RN1901~RN1906
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1901, RN1902, RN1903
RN1904, RN1905, RN1906
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2901 to RN2906
Equivalent Circuit and Bias Resistor Values
Type No.
RN1901
RN1902
RN1903
RN1904
RN1905
RN1906
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
US6
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8mg(typ.)
Equivalent Circuit
(Top View)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1901 to 1906
RN1901 to 1906
RN1901 to 1904
RN1905, 1906
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Start of commercial production
1990-12
1
2014-03-01
RN1901~RN1906
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
RN1901 to 1906
RN1901
RN1902
Emitter cut-off current
RN1903
RN1904
RN1905
RN1906
RN1901
RN1902
DC current gain
RN1903
RN1904
RN1905
RN1906
Collector-emitter
saturation voltage
RN1901 to 1906
RN1901
RN1902
Input voltage (ON)
RN1903
RN1904
RN1905
RN1906
Input voltage (OFF)
Transition frequency
Collector output
capacitance
RN1901 to 1904
RN1905, 1906
RN1901 to 1906
RN1901 to 1906
RN1901
RN1902
Input resistor
RN1903
RN1904
RN1905
RN1906
RN1901 to 1904
Resistor ratio
RN1905
RN1906
R1/R2
R1
V
I (OFF)
f
T
C
ob
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
⎯
⎯
⎯
―
―
V
CE
= 5V, I
C
= 0.1mA
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0,
f = 1MHz
V
CE
= 0.2V, I
C
= 5mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 5V, I
C
= 10mA
V
EB
= 5V, I
C
= 0
V
EB
= 10V, I
C
= 0
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
Min
―
―
0.82
0.38
0.17
0.082
0.078
0.074
30
50
70
80
80
80
―
1.1
1.2
1.3
1.5
0.6
0.7
1.0
0.5
―
―
3.29
7
15.4
32.9
1.54
3.29
0.9
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
0.1
―
―
―
―
―
―
―
―
250
3
4.7
10
22
47
2.2
4.7
1.0
Max
100
500
1.52
0.71
0.33
0.15
0.145
0.138
―
―
―
―
―
―
0.3
2.0
2.4
3.0
5.0
1.1
1.3
1.5
0.8
―
6
6.11
13
28.6
61.1
2.86
6.11
1.1
―
kΩ
V
MHz
pF
V
V
―
mA
Unit
nA
0.0421 0.0468 0.0515
0.09
0.1
0.11
2
2014-03-01
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
