2N4234 – 2N4236
Qualified Levels:
JAN, JANTX and
JANTXV
Available on
commercial
versions
PNP Power Amplifier Silicon Transistor
Qualified per MIL-PRF-19500/580
DESCRIPTION
This family of 2N4234, 2N4235, and 2N4236 silicon transistors are military qualified up to the
JANTXV level for high-reliability applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N4234 and 2N4236 number
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/580
RoHS compliant version available
TO-205AD
(formerly TO-39)
Package
APPLICATIONS / BENEFITS
•
•
•
Short leaded TO-205AD package
Lightweight package
Military and other high-reliability applications
MAXIMUM RATINGS
@ T
A
= +25 °C unless otherwise noted
Parameters / Test Conditions
Junction & Storage Temperature
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
(1)
Total Power Dissipation
Collector – Emitter Voltage
Symbol
T
J
, T
stg
R
ӨJC
R
ӨJA
@ T
A
= 25 ºC
(2)
@ T
C
= 25 ºC
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
(1)
Value
-65 to +200
29
175
1.0
6.0
-40
-60
-80
-40
-60
-80
-7.0
-0.5
-1.0
Unit
°C
ºC/W
ºC/W
W
V
P
T
V
CEO
Collector – Base Voltage
V
CBO
V
EBO
I
B
I
C
V
V
A
A
Emitter - Base Voltage
Base Current
Collector Current
Notes:
1. Derated linearly by 5.7 mW/°C for T
A
> +25 °C
2. Derated linearly by 34 mW/°C for T
C
> +25 °C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0319, Rev. 1 (9/25/13)
©2013 Microsemi Corporation
Page 1 of 5
2N4234 – 2N4236
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Hermetically sealed, steel base, nickel cap
TERMINALS: Steel Leads, nickel plated, then solder dipped or RoHS compliant matte-tin available on commercial grade only
MARKING: Part number, date code, manufacturer’s ID and serial number
POLARITY: PNP
WEIGHT: Approximately 1.064 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial
2N4234
(e3)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
JEDEC type number
Symbol
I
B
I
C
I
E
T
C
V
CB
V
CBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Emitter current: The value of the dc current into the emitter terminal.
Case temperature: The temperature measured at a specified location on the case of a device.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Emitter-base voltage: The dc voltage between the emitter and the base
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
V
CC
V
CE
V
CEO
V
EB
V
EBO
T4-LDS-0319, Rev. 1 (9/25/13)
©2013 Microsemi Corporation
Page 2 of 5
2N4234 – 2N4236
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= -100 mA
Collector-Emitter Cutoff Current
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -60 V
Collector-Emitter Cutoff Current
V
CB
= -40 V, V
BE
= -1.5 V
V
CB
= -60 V, V
BE
= -1.5 V
V
CB
= -80 V, V
BE
= -1.5 V
Collector-Base Cutoff Current
V
CB
= -40 V
V
CB
= -60 V
V
CB
= -80 V
Emitter-Base Cutoff Current
V
BE
= -7.0 V
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= -100 mA, V
CE
= -1.0 V
I
C
= -250 mA, V
CE
= -1.0 V
I
C
= -500 mA, V
CE
= -1.0 V
Collector-Emitter Saturation Voltage
I
C
= -1.0 A, I
B
= -100 mA
I
C
= -500 mA, I
B
= -50 mA
Base-Emitter Saturation Voltage
I
C
= -500 mA, I
B
= -50 mA
I
C
= -1.0 A, I
B
= -100 mA
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= -100 mA, V
CE
= -10 V, f = 1 MHz
Output Capacitance
V
CB
= -10 V, I
E
= 0, f = 100 MHz
(3)
Symbol
Min
Max
Unit
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
V
(BR)CEO
-40
-60
-80
-1.0
-1.0
-1.0
-100
-100
-100
-100
-100
-100
-0.5
V
I
CEO
mA
I
CEX
nA
I
CBO
nA
I
EBO
mA
h
FE
40
30
20
150
V
CE(sat)
-0.6
-0.4
-1.1
-1.5
V
V
BE(sat)
V
|h
FE
|
C
obo
3.0
100
pF
T4-LDS-0319, Rev. 1 (9/25/13)
©2013 Microsemi Corporation
Page 3 of 5
2N4234 – 2N4236
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
SAFE OPERATING AREA
DC Tests
T
C
= +25 °C, 1 cycle, t ≥ 0.5
Test 1
V
CE
= -6.0 V, I
C
= -1.0 A
Test 2
V
CE
= -12 V, I
C
= -500 mA
Test 3
V
CE
= -30 V, I
C
= -166 mA
V
CE
= -50 V, I
C
= -100 mA
V
CE
= -70 V, I
C
= -71 mA
s
(2N4234)
(2N4235)
(2N4236)
(3) Pulse Test: Pulse Width = 300
µs,
duty cycle ≤ 2.0%
T4-LDS-0319, Rev. 1 (9/25/13)
©2013 Microsemi Corporation
Page 4 of 5
2N4234 – 2N4236
PACKAGE DIMENSIONS
Ltr
CD
CH
HD
h
j
k
LD
LL
LC
LU
L1
L2
P
Q
r
α
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.305
0.240
0.335
0.009
0.028
0.029
0.016
0.500
0.016
0.335
0.260
0.370
0.041
0.034
0.045
0.021
0.750
0.019
0.050
7.75
6.10
8.51
0.23
0.71
0.74
0.41
12.7
0.41
8.51
6.60
9.40
1.04
0.86
1.14
0.53
19.05
Notes
3
3, 4
8, 9
7
8, 9
8, 9
8, 9
7
5
10
7
0.200 TP
5.08 TP
0.48
1.27
-
0.250
0.100
-
6.35
2.54
-
-
0.050
-
-
1.27
-
-
0.010
45° TP
-
-
0.25
45° TP
Dimensions are in inches.
Millimeters are given for information only.
Beyond r (radius) maximum, TL shall be held for a minimum length of 0.011 inch (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
All three leads.
The collector shall be internally connected to the case.
Dimension r (radius) applies to both inside corners of tab.
In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
Lead 1 = emitter, lead 2 = base, lead 3 = collector.
T4-LDS-0319, Rev. 1 (9/25/13)
©2013 Microsemi Corporation
Page 5 of 5
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