DATA SHEET
5KP
SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE
FEATURES
1.0(25.4)MIN.
5.0 to 220 Volts
PEAK PULSE POWER
5000 Watts
P-600
Unit: inch(mm)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• 5000W Peak Pulse Power capability at on 10/1000µs waveform
• Excellent clamping capability
• Low zener impedance
• Repetition rate(Duty Cycle):.05%
• Fast response time: typically less than 1.0 ps from 0 volts to BV min
.052(1.3)
.048(1.2)
.360(9.1)
• Typical IR less than 1µA above 10V
.340(8.6)
1.0(25.4)MIN.
MECHANICALDATA
Case: JEDEC P-600 molded plastic
Terminals: Axial leads, solderable per MIL-STD-750, Method 2026
Polarity: Color band denoted cathode except Bipolar
Mounting Position: Any
Weight: 0.07 ounce, 2.1 gram
.360(9.1)
.340(8.6)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types 5KP5.0 thru types 5KP220
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
Rati ng
Peak Power D i ssi pati on at T
A
=25
O
C , T P=1ms(Note 1)
Steady State Power di ssi pati on at
T
L
= 7 5
O
C
Lead Lengths .375", (95mm) (Note 2)
Peak Forward Surge C urrent, 8.3ms Si ngle Half Si ne-Wave
Superi mposed on Rated Load (JEC ED Method) (Note 3)
Operati ng Juncti on and Storage Temperature Range
Symbol
P
PK
P
D
I
FSM
T
J
,T
STG
Value
5000
8.0
400
-55 to +175
Uni ts
Watts
Watts
Amps
O
C
NOTES:
1.Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°Cper Fig. 2.
2.Mounted on Copper Leaf area of 0.79in
2
(20mm
2
).
3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
STAD-NOV.11.2003
PAGE . 1
100
PEAK PULSE FORWARD (P
PP
) OR CURRENT (I
PP
)
DERATING IN PERCENTAGE %
OWER, kW
P
PPM
, PEAK P
ULSE P
Non-Rep etitve
Pulse Wa vefom
Shown in Flg ure3
O
TA= 25
C
100
75
10
50
1.0
25
0.1
0.1
1.0
10
100
1000
10000
0
0
25
50
75
100
125
150
175
200
td,PULSE WIDTH,usec
Fig.1 PEAK PULSE POWER RATING VERSUS
PULSE TIME CURVE
T
A
,AMBIENT TEMPERATURE,
O
C
Fig.2 PULSE DERATING CURVE
10
5
I
PPM
,PEAK PULSE CURRENT,%
150
40 ,0 0 0
T 25 C
j=
f= 1.0MHZ
Vsig = 5 0m Vp -p
tf= 10u se c
Pea k Va lue
Ip p m
CJ,CAPACIT
ANCE,p F
T
A
= 25 C
Pulse Wid th (td ) is Define d
a s the Point Where t he Pea k
Current De c a ys to 5 0% of Ip p
20 ,0 0 0
Me a sure d a t
Ze ro Bia s
100
10 ,0 0 0
60 0 0
40 0 0
20 0 0
Me a sure d a t
Sta n d - Off
Vo lta ge (V
RWM
)
Ha lf Va lue -Ip p
2
50
10/1000u se c Wa ve form
a s Defined b ye R.E.A.
10 0 0
500
e-kt
td
200
100
1 .0
0
0
1.0
2.0
3.0
4.0
2 .0
5.0
10
20
5 0 1 00
200
T,TIME,ms
V
RWM
,
Reverse Stand-off Voltage (V)
Fig.4 TYPICAL JUNCTION CAPACITANCE
Fig.3 PULSE WAVEFORM
Pm(AV)STEADY S ATE P
T
OWER DISSIPATION, WATTS
I
FSM
, PEAK FORWARD SURGE CURRENT
AMPERES
8.0
400
350
300
250
200
150
100
1
2
3
5
10
20 30 50
100
Tj= Tj ma x
8.3ms S
INGLE H
ALF sinc e -WAVE
JEDEC M ETHOD
6.0
4.0
= 375"(9.5mm)
2.0
20mm 2 0mm 1 mm
(0.8" 0.8" 0.40")
+ +
+
0
0
+
25
50
75
100
125
150
175
200
T
L
, LEAD TEMPERATURE, C
O
NUMBER OF CYCLES AT 60 Hz
Fig.5 STEADY STATE POWER DERATING CURVE
Fig.6 MAXIMUN NON-REPETITEVE PEAK FORWARD
SURGE CURRENT UNIDIRECTIONAL
STAD-NOV.11.2003
PAGE . 4
NXP MCU
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