(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature Range
Symbol
V
RRM
V
RWM
V
R
150
200
I
F(AV)
1.0
2.0
I
FSM
40
T
J
−65 to +175
°C
A
A
Value
Unit
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (T
L
= 25°C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Psi
JL
(Note 2)
R
qJA
Max
24
216
Unit
°C/W
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by R
qJL
) are now referenced as Psi
JL
.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, T
J
= 25°C)
(Rated DC Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
Symbol
v
F
0.875
0.71
i
R
2.0
50
t
rr
35
ns
mA
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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2
MURA115, MURA120, NRVUA120V, SURA8120
TYPICAL CHARACTERISTICS
100
I
R
, REVERSE CURRENT (mA)
T
J
= 175°C
I
R
, REVERSE CURRENT (mA)
100
T
J
= 175°C
10
T
J
= 150°C
10
T
J
= 150°C
1
T
J
= 100°C
0.1
1
T
J
= 100°C
0.1
T
J
= 25°C
0.01
T
J
= 25°C
0.001
0
20
40
60
80
100 120 140 160 180 200
V
R
, REVERSE VOLTAGE (VOLTS)
0.01
0
20
40
60
80
100 120 140 160 180 200
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
Figure 2. Maximum Reverse Current
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
10
1
T
C
= 175°C
1
T
C
= 175°C
0.1
0.1
0.01
0.3
150°C 100°C
0.4
0.5
25°C
0.6
0.7
−65°C
0.8
0.9
1.0
1.1
0.01
0.3
150°C 100°C
0.4
0.5
0.6
25°C
0.7
−65°C
0.8
0.9
1
1.1
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
Figure 4. Maximum Forward Voltage
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3
MURA115, MURA120, NRVUA120V, SURA8120
TYPICAL CHARACTERISTICS
50
45
C, CAPACITANCE (pF)
40
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
50
45
C, CAPACITANCE (pF)
40
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 47 pF
Figure 5. Typical Capacitance
Figure 6. Maximum Capacitance
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
5
1.5
1.25
dc
1
0.75 SQUARE WAVE
0.5
0.25
0
0
20
40
60
80
100
120
140
160
180
T
A
, AMBIENT TEMPERATURE (°C)
4
dc
3
SQUARE WAVE
2
1
0
80 90
100 110 120 130 140 150 160 170 180
T
L
, LEAD TEMPERATURE (°C)
Figure 7. Current Derating, Lead
Figure 8. Current Derating, Ambient
(FR−4 Board with Minimum Pad)
P
F
, AVERAGE POWER DISSIPATION (W)
3
2.5
dc
2
SQUARE WAVE
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Power Dissipation
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4
MURA115, MURA120, NRVUA120V, SURA8120
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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ON Semiconductor reserves the right to make changes without further notice to any products herein.
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卡巴斯基的安全研究人员称其发现了如何攻击Intel微处理器的远程攻击代码，据传，这一代码可以通过TCP/IP包和JavaScript代码到达用户系统。 目前受影响的系统包括Windows XP，Vista，Windows Server 2003，Windows Server 2008，Linux甚至是BSD和Mac。但所幸大多数错误可以由Intel和BIOS厂商联合进行修复。 卡...[详细]
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