4GB (x64, SR) 260-Pin DDR4 SODIMM
Features
DDR4 SDRAM SODIMM
MTA4ATF51264HZ – 4GB
Features
• DDR4 functionality and operations supported as
defined in the component data sheet
• 260-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC4-3200, PC4-2666, or
PC4-2400
• 4GB (512 Meg x 64)
• V
DD
= 1.20V (NOM)
• V
PP
= 2.5V (NOM)
• V
DDSPD
= 2.5V (NOM)
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die V
REFDQ
generation and calibration
• Single-rank
• On-board I
2
C serial presence-detect (SPD) EEPROM
• 8 internal banks; 2 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control command and address bus
Table 1: Key Timing Parameters
Data Rate (MT/s)
CL =
PC4-
3200
2933
2666
2400
24
3200,
2933
–
–
–
22
3200,
2933
2933
–
–
21
2933
2933
–
–
20 \
19
2666 \
2666
2666 \
2666
2666 \
2666
–
18 \
17
2400 \
2400
2400 \
2400
2400 \
2400
2400 \
2400
16 \
15
2133 \
2133
2133 \
2133
2133 \
2133
2133 \
2133
14 \
13
1866 \
1866
1866 \
1866
1866 \
1866
1866 \
1866
12 \
11
1600 \
1600
1600 \
1600
1600 \
1600
1600 \
1600
10 \
9
1333 \
–
t
RCD
t
RP
t
RC
Figure 1: 260-Pin SODIMM (MO-310 R/C C)
Module Height: 30mm (1.181 in)
Options
• Operating temperature
– Commercial (0°C
≤
T
OPER
≤
95°C)
• Package
– 260-pin DIMM (halogen-free)
• Frequency/CAS latency
– 0.62ns @ CL = 22 (DDR4-3200)
– 0.75ns @ CL = 19 (DDR4-2666)
– 0.83ns @ CL = 17 (DDR4-2400)
Marking
None
Z
-3G2
-2G6
-2G3
Speed
Grade
(ns)
13.75
(ns)
13.75
(ns)
45.75
-3G2
-2G9
-2G6
-2G3
1333 \ 14.32
14.32
46.32
1
(13.75)
1
(45.75)
1
–
(13.75)
1333 \ 14.25
14.25
46.25
1
(13.75)
1
(45.75)
1
–
(13.75)
1333 \ 14.16
14.16
46.16
1
(13.75)
1
(45.75)
1
–
(13.75)
CCMTD-1725822587-10265
atf4c512x64hz.pdf – Rev. F 10/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
4GB (x64, SR) 260-Pin DDR4 SODIMM
Features
Table 1: Key Timing Parameters (Continued)
Data Rate (MT/s)
CL =
PC4-
2133
24
–
22
–
21
–
20 \
19
–
18 \
17
–
16 \
15
2133 \
2133
14 \
13
1866 \
1866
12 \
11
1600 \
1600
10 \
9
1333 \
1333
t
RCD
t
RP
t
RC
Speed
Grade
(ns)
14.06
(13.5)
1
(ns)
14.06
(13.5)
1
(ns)
47.06
(46.5)
1
-2G1
Note:
1. Down-bin timing, refer to component data sheet Speed Bin Tables for details.
Table 2: Addressing
Parameter
Row address
Column address
Device bank group address
Device bank address per group
Device configuration
Module rank address
4GB
64K A[15:0]
1K A[9:0]
2 BG0
4 BA[1:0]
8Gb (512 Meg x 16), 8 banks
CS0_n
Table 3: Part Numbers and Timing Parameters – 4GB Modules
Base device: MT40A512M16,
1
8Gb DDR4 SDRAM
Module
2
Part Number
Density
Configuration
MTA4ATF51264HZ-3G2__
MTA4ATF51264HZ-2G6__
MTA4ATF51264HZ-2G3__
Notes:
4GB
4GB
4GB
512 Meg x 64
512 Meg x 64
512 Meg x 64
Module
Bandwidth
25.6 GB/s
21.3 GB/s
19.2 GB/s
Memory Clock/
Data Rate
0.62ns/3200 MT/s
0.75ns/2666 MT/s
0.83ns/2400 MT/s
Clock Cycles
(CL-
t
RCD-
t
RP)
22-22-22
19-19-19
17-17-17
1. The data sheet for the base device can be found on micron.com.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MTA4ATF51264HZ-3G2J1.
CCMTD-1725822587-10265
atf4c512x64hz.pdf – Rev. F 10/18 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
4GB (x64, SR) 260-Pin DDR4 SODIMM
Features
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CCMTD-1725822587-10265
atf4c512x64hz.pdf – Rev. F 10/18 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
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