Transys
Electronics
L I M I T E D
SOT-23 Formed SMD Package
BF821
BF823
SILICON EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BF821 = 1W
BF823 = 1Y
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector–emitter voltage (R
BE
= 2,7 kW )
Collector current (peak value)
Total power dissipation up to T
amb
= 25 °C
Junction temperature
D.C. current gain
–I
C
= 25 mA; –V
CE
= 20 V
Feedback capacitance at f = 1 MHz
· I
C
= 0; –V
CE
= 30 V
Transition frequency at f = 35 MHz
–I
C
= 10 mA; –V
CE
= 10 V
BF821
–V
CB0
max. 300
–V
CE0
max. —
–V
CER
max. 300
–I
CM
max.
P
tot
max.
max.
T
j
h
FE
C
re
f
T
>
<
>
BF823
250 V
250 V
– V
mA
mW
°C
100
250
150
50
1,6
60
pF
MHz
BF821
BF823
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
BF821
BF823
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector–emitter voltage (R
BE
= 2,7 kW )
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Total power dissipation
up to T
amb
= 25 °C
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified
Collector cut–off current
I
E
= 0; –V
CB
= 200V
Collector–emitter voltage
R
BE
= 2,7 kW ; V
CE
= 250 V
R
BE
= 2,7kW ; V
CE
= 200V; T
j
= 150°C
Saturation voltage
–I
C
= 30 mA; –l
B
= 5 mA
D.C. current gain
I
C
= 25 mA; –V
CE
= 20 V
Transition frequency at f = 35 MHz
–I
C
= 10 mA; —V
CE
= 10 V
Feedback capacitance at f = 1 MHz
I
C
= 0; –V
CE
= 30 V
–V
CB0
–V
CE0
–V
CER
–V
EB0
–I
C
–I
CM
P
tot
T
stg
T
j
max. 300
max. —
max. 300
max.
max.
max.
max.
max.
5
50
100
250 V
250 V
— V
V
mA
mA
mW
°C
°C
250
–55 to +150
150
R
th j–a
=
500
KW
/
BF821
–I
CB0
<
10
50
10
0,8
50
60
1,6
BF823
10 nA
50 nA
10
mA
V
–I
CER
<
–I
CER
<
–V
CEsat
<
h
FE
f
T
Cre
>
>
<
MHz
pF
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
