UNISONIC TECHNOLOGIES CO., LTD
50N06
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC
50N06
is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
TO-220
1
TO-220F
FEATURES
* R
DS(ON)
= 23mΩ@V
GS
= 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
*Pb-free plating product number: 50N06L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
50N06-TA3-T
50N06L-x-TA3-T
50N06-TF3-T
50N06L-x-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
50N06L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating Blank: Pb/Sn
,
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R502-088,A
50N06
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
DSS
V
GSS
MOSFET
RATINGS
UNIT
Drain-Source Voltage
60
V
Gate to Source Voltage
±20
V
T
C
= 25℃
50
A
Continuous Drain Current
I
D
T
C
= 100℃
35
A
Drain Current Pulsed (Note 1)
I
DM
200
A
Single Pulsed Avalanche Energy (Note 2)
E
AS
480
mJ
Repetitive Avalanche Energy (Note 1)
E
AR
13
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
7
V/ns
Total Power Dissipation (T
C
= 25℃)
130
W
P
D
0.9
W/℃
Derating Factor above 25℃
Operation Junction Temperature
T
J
-55 ~ +150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL
θ
JC
θ
CS
θ
JA
MIN
TYP
0.5
62.5
MAX
1.15
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
T
C
= 25℃ unless otherwise specified
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
60
0.07
1
100
-100
2.0
18
900
430
80
40
100
90
80
30
9.6
10
4.0
23
1220
550
100
60
200
180
160
40
TYP
MAX
UNIT
V
V/℃
µA
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0 V, I
D
= 250 µA
I = 250 µA,
△
BV
DSS
/△T
J D
Referenced to 25℃
V
DS
= 60 V, V
GS
= 0 V
I
DSS
V
DS
= 48 V, T
C
= 125℃
V
GS
= 20V, V
DS
= 0 V
I
GSS
V
GS
= -20V, V
DS
= 0 V
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 25 A
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
V
DD
= 30V, I
D
=25 A,
R
G
= 50Ω (Note 4, 5)
V
DS
= 48V, V
GS
= 10 V
I
D
= 50A, (Note 4, 5)
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QW-R502-088,A
50N06
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
V
SD
I
S
= 50A, V
GS
= 0 V
Continuous Source Current
I
S
Integral Reverse p-n Junction Diode in the
MOSFET
D
MOSFET
MIN
TYP
MAX
1.5
50
A
UNIT
V
Pulsed Source Current
I
SM
G
S
200
Reverse Recovery Time
t
RR
I
S
= 50A, V
GS
= 0 V
dI
F
/ dt = 100 A/µs
Reverse Recovery Charge
Q
RR
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=5.6mH, I
AS
=50A, V
DD
=25V, R
G
=0Ω, Starting T
J
=25℃
3. I
SD
≤50A,
di/dt≤300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.
54
81
ns
µC
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QW-R502-088,A
50N06
TEST CIRCUITS AND WAVEFORMS
MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv
/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-088,A
50N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
MOSFET
V
DS
V
GS
R
G
V
DS
90%
10V
Pulse Width
≤
1μs
Duty Factor
≤0.1%
D.U.T.
V
GS
10%
t
D(ON )
t
R
t
D (OFF)
t
F
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50kΩ
12V
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
1mA
V
G
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
R
G
V
DD
D.U.T.
10V
t
p
I
AS
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-088,A
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