Si1404BDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
30
± 12
2.37
1.90
1.90
1.52
b, c
4
1.89
1.1
b, c
2.28
1.45
1.32
b, c
0.94
b, c
- 55 to 150
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 100 °C/W.
Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
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1
t
≤
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
70
44
Maximum
85
55
Unit
°C/W
Si1404BDH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1.9
V
GS
= 2.5 V, I
D
= 1.51
V
DS
= 15 V, I
D
= 1.9
Min.
30
Typ.
Max.
Unit
V
27.3
3
0.6
1.3
± 100
1
10
4
0.190
0.30
2
100
0.238
0.380
mV/°C
V
nA
µA
A
Ω
S
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 1.9 A
V
DS
= 15 V, V
GS
= 2.5 V, I
D
= 1.9 A
f = 1 MHz
V
DD
= 15 V, R
L
= 9.87
Ω
I
D
≅
1.52 A, V
GEN
= 4.5 V, R
g
= 1
Ω
30
20
1.8
1.1
0.4
0.6
1.5
10
30
5
10
2.3
15
45
7.5
15
0.31
4
0.8
55
105
34
16
1.2
85
160
2.7
1.7
pF
nC
Ω
ns
T
C
= 25 °C
I
S
= 1.1 A
A
V
ns
nC
ns
I
F
= 1.1 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
Si1404BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4
V
GS
= 5 V thru 3 V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
3
V
GS
= 2.5 V
2
1.5
2.0
1.0
T
A
= - 55 °C
0.5
T
A
= 25 °C
T
A
= 125 °C
0.0
0.0
V
GS
= 2.0 V
1
V
GS
= 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.6
Transfer Characteristics Curves vs. Temperature
180
R
DS(on)
- On-Resistance (Ω)
0.5
C - Capacitance (pF)
150
120
C
iss
90
0.4
0.3
60
C
oss
30
C
rss
0
5
10
15
20
25
30
0.2
0.1
0
1
2
3
4
5
0
I
D
- Drain Current (A)
V
DS
- Drain-Source Voltage (V)
On-Resistance vs. Drain Current
5
I
D
= 1.90 A
V
GS
- Gate-to-Source Voltage (V)
4
V
DS
= 15 V
3
V
DS
= 24 V
2
R
DS(on)
- On-Resistance
1.7
2.0
Capacitance
V
GS
= 4.5 V, I
D
= 1.90 A
(Normalized)
1.4
1.1
V
GS
= 2.5 V, I
D
= 1.51 A
1
0.8
0
0.0
0.5
1.0
1.5
2.0
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
On-Resistance vs. Junction Temperature
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3
Si1404BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.9
I
D
= 1.9 A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.7
T
J
= 150 °C
1
0.5
T
A
= 125 °C
0.3
T
A
= 25 °C
T
J
= 25 °C
0.1
0.01
0.3
0.1
0.6
0.9
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temp
1.4
1.3
16
1.2
I
D
= 250 µA
V
GS(th)
(V)
Power (W)
1.1
1.0
0.9
0.8
4
0.7
0.6
- 50
12
20
On-Resistance vs. Gate-to-Source Voltage
T
A
= 25 °C
8
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
10
Limited by R
DS(on)
*
1 ms
1
I
D
- Drain Current (A)
10 ms
100 ms
0.1
1s
10 s
0.01
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
DC
Single Pulse Power, Junction-to-Ambient
1000
100
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
>
minimum V
GS
at which R
DS(on)
is specified
1
Safe Operating Area
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Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
Si1404BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.2
0.4
1.0
I
D
- Drain Current (A)
Power Dissipation (W)
0.3
0.8
0.6
0.2
0.4
0.1
0.2
0.0
0
25
50
75
100
125
150
0.0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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