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SMMBFJ175LT1G

产品描述TRANS JFET P-CH 30V SOT23
产品类别分立半导体    晶体管   
文件大小103KB,共2页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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SMMBFJ175LT1G概述

TRANS JFET P-CH 30V SOT23

SMMBFJ175LT1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
包装说明SOT-23, 3 PIN
制造商包装代码318-08
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time40 weeks
配置SINGLE
最大漏极电流 (ID)0.06 A
最大漏源导通电阻125 Ω
FET 技术JUNCTION
最大反馈电容 (Crss)5.5 pF
JEDEC-95代码TO-236
JESD-30 代码R-PDSO-G3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
工作模式DEPLETION MODE
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型P-CHANNEL
功耗环境最大值0.225 W
最大功率耗散 (Abs)0.225 W
参考标准AEC-Q101
表面贴装YES
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
晶体管元件材料SILICON

文档预览

下载PDF文档
MMBFJ175LT1G
JFET Chopper
P−Channel
Depletion
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Drain−Gate Voltage
Reverse Gate−Source Voltage
Symbol
V
DG
V
GS(r)
Value
25
−25
Unit
V
V
www.onsemi.com
2 SOURCE
3
GATE
1 DRAIN
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
−55
to +150
Unit
mW
mW/°C
°C/W
°C
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 10
R
qJA
T
J
, T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate
−Source
Breakdown Voltage
(V
DS
= 0, I
D
= 1.0
mA)
Gate Reverse Current
(V
DS
= 0 V, V
GS
= 20 V)
Gate
−Source
Cutoff Voltage
(V
DS
= 15, I
D
= 10 nA)
ON CHARACTERISTICS
Zero Gate−Voltage Drain Current (Note 2)
(V
GS
= 0, V
DS
= 15 V)
Drain Cutoff Current
(V
DS
= 15 V, V
GS
= 10 V)
Drain Source On Resistance
(I
D
= 500
mA)
Input Capacitance
Reverse Transfer
Capacitance
V
DS
= 0, V
GS
= 10V
f = 1.0 MHz
I
DSS
I
D(off)
r
DS(on)
C
iss
C
rss
7.0
60
1.0
125
11
5.5
pF
mA
nA
W
SMMBFJ175LT1G
V
(BR)GSS
I
GSS
V
GS(OFF)
30
3.0
1.0
6.0
V
nA
V
Symbol
Min
Max
Unit
1
6W M
G
G
6W = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBFJ175LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3000 / Tape &
Reel
3000 / Tape &
Reel
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
October, 2016
Rev. 7
1
Publication Order Number:
MMBFJ175LT1/D

SMMBFJ175LT1G相似产品对比

SMMBFJ175LT1G MMBFJ175LT1_06 MMBFJ175LT1G
描述 TRANS JFET P-CH 30V SOT23 P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
元件数量 1 1 1
端子数量 3 3 3
表面贴装 YES Yes YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
晶体管元件材料 SILICON SILICON SILICON
Brand Name ON Semiconductor - ON Semiconductor
是否无铅 不含铅 - 不含铅
厂商名称 ON Semiconductor(安森美) - ON Semiconductor(安森美)
包装说明 SOT-23, 3 PIN - SMALL OUTLINE, R-PDSO-G3
制造商包装代码 318-08 - 318-08
Reach Compliance Code compliant - compliant
ECCN代码 EAR99 - EAR99
Factory Lead Time 40 weeks - 1 week
配置 SINGLE - SINGLE
最大漏极电流 (ID) 0.06 A - 0.06 A
最大漏源导通电阻 125 Ω - 125 Ω
FET 技术 JUNCTION - JUNCTION
最大反馈电容 (Crss) 5.5 pF - 5.5 pF
JEDEC-95代码 TO-236 - TO-236
JESD-30 代码 R-PDSO-G3 - R-PDSO-G3
JESD-609代码 e3 - e3
湿度敏感等级 1 - 1
工作模式 DEPLETION MODE - DEPLETION MODE
最高工作温度 150 °C - 150 °C
最低工作温度 -55 °C - -55 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE
极性/信道类型 P-CHANNEL - P-CHANNEL
功耗环境最大值 0.225 W - 0.225 W
最大功率耗散 (Abs) 0.225 W - 0.225 W
端子面层 Tin (Sn) - Tin (Sn)

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