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HN4A51JTE85LF

产品描述TRANS 2PNP 120V 0.1A SMV
产品类别半导体    分立半导体   
文件大小325KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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HN4A51JTE85LF概述

TRANS 2PNP 120V 0.1A SMV

HN4A51JTE85LF规格参数

参数名称属性值
晶体管类型2 PNP(双)
电流 - 集电极(Ic)(最大值)100mA
电压 - 集射极击穿(最大值)120V
不同 Ib,Ic 时的 Vce 饱和值(最大值)300mV @ 1mA,10mA
电流 - 集电极截止(最大值)100nA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)200 @ 2mA,6V
功率 - 最大值300mW
频率 - 跃迁100MHz
工作温度150°C(TJ)
安装类型表面贴装
封装/外壳SC-74A,SOT-753
供应商器件封装SMV

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HN4A51J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN4A51J
Audio Frequency General Purpose Amplifier Applications
High voltage : V
CEO
=
−120V
High h
FE
: h
FE
= 200 to 700
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1mA)
/ h
FE
(I
C
=
−2mA)
= 0.95 (typ.)
Low noise: NF = 1dB (typ.)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
−120
−120
−5
−100
−20
300
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
1.EMITTER1
2.BASE
3.EMITTER2
4.COLLECTOR2
5.COLLECTOR1
(E1)
(B)
(E2)
(C2)
(C1)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
JEDEC
JEITA
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
Test
Circuit
Test Condition
V
CB
=
−120V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−10mA,
I
B
=
−1mA
V
CE
=
−6V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0, f = 1MHz
V
CE
= −6
V, I
C
= −0.1
mA
f
=
1 kHz, R
G
=
10 kΩ
Min
200
Typ.
100
4
1.0
Max
−0.1
−0.1
700
−0.3
V
MHz
pF
dB
Unit
μA
μA
Marking
Equivalent Circuit
(Top View)
5
4
34
Q1
Q2
Start of commercial production
1
2
3
2000-08
1
2014-03-01

 
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