2N6796U, 2N6798U, 2N6800U, 2N6802U
Qualified Levels:
JAN, JANTX, JANTXV
and JANS*
Compliant
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for high-
reliability applications. The 2N6798U part number is also qualified to the JANS level. These
devices are also available in a TO-205AF (TO-39) package. Microsemi also offers numerous
other transistor products to meet higher and lower power ratings with various switching speed
requirements in both through-hole and surface-mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
Surface mount equivalent of JEDEC registered 2N6796, 2N6798, 2N6800 and 2N6802 number
series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/557.
*JANS qualification is available on 2N6798U only.
(See
part nomenclature
for all available options.)
RoHS compliant by design.
U-18 LCC
Package
Also available in:
TO-205AF (TO-39)
package
(Leaded Top Hat)
2N6796, 2N6798,
2N6800 & 2N6802
•
APPLICATIONS / BENEFITS
•
•
Compact surface mount design enables mounting in crowded areas.
Military and other high-reliability applications.
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise stated
Parameters / Test Conditions
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case (see
Figure 1)
Total Power Dissipation
@ T
A
= +25 °C
(1)
@ T
C
= +25 °C
Drain-Source Voltage, dc
2N6796U
2N6798U
2N6800U
2N6802U
Gate-Source Voltage, dc
(2)
Drain Current, dc @ T
C
= +25 ºC
2N6796U
2N6798U
2N6800U
2N6802U
(2)
Drain Current, dc @ T
C
= +100 ºC
2N6796U
2N6798U
2N6800U
2N6802U
(3)
Off-State Current (Peak Total Value)
2N6796U
2N6798U
2N6800U
2N6802U
Source Current
2N6796U
2N6798U
2N6800U
2N6802U
See notes on next page.
Symbol
T
J
& T
stg
R
ӨJC
P
T
Value
-55 to +150
5.0
0.8
25
100
200
400
500
± 20
8.0
5.5
3.0
2.5
5.0
3.5
2.0
1.5
32
22
14
11
8.0
5.5
3.0
2.5
Unit
o
°C
C/W
W
V
DS
V
GS
I
D1
V
V
A
MSC – Lawrence
6 Lake Street, Lawrence,
MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
D2
A
I
DM
A (pk)
I
S
A
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 1 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
Notes:
1. Derate linearly 0.2 W/°C for T
C
> +25 °C.
2. The following formula derives the maximum theoretical I
D
limit. I
D
is also limited by package and internal wires and may be limited due to
pin diameter.
3. I
DM
= 4 x I
D1
as calculated in note 1.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Ceramic LCC-18 with kovar gold plated lid.
TERMINALS: Gold plating over nickel.
MARKING: Manufacturer's ID, part number, date code, ESD symbol at Pin 1 location.
TAPE & REEL option: Standard per EIA-481-D. Consult factory for quantities.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level (2N6798)
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N6796
U
Surface Mount package
Symbol
di/dt
I
F
R
G
V
DD
V
DS
V
GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 2 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1.0 mA
Gate-Source Voltage (Threshold)
V
DS
≥ V
GS
, I
D
= 0.25 mA
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= +125°C
V
DS
≥ V
GS
, I
D
= 0.25 mA, T
J
= -55°C
Gate Current
V
GS
= ± 20 V, V
DS
= 0 V
V
GS
= ± 20 V, V
DS
= 0 V, T
J
= +125°C
Drain Current
V
GS
= 0 V, V
DS
= 80 V
V
GS
= 0 V, V
DS
= 160 V
V
GS
= 0 V, V
DS
= 320 V
V
GS
= 0 V, V
DS
= 400 V
Drain Current
V
GS
= 0 V, V
DS
= 80 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 160 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 320 V, T
J
= +125 °C
V
GS
= 0 V, V
DS
= 400 V, T
J
= +125 °C
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 5.0 A pulsed
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.0 A pulsed
V
GS
= 10 V, I
D
= 1.5 A pulsed
Static Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 8.0 A pulsed
V
GS
= 10 V, I
D
= 5.5 A pulsed
V
GS
= 10 V, I
D
= 3.0 A pulsed
V
GS
= 10 V, I
D
= 2.5 A pulsed
Static Drain-Source On-State Resistance
T
J
= +125°C
V
GS
= 10 V, I
D
= 5.0 A pulsed
V
GS
= 10 V, I
D
= 3.5 A pulsed
V
GS
= 10 V, I
D
= 2.0 A pulsed
V
GS
= 10 V, I
D
= 1.5 A pulsed
Diode Forward Voltage
V
GS
= 0 V, I
D
= 8.0 A pulsed
V
GS
= 0 V, I
D
= 5.5 A pulsed
V
GS
= 0 V, I
D
= 3.0 A pulsed
V
GS
= 0 V, I
D
= 2.5 A pulsed
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
Symbol
Min.
Max.
Unit
V
(BR)DSS
100
200
400
500
2.0
1.0
4.0
5.0
±100
±200
V
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
V
nA
I
DSS1
25
µA
I
DSS2
0.25
mA
r
DS(on)1
0.18
0.40
1.00
1.50
0.195
0.420
1.100
1.600
Ω
r
DS(on)2
Ω
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
r
DS(on)3
0.35
0.75
2.40
3.50
1.5
1.4
1.4
1.4
Ω
V
SD
V
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 3 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V
GS
= 10 V, I
D
= 8.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 5.5 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 3.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 2.5 A, V
DS
= 50 V
Gate to Source Charge
V
GS
= 10 V, I
D
= 8.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 5.5 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 3.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 2.5 A, V
DS
= 50 V
Gate to Drain Charge
V
GS
= 10 V, I
D
= 8.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 5.5 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 3.0 A, V
DS
= 50 V
V
GS
= 10 V, I
D
= 2.5 A, V
DS
= 50 V
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
Symbol
Min.
Max.
Unit
Q
g(on)
28.51
42.07
34.75
33.00
6.34
5.29
5.75
4.46
16.59
28.11
16.59
28.11
nC
Q
gs
nC
Q
gd
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I
D
= 8.0 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 30 V
I
D
= 5.5 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 77 V
I
D
= 3.0 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 176 V
I
D
= 2.5 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 225 V
Rinse time
I
D
= 8.0 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 30 V
I
D
= 5.5 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 77 V
I
D
= 3.0 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 176 V
I
D
= 2.5 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 225 V
Turn-off delay time
I
D
= 8.0 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 30 V
I
D
= 5.5 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 77 V
I
D
= 3.0 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 176 V
I
D
= 2.5 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 225 V
Fall time
I
D
= 8.0 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 30 V
I
D
= 5.5 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 77 V
I
D
= 3.0 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 176 V
I
D
= 2.5 A, V
GS
= +10 V, R
G
= 7.5
Ω,
V
DD
= 225 V
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
= 8.0 A
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
= 5.5 A
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
= 3.0 A
di/dt ≤ 100 A/µs, V
DD
≤ 50 V, I
F
= 2.5 A
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
2N6796U
2N6798U
2N6800U
2N6802U
Symbol
Min.
Max.
Unit
t
d(on)
30
ns
t
r
75
50
35
30
40
50
55
55
45
40
35
30
300
500
700
900
ns
t
d(off)
ns
t
f
ns
t
rr
ns
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 4 of 10
2N6796U, 2N6798U, 2N6800U, 2N6802U
GRAPHS
THERMAL RESPONSE (Z
ӨJC
)
t
1
, RECTANGLE PULSE DURATION (seconds)
FIGURE 1
– Normalized Transient Thermal Impedance
T4-LDS-0047-1, Rev. 1 (121483)
©2012 Microsemi Corporation
Page 5 of 10
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