm, V
DD
= 1.3V, V
GG
= 2.7V,
±1.98MHz offset, 30kHz band width
P
OUT
= 15dBm, V
DD
= 1.0V, V
GG
= 2.7V,
±900kHz offset, 30kHz band width
P
OUT
= 15dBm, V
DD
= 1.0V, V
GG
= 2.7V,
±1.98MHz offset, 30kHz band width
P
OUT
= 27.5dBm, V
DD
= 3.5V, V
GG
= 2.7V
V
DD
= 3.5V, V
GG
= 2.7V
V
GG
= 2.7V, P
OUT
≤
27.5dBm
25
22
20
405
105
79
29
24
22
–54
–64
–56
–63
–56
–63
–27
1.3
1.7
–47
–58
–50
–58
–50
–58
–23
2
2.5
mA
Typ.
Max.
925
420
110
90
Unit
MHz
mA
mA
mA
dB
dB
dB
dBc
dBc
dBc
dBc
dBc
dBc
dBc
–3–
CXG1156K
Example of Representative Characteristics
Conditions: f = 900MHz
V
DD1
= V
DD2
= 3.5V, V
GG
= 2.7V (High power mode)
V
DD1
= V
DD2
= 1.3V, V
GG
= 2.7V (Low power mode 1)
Ta = 25°C
P
OUT
vs. P
IN
32
30
V
DD
= 3.5V
28
V
DD
= 1.3V
26
24
22
20
18
16
14
12
10
8
6
4
2
–26 –24 –22 –20 –18 –16 –14 –12 –10 –8 –6 –4 –2 0 2 4
P
IN
[dBm]
600
550
500
450
400
V
DD
= 3.5V
V
DD
= 1.3V
I
DD
vs. P
OUT
P
OUT
[dBm]
I
DD
[mA]
350
300
250
200
150
100
50
0
4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
P
OUT
[dBm]
ACPR1 vs. P
OUT
–34
–36
–38
–40
–42
–44
–46
–48
–50
–52
–54
–56
–58
–60
–62
–64
–66
–68
–70
–72
–74
V
DD
= 3.5V
V
DD
= 1.3V
–48
–50
–52
–54
–56
–58
–60
–62
–64
–66
–68
–70
–72
–74
–76
–78
ACPR2 vs. P
OUT
V
DD
= 3.5V
V
DD
= 1.3V
ACPR1 [dBc]
4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
P
OUT
[dBm]
ACPR2 [dBc]
4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
P
OUT
[dBm]
–5–
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