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SIT2025BI-S8-28N-125.000000G

产品描述OSC MEMS 125.0000MHZ LVCMOS SMD
产品类别无源元件   
文件大小852KB,共15页
制造商SiTime
标准
下载文档 详细参数 全文预览

SIT2025BI-S8-28N-125.000000G概述

OSC MEMS 125.0000MHZ LVCMOS SMD

SIT2025BI-S8-28N-125.000000G规格参数

参数名称属性值
类型MEMS(硅)
频率125MHz
输出LVCMOS
电压 - 电源2.8V
频率稳定度±30ppm
工作温度-40°C ~ 85°C
电流 - 电源(最大值)8mA
安装类型表面贴装
封装/外壳SC-74A,SOT-753
大小/尺寸0.114" 长 x 0.063" 宽(2.90mm x 1.60mm)
高度 - 安装(最大值)0.057"(1.45mm)

文档预览

下载PDF文档
SiT2025B
High Frequency, Automotive AEC-Q100 SOT23 Oscillator
Features
Applications
AEC-Q100 with extended temperature range (-55°C to 125°C)
Frequencies between 115.2 MHz and 137 MHz accurate to
6 decimal points
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Industry best G-sensitivity of 0.1 PPB/G
LVCMOS/LVTTL compatible output
5-pin SOT23-5 package: 2.9 x 2.8 mm x mm
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Automotive, extreme temperature and other high-rel
electronics
Infotainment systems, collision detection devices, and
in-vehicle networking
Powertrain control
Electrical Characteristics
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Parameters
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Min.
115.20
-20
-25
-30
-50
Operating Temperature
Range (ambient)
T_use
-40
-40
-40
-55
Supply Voltage
Current Consumption
Vdd
Idd
1.62
2.25
Duty Cycle
Rise/Fall Time
Output High Voltage
DC
Tr, Tf
VOH
45
90%
Typ.
1.8
6
4.9
1.5
1.5
Max.
137
Unit
MHz
Condition
Refer to
Tables 14 to 16
for the exact list of supported frequencies
Frequency Range
Frequency Stability and Aging
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
+20
ppm
variations over operating temperature, rated power supply voltage
+25
ppm
and load (15 pF ± 10%).
+30
ppm
+50
+85
+105
+125
+125
1.98
3.63
8
6
55
3
2.5
ppm
°C
°C
°C
°C
V
V
mA
mA
%
ns
ns
Vdd
Vdd = 2.25V - 3.63V, 20% - 80%
Vdd = 1.8V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Pin 1, OE
Pin 1, OE
Pin 1, OE logic high or logic low
Measured from the time Vdd reaches its rated minimum value
f = 115.20 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Vdd = 2.8V to 3.3V,
ST
= Low, Output is weakly pulled down
Vdd = 2.5V,
ST
= Low, Output is weakly pulled down
Vdd = 1.8V,
ST
= Low, Output is weakly pulled down
AEC-Q100 Grade 3
AEC-Q100 Grade 2
AEC-Q100 Grade 1
Extended cold, AEC-Q100 Grade1
All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V and 3.3V
are supported. Contact
SiTime
for 1.5V support
No load condition, f = 125 MHz, Vdd = 2.25V to 3.63V
No load condition, f = 125 MHz, Vdd = 1.62V to 1.98V
Operating Temperature Range
Supply Voltage and Current Consumption
LVCMOS Output Characteristics
Output Low Voltage
VOL
10%
Vdd
Input Characteristics
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
Startup Time
Enable/Disable Time
Standby Current
VIH
VIL
Z_in
T_start
T_oe
I_std
70%
100
2.6
1.4
0.6
30%
5
130
Vdd
Vdd
k
ms
ns
A
A
A
Startup and Resume Timing
Rev. 1.6
July 17, 2018
www.sitime.com
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