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HN2D03F(TE85L,F)

产品描述DIODE ARRAY GP 400V 100MA SM6
产品类别分立半导体    二极管   
文件大小244KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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HN2D03F(TE85L,F)概述

DIODE ARRAY GP 400V 100MA SM6

HN2D03F(TE85L,F)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown
ECCN代码EAR99
Factory Lead Time12 weeks
最大正向电压 (VF)1.3 V
最高工作温度150 °C
最低工作温度-55 °C
最大功率耗散0.3 W
最大重复峰值反向电压420 V
最大反向电流0.1 µA
反向测试电压400 V
表面贴装YES

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HN2D03F
TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D03F
High-Speed Switching Application
Small package
Low forward voltage
Small total capacitance
: V
F (2)
= 0.94 V (typ.)
: C
T
= 2.5 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
420
400
300*
100*
2*
300**
150
−55
to 150
Unit
V
V
mA
mA
A
mW
°C
°C
1.CATHODE(C1)
2.CATHODE(C2)
3.CATHODE(C3)
4.ANODE (A3)
5.ANODE (A2)
6.ANODE (A1)
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
1-3K1C
temperature, etc.) may cause this product to decrease in the
TOSHIBA
reliability significantly even if the operating conditions (i.e. operating Weight: 15 mg (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Absolute Maximum Ratings per each one of Q1, Q2 or Q3. In case of simultaneous use, the Absolute Maximum
Ratings per diode shall be derated to 75%.
**: Total rating
Electrical Characteristics
(Q1, Q2, Q3, Common, Ta = 25°C)
Characteristic
Forward voltage
Symbol
V
F (1)
V
F (2)
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 10 mA
I
F
= 100 mA
V
R
= 300 V
V
R
= 400 V
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA
(fig.1)
Min
Typ.
0.8
0.94
2.5
0.5
Max
1.3
0.05
0.1
Unit
V
Reverse current
Total capacitance
Reverse recovery time
μA
pF
μs
Start of commercial production
2002-04
1
2014-03-01

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