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JANTXV1N5554

产品描述DIODE GEN PURP 1KV 5A AXIAL
产品类别分立半导体    二极管   
文件大小193KB,共6页
制造商Microsemi
官网地址https://www.microsemi.com
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JANTXV1N5554概述

DIODE GEN PURP 1KV 5A AXIAL

JANTXV1N5554规格参数

参数名称属性值
是否Rohs认证不符合
包装说明O-XALF-W2
针数2
制造商包装代码E PACKAGE
Reach Compliance Codecompliant
应用POWER
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-XALF-W2
JESD-609代码e0
最大非重复峰值正向电流100 A
元件数量1
相数1
端子数量2
最大输出电流5 A
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Qualified
参考标准MIL-19500/420G
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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1N5550 thru 1N5554
VOIDLESS HERMETICALLY SEALED STANDARD
RECOVERY GLASS RECTIFIERS
Qualified to MIL-PRF-19500/420
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated
rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed
with voidless-glass construction using an internal “Category
1”
metallurgical bond. These
devices are also available in surface mount MELF package configurations. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both through-
hole and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
FEATURES
JEDEC registered 1N5550 thru 1N5554 series.
Voidless hermetically sealed glass package.
Extremely robust construction.
Quadruple-layer passivation.
Internal “Category
1”
metallurgical bonds.
JAN, JANTX, JANTXV and JANS qualified versions available per MIL-PRF-19500/420.
RoHS compliant versions available (commercial grade only).
“B” Package
Also available in:
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5550US – 1N5554US
APPLICATIONS / BENEFITS
Standard recovery 5 amp 200 to 1000 volts rectifier series.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Extremely robust construction.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@
T
A
= 25
o
C
unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Thermal Impedance @ 10 ms heating time
Maximum Forward Surge Current (8.3 ms half sine)
(1)
o
Average Rectified Forward Current
@ T
L
= 30 C
(3)
o
Average Rectified Forward Current
@ T
A
= 55 C
o
@ T
A
= 100 C
Working Peak Reverse Voltage
1N5550
1N5551
1N5552
1N5553
1N5554
Solder Temperature @ 10 s
See notes on next page.
Symbol
T
J
and T
STG
R
ӨJL
Z
ӨJX
I
FSM
I
O(L)
(2)
I
O2
(4)
I
O3
V
RWM
Value
-65 to +175
22
1.5
100
5
3
2
200
400
600
800
1000
260
Unit
C
C/W
o
C/W
A
A
A
A
V
o
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T
SP
o
C
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 1 of 6

JANTXV1N5554相似产品对比

JANTXV1N5554 M55342M01B223APBS MX1N5551
描述 DIODE GEN PURP 1KV 5A AXIAL RESISTOR, THIN FILM, 0.05 W, 0.1 %, 300 ppm, 223 ohm, SURFACE MOUNT, 0502, CHIP Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2
是否Rohs认证 不符合 不符合 不符合
包装说明 O-XALF-W2 SMT, 0502 O-LALF-W2
Reach Compliance Code compliant unknown compliant
端子数量 2 2 2
封装形式 LONG FORM SMT LONG FORM
参考标准 MIL-19500/420G MIL-PRF-55342 MIL-19500
表面贴装 NO YES NO
端子面层 Tin/Lead (Sn/Pb) TIN LEAD OVER NICKEL Tin/Lead (Sn/Pb)
应用 POWER - GENERAL PURPOSE
外壳连接 ISOLATED - ISOLATED
配置 SINGLE - SINGLE
二极管元件材料 SILICON - SILICON
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE
JESD-30 代码 O-XALF-W2 - O-LALF-W2
JESD-609代码 e0 - e0
最大非重复峰值正向电流 100 A - 100 A
元件数量 1 - 1
相数 1 - 1
最大输出电流 5 A - 3 A
封装主体材料 UNSPECIFIED - GLASS
封装形状 ROUND - ROUND
端子形式 WIRE - WIRE
端子位置 AXIAL - AXIAL
ECCN代码 - EAR99 EAR99
其他特性 - NON-INDUCTIVE HIGH RELIABILITY
最高工作温度 - 150 °C 175 °C
最低工作温度 - -65 °C -65 °C
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